JMnic Product Specification Silicon NPN Power Transistors 2SC4980 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC4980DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Collector Current-I = 5A(Max.)CLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in drivers such as DC/DC convert

Ordering number:ENN4633APNP/NPN Epitaxial Planar Silicon Transistors2SA1882/2SC4984Low-FrequencyGeneral-Purpose Amplifier ApplicationsApplcations Package Dimensions Low-frequency power amplifier applications.unit:mm Medium-speed switching.2038A Small-sized motor drivers.[2SA1882/2SC4984]4.51.51.6Features Large current capacity. Low collector-to-e

Ordering number:EN4723NPN Epitaxial Planar Silicon Transistor2SC4987High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm Low collector saturation voltage.2106A High gain-bandwidth product.[2SC4987] Small collector capacitance. 0.750.30.6 Very small-sized package permitting 2SC4987-applied sets to be made small and

Ordering number:4661PNP/NPN Epitaxial Planar Silicon Transistor2SA1881/2SC4983Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions AF power amplifier, medium-speed switching, small-unit:mmsized motor drivers and LED drivers.2018B[2SA1881/2SC4983]Features Large current capacity. Low collector-to-emitter saturation voltage. Very sm

Power Transistors2SC4985Silicon NPN triple diffusion planar typeFor high breakdown voltage high-speed switchingUnit: mm7.5 0.2 4.5 0.2Features90High collector to base voltage VCBO0.65 0.1 0.85 0.1High collector to emitter VCEOAllowing automatic insertion with radial taping1.0 0.10.8C 0.8C0.7 0.1 0.7 0.1Absolute Maximum Ratings (Ta=25C)Parameter

2SC4988Silicon NPN EpitaxialADE-208-0041st. EditionApplicationVHF / UHF wide band amplifierFeatures High gain bandwidth productfT = 8.5 GHz Typ High gain, low noise figurePG = 10.5 dB Typ, NF = 1.3 dB Typ at f = 900 MHzOutlineUPAK1234 1. Base2. Collector3. Emitter4. Collector (Flange)2SC4988Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratin

JMnic Product Specification Silicon NPN Power Transistors 2SC4982 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em

JMnic Product Specification Silicon NPN Power Transistors 2SC4981 DESCRIPTION With ITO-220 package Switching power transistor Low collector saturation voltage PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (ITO-220) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open em

SMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type TransistorsSMD Type TransistorsSMD Type TransistorsProduct specification2SC4984FeaturesLarge current capacity.Low collector-to-emitter saturation voltage.Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO 15 VCollector-emitter voltage VCEO 15 VEmitter

SMD Type TransistorsNPN Transistors2SC4984SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=1.5A Collector Emitter Voltage VCEO=15V Complementary to 2SA18820.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 1

SMD Type TransistorsNPN Transistors2SC4983SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=1A Collector Emitter Voltage VCEO=15V1 2+0.1+0.050.95 -0.1 0.1 -0.01 Complement to 2SA1881+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Ba

SMD Type TransistorsNPN Transistors2SC4988SOT-89Unit:mm1.70 0.1 Features Collector Current Capability IC=0.1A Collector Emitter Voltage VCEO=9V0.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 15 Collector - Emitter Voltage VCEO 9 V Emitter - Base Voltage VEBO

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC4988DESCRIPTIONHigh Gain Bandwidth Productf = 8.5 GHz TYP.THigh Gain, Low Noise FigurePG = 10.5 dB TYP. , NF = 1.3 dB TYP. @ f = 900 MHz100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in VHF ~ UHF wide band amplifier.ABSOLU

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC4982DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Collector Current-I = 10A(Max.)CLow Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in drivers such as DC/DC conver

INCHANGE Semiconductorisc Silicon NPN Power Transistors 2SC4981DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Low Collector Saturation Voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in drivers such as DC/DC convertersand actuators.ABSOLUTE MAXIMUM