Биполярный транзистор 2SC4804 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4804
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-база (Ucb): 900 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 600 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: ITO220
2SC4804 Datasheet (PDF)
2sc4804.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4804 DESCRIPTION With ITO-220 package High breakdown voltage APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta
2sc4804.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4804 DESCRIPTION With ITO-220 package High breakdown voltage APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute m
2sc4809 e.pdf
Transistor2SC4809Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.1Small collector output capacitance Cob and common base reversetransfer capacitance Crb.3SS-Mini type package, allowing downsizing of the equipment2and automatic insertion through the tape packi
2sc4805 e.pdf
Transistor2SC4805Silicon NPN epitaxial planer typeFor 2GHz band low-noise amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit0.
2sc4805.pdf
Transistor2SC4805Silicon NPN epitaxial planer typeFor 2GHz band low-noise amplificationUnit: mm2.1 0.10.425 1.25 0.1 0.425FeaturesHigh transition frequency fT. 1S-Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine3packing.2Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings Unit0.
2sc4808 e.pdf
Transistor2SC4808Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesLow noise figure NF.1High gain.3High transition frequency fT.SSMini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing.0.2 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Rat
2sc4809.pdf
Transistor2SC4809Silicon NPN epitaxial planer typeFor high-frequency amplification/oscillation/mixingUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesHigh transition frequency fT.1Small collector output capacitance Cob and common base reversetransfer capacitance Crb.3SS-Mini type package, allowing downsizing of the equipment2and automatic insertion through the tape packi
2sc4808.pdf
Transistor2SC4808Silicon NPN epitaxial planer typeFor UHF band low-noise amplificationUnit: mm1.6 0.150.4 0.8 0.1 0.4FeaturesLow noise figure NF.1High gain.3High transition frequency fT.SSMini type package, allowing downsizing of the equipment and2automatic insertion through the tape packing.0.2 0.1Absolute Maximum Ratings (Ta=25C)Parameter Symbol Rat
2sc4807.pdf
2SC4807Silicon NPN EpitaxialApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 4.4 GHz Typ High output power1 dB Power compression point Pcp = 24 dBm Typ at VCE = 5V , IC = 100 mA , f = 900 MHzOutlineUPAK12341. Base2. Collector3. Emitter4. Collector (Flange)2SC4807Absolute Maximum Ratings (Ta = 25C)Item Symbol Rati
2sc4807.pdf
SMD Type TransistorsNPN Transistors2SC4807SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=15V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collector - Emitter Voltage VCEO 15 V Emitter - Base Voltage VE
2sc4807.pdf
INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4807DESCRIPTIONHigh Gain-Bandwidth Productf = 4.4 GHz TYP.THigh Output Power1 dB Power compression point P = 24 dBm TYP.cp@ V = 5V , I = 100 mA , f = 900 MHzCE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for VHF ~ UHF wide
2sc4806.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC4806DESCRIPTIONHigh Breakdown Voltage-: V = 1700V(Min)CBOHigh Switching SpeedLow Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display.High speed switching power su
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Список транзисторов
Обновления
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