Биполярный транзистор 2SC4941 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC4941
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 65 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 800 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 6 A
Граничная частота коэффициента передачи тока (ft): 8 MHz
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO3PML
2SC4941 Datasheet (PDF)
2sc4941.pdf
Product Specification www.jmnic.com Silicon Power Transistors 2SC4941 DESCRIPTION With TO-3PML package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 Collector3 EmitterFig.1 simplified outline (TO-3PML) and symbolAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emit
2sc4941.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC4941DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 800V(Min)CEO(SUS)Fast Switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV horizontal deflection output applicationsColor display horizontal deflection output
2sc4944.pdf
2SC4944 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC4944 Audio Frequency General Purpose Amplefier Applications Unit: mm Small package (dual type) High voltage and high current: VCEO = 50 V, IC = 150 mA (max) High hFE: hFE = 120~400 Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) Complementary to 2SA1873 Absolut
2sc4942.pdf
DATA SHEETSILICON TRANSISTORS2SC4942NPN SILICON TRIPLE DIFFUSED TRANSISTORFOR HIGH-SPEED HIGH-VOLTAGE SWITCHINGThe 2SC4942 is a transistor developed for high-speed high- PACKAGE DRAWING (UNIT: mm)voltage switching. This transistor is ideal for use in switchingdevices such as switching regulators and DC/DC converters.FEATURES New package with dimensions in between those of s
2sc4940.pdf
JMnic Product Specification Silicon NPN Power Transistors 2SC4940 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter
2sc4944.pdf
2SC4944 DUAL TRANSISTOR (NPN+ NPN) SOT-353 Features Small package (dual type) High voltage and high current High hFE, excellent hFE linearity 1 Complementary to 2SA1873 Marking: LY LGR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO 60 VCollector-Base Voltage VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5
2sc4942.pdf
SMD Type TransistorsNPN Transistors2SC49421.70 0.1 Features High voltage Fast switching speed0.42 0.10.46 0.1 Complementary transistor with the 2SA18711.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 600 Collector - Emitter Voltage VCEO 600 V Emitter - Base Voltage VEBO 7
2sc4940.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC4940 DESCRIPTION With ITO-220 package Switching power transistor PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter 1200 V VCEO
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050