Биполярный транзистор 2N5886 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N5886
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 200 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 25 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 4 MHz
Ёмкость коллекторного перехода (Cc): 600 pf
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO3
2N5886 Datasheet (PDF)
2n5883 2n5884 2n5885 2n5886.pdf
Order this documentMOTOROLAby 2N5883/DSEMICONDUCTOR TECHNICAL DATAPNP2N5883Complementary SiliconHigh-Power Transistors2N5884*NPN. . . designed for generalpurpose power amplifier and switching applications. Low CollectorEmitter Saturation Voltage 2N5885VCE(sat) = 1.0 Vdc, (max) at IC = 15 Adc Low Leakage Current2N5886*ICEX = 1.0 mAdc (max) at Rated
2n5886.pdf
2N5886HIGH CURRENT SILICON NPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE HIGH CURRENT CAPABILITY APPLICATIONS GENERAL PURPOSE SWITCHING ANDAMPLIFIER LINEAR AND SWITCHING INDUSTRIAL1EQUIPMENT 2DESCRIPTION The 2N5886 is a silicon Epitaxial-Base NPNTO-3power transistor mounted in Jedec TO-3 metalcase. It is inteded for use in power linearamplif
2n5883 2n5884 2n5885 2n5886 2.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
2n5883 2n5884 2n5885 2n5886.pdf
2N5883, 2N5884 (PNP)2N5885, 2N5886 (NPN)2N5884 and 2N5886 are Preferred DevicesComplementary SiliconHigh-Power TransistorsComplementary silicon high-power transistors are designed forgeneral-purpose power amplifier and switching applications.http://onsemi.comFeatures25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage -SILICON POWER TRANSISTORSVCE(sat) = 1
2n5883 2n5884 2n5885 2n5886.pdf
ABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.com
2n5885 2n5886.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5885 2N5886 DESCRIPTION With TO-3 package Complement to type 2N5883 2N5884 APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PAR
2n5886.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistors 2N5886DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 15ACE(sat) CDC Current Gain-: h = 20- @I = 10AFE CAPPLICATIONSDesigned for general-purpose power amplifier and switchingapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 80 V
2n5885 2n5886.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5885/5886 DESCRIPTION DC Current Gain- : hFE= 20(Min)@IC= 10A Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A Complement to Type 2N5883/5884 APPLICATIONS Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL P
2n5886g.pdf
2N5883, 2N5884 (PNP)2N5885, 2N5886 (NPN)2N5884 and 2N5886 are Preferred DevicesComplementary SiliconHigh-Power TransistorsComplementary silicon high-power transistors are designed forgeneral-purpose power amplifier and switching applications.Features25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage -SILICON POWER TRANSISTORSVCE(sat) = 1.0 Vdc, (max) at IC
2n5884g 2n5884g 2n5886g.pdf
2N5883, 2N5884 (PNP)2N5885, 2N5886 (NPN)2N5884 and 2N5886 are Preferred DevicesComplementary SiliconHigh-Power TransistorsComplementary silicon high-power transistors are designed forgeneral-purpose power amplifier and switching applications.Features25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage -SILICON POWER TRANSISTORSVCE(sat) = 1.0 Vdc, (max) at IC
2n5879 2n5880 2n5881 2n5882.pdf
Order this documentMOTOROLAby 2N5879/DSEMICONDUCTOR TECHNICAL DATAPNP2N5879Complementary Silicon2N5880*High-Power TransistorsNPN. . . designed for generalpurpose power amplifier and switching applications.2N5881 CollectorEmitter Sustaining Voltage VCEO(sus) = 60 Vdc (Min) 2N5879, 2N5881VCEO(sus) = 80 Vdc (Min) 2N5880, 2N5882*2N5882 DC Cur
2n5879 2n5880 2n5881 2n5882.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n5885g.pdf
2N5883, 2N5884 (PNP)2N5885, 2N5886 (NPN)2N5884 and 2N5886 are Preferred DevicesComplementary SiliconHigh-Power TransistorsComplementary silicon high-power transistors are designed forgeneral-purpose power amplifier and switching applications.Features25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage -SILICON POWER TRANSISTORSVCE(sat) = 1.0 Vdc, (max) at IC
2n5883g 2n5883g 2n5885g.pdf
2N5883, 2N5884 (PNP)2N5885, 2N5886 (NPN)2N5884 and 2N5886 are Preferred DevicesComplementary SiliconHigh-Power TransistorsComplementary silicon high-power transistors are designed forgeneral-purpose power amplifier and switching applications.Features25 AMPERE COMPLEMENTARY Low Collector-Emitter Saturation Voltage -SILICON POWER TRANSISTORSVCE(sat) = 1.0 Vdc, (max) at IC
2n5879 2n5880 2n5881 2n5882.pdf
ABoca Semiconductor Corp. BSC http://www.bocasemi.comAABoca Semiconductor Corp. BSC http://www.bocasemi.comABoca Semiconductor Corp. BSC http://www.bocasemi.com
2n5881 2n5882.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5881 2N5882 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage Complement to type 2N5879 2N5880 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolu
2n5883 2n5884.pdf
Product Specification www.jmnic.com Silicon PNP Power Transistors 2N5883 2N5884 DESCRIPTION With TO-3 package Complement to type 2N5885 2N5886 APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL PAR
2n5885 5886.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors 2N5885/5886 DESCRIPTION DC Current Gain- : hFE= 20(Min)@IC= 10A Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 15A Complement to Type 2N5883/5884 APPLICATIONS Designed for general purpose power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL P
2n5881 2n5882.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5881 2N5882 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5879 2N5880 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsol
2n5883 2n5884.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5883 2N5884 DESCRIPTION With TO-3 package Complement to type 2N5885 2N5886 High power dissipations APPLICATIONS They are intended for use in power linear and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolute
2n5884.pdf
isc Silicon PNP Power Transistor 2N5884DESCRIPTIONCollector-Emitter Breakdown Voltage-: V =-80V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust devicePerformance and reliable operationAPPLICATIONSPower amplifier and switching applicationsABSOLUTE MAXIMUM RATINGS(Ta=25)UNISYMBOL PARAMETER VALUETV Collector-Base Voltage -80 VCBOV Collector-Emitter Voltag
2n5879 2n5880.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N5879 2N5880 DESCRIPTION With TO-3 package Low collector saturation voltage Complement to type 2N5881 2N5882 APPLICATIONS For general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol3 CollectorAbsolu
2n5885.pdf
isc Silicon NPN Power Transistors 2N5885DESCRIPTIONLow Collector Saturation Voltage-: V = 1.0V(Max.)@ I = 15ACE(sat) CDC Current Gain-: h = 20- @I = 10AFE C100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for general-purpose power amplifier and switchingapplications.ABSOLUTE MAXIMUM R
Другие транзисторы... 2N5878 , 2N5879 , 2N5880 , 2N5881 , 2N5882 , 2N5883 , 2N5884 , 2N5885 , 2SD1555 , 2N5887 , 2N5888 , 2N5889 , 2N588A , 2N589 , 2N5890 , 2N5891 , 2N5892 .
