2N5885 - описание и поиск аналогов

Order this document MOTOROLA by 2N5883/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5883 Complementary Silicon High-Power Transistors 2N5884* NPN . . . designed for general purpose power amplifier and switching applications. Low Collector Emitter Saturation Voltage 2N5885 VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current 2N5886* ICEX = 1.0 mAdc (max) at Rated

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824 www.centralsemi.com

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High-Power Transistors Complementary silicon high-power transistors are designed for general-purpose power amplifier and switching applications. http //onsemi.com Features 25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - SILICON POWER TRANSISTORS VCE(sat) = 1

A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5885 2N5886 DESCRIPTION With TO-3 package Complement to type 2N5883 2N5884 APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PAR

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5885/5886 DESCRIPTION DC Current Gain- hFE= 20(Min)@IC= 10A Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC= 15A Complement to Type 2N5883/5884 APPLICATIONS Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL P

isc Silicon NPN Power Transistors 2N5885 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 15A CE(sat) C DC Current Gain- h = 20- @I = 10A FE C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM R

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5885/5886 DESCRIPTION DC Current Gain- hFE= 20(Min)@IC= 10A Low Saturation Voltage- VCE(sat)= 1.0V(Max)@ IC= 15A Complement to Type 2N5883/5884 APPLICATIONS Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL P

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High-Power Transistors Complementary silicon high-power transistors are designed for general-purpose power amplifier and switching applications. Features 25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - SILICON POWER TRANSISTORS VCE(sat) = 1.0 Vdc, (max) at IC

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High-Power Transistors Complementary silicon high-power transistors are designed for general-purpose power amplifier and switching applications. Features 25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - SILICON POWER TRANSISTORS VCE(sat) = 1.0 Vdc, (max) at IC

Order this document MOTOROLA by 2N5879/D SEMICONDUCTOR TECHNICAL DATA PNP 2N5879 Complementary Silicon 2N5880* High-Power Transistors NPN . . . designed for general purpose power amplifier and switching applications. 2N5881 Collector Emitter Sustaining Voltage VCEO(sus) = 60 Vdc (Min) 2N5879, 2N5881 VCEO(sus) = 80 Vdc (Min) 2N5880, 2N5882 * 2N5882 DC Cur

2N5886 HIGH CURRENT SILICON NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH CURRENT CAPABILITY APPLICATIONS GENERAL PURPOSE SWITCHING AND AMPLIFIER LINEAR AND SWITCHING INDUSTRIAL 1 EQUIPMENT 2 DESCRIPTION The 2N5886 is a silicon Epitaxial-Base NPN TO-3 power transistor mounted in Jedec TO-3 metal case. It is inteded for use in power linear amplif

145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High-Power Transistors Complementary silicon high-power transistors are designed for general-purpose power amplifier and switching applications. Features 25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - SILICON POWER TRANSISTORS VCE(sat) = 1.0 Vdc, (max) at IC

2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN) 2N5884 and 2N5886 are Preferred Devices Complementary Silicon High-Power Transistors Complementary silicon high-power transistors are designed for general-purpose power amplifier and switching applications. Features 25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage - SILICON POWER TRANSISTORS VCE(sat) = 1.0 Vdc, (max) at IC

A Boca Semiconductor Corp. BSC http //www.bocasemi.com A A Boca Semiconductor Corp. BSC http //www.bocasemi.com A Boca Semiconductor Corp. BSC http //www.bocasemi.com

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5881 2N5882 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage Complement to type 2N5879 2N5880 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolu

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5883 2N5884 DESCRIPTION With TO-3 package Complement to type 2N5885 2N5886 APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta= ) SYMBOL PAR

SPTECH Product Specification SPTECH Silicon NPN Power Transistors 2N5886 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V(Max.)@ I = 15A CE(sat) C DC Current Gain- h = 20- @I = 10A FE C APPLICATIONS Designed for general-purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 80 V

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5881 2N5882 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5879 2N5880 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absol

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5883 2N5884 DESCRIPTION With TO-3 package Complement to type 2N5885 2N5886 High power dissipations APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute

isc Silicon PNP Power Transistor 2N5884 DESCRIPTION Collector-Emitter Breakdown Voltage- V =-80V(Min) (BR)CEO Minimum Lot-to-Lot variations for robust device Performance and reliable operation APPLICATIONS Power amplifier and switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) UNI SYMBOL PARAMETER VALUE T V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltag

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5879 2N5880 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5881 2N5882 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolu