2SD2333 datasheet, аналоги, основные параметры

Наименование производителя: 2SD2333  📄📄 

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 80 W

Макcимально допустимое напряжение коллектор-база (Ucb): 1500 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 600 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V

Макcимальный постоянный ток коллектора (Ic): 5 A

Электрические характеристики

Статический коэффициент передачи тока (hFE): 8

Корпус транзистора: TO3PML

 Аналоги (замена) для 2SD2333

- подборⓘ биполярного транзистора по параметрам

 

2SD2333 даташит

 ..1. Size:189K  inchange semiconductor
 2sd2333.pdf pdf_icon

2SD2333

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2333 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 8.1. Size:41K  hitachi
 2sd2337.pdf pdf_icon

2SD2333

To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog and discrete devices, and memory chips other than DRAM

 8.2. Size:189K  inchange semiconductor
 2sd2335.pdf pdf_icon

2SD2333

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2335 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

 8.3. Size:189K  inchange semiconductor
 2sd2331.pdf pdf_icon

2SD2333

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD2331 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal output applicaitions ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: 2SD1563A, 2SD1772A, 2SD1975A, 2SD1985A, 2SD2196, 2SD2222, 2SD2251, 2SD2331, 2SC828, 2SD2335, 2SD2340, 2SD2374, 2SD2374A, 2SD2394, 2SD2395, 2SD2399, 2SD2400