Power Transistors2SC5895Silicon NPN epitaxial planar typeUnit: mm4.60.2Power supply for Audio & Visual equipments9.90.32.90.2such as TVs and VCRsIndustrial equipments such as DC-DC converters 3.20.1 Features High-speed switching (tstg: storage time/tf: fall time is short)1.40.2 Low collector-emitter saturation voltage VCE(sat)2.60.11.60.2

JMnic Product Specification Silicon NPN Power Transistors 2SC5895 DESCRIPTION With TO-220F package High speed switching Low collector saturation voltage APPLICATIONS Power supply for audio and visual equipments such as TVs and VCRs Industrial equipments such as DC-DC converters PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) an

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SC5895DESCRIPTIONHigh Breakdown VoltageWide Area of Safe Operation100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supply for audio & visual equipments such asTVS and VCRSIndustrial equipments such as DC-DC convertersABSOLUTE MAXIMUM

Ordering number : ENN75382SC5899NPN Triple Diffused Planar Silicon Transistor2SC5899Ultrahigh-Definition CRT DisplayHorizontal Deflection Output ApplicationsFeaturesPackage Dimensions High speed.unit : mm High breakdown voltage(VCBO=1700V).2174A High reliability(Adoption of HVP process).[2SC5899] Adoption of MBIT process.5.63.416.03.12.82.0 2.

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

To all our customersRegarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

Power Transistors2SC5896Silicon NPN epitaxial planar typeUnit: mm4.60.2Power supply for Audio & Visual equipments9.90.32.90.2such as TVs and VCRsIndustrial equipments such as DC-DC converters 3.20.1 Features High-speed switching (tstg: storage time/tf: fall time is short)1.40.2 Low collector-emitter saturation voltage VCE(sat)2.60.11.60.2

INCHANGE Semiconductorisc Silicon NPN RF Transistor 2SC5890DESCRIPTIONHigh Gain Bandwidth Productf = 7.8 GHz TYP.THigh power gain and low noise figure ;PG = 12 dB TYP., NF = 1.0 dB typ. @ f = 900 MHz100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in UHF ~ VHF wide band amplifier.