2SD2553 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2553 HORIZONTAL DEFLECTION OUTPUT FOR HIGH Unit: mm RESOLUTION DISPLAY, COLOR TV HIGH SPEED SWITCHING APPLICATIONS High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 5 V (Max.) CE (sat) High Speed : t = 0.3 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mol

isc Silicon NPN Power Transistor 2SD2553DESCRIPTIONHigh Breakdown Voltage-: V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHorizontal deflection output for high resolution display,color TV applicationsHigh speed switching applicat

2SD2551 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2551 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 5.0 V (Max.) CE (sat) High Speed : t = 1.0 s (Max.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMBO

2SD2550 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2550 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit: mm High Voltage : VCBO = 1700 V Low Saturation Voltage : V = 5.0 V (Max.) CE (sat) High Speed : t = 0.6 s (Max.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25C) CHARACTERISTIC SYMB

2SD2559 TOSHIBA Transistor Silicon NPN Triple Diffused Mesa Type 2SD2559 Horizontal Deflection Output for Color TV Unit: mm High voltage: VCBO = 1500 V Low saturation voltage: V = 5 V (max) CE (sat) Bult-in damper type Collector metal (fin) is fully covered with mold resin. Maximum Ratings (Tc == 25C) ==Characteristics Symbol Rating UnitCollector-

Power Transistors2SD2556Silicon NPN epitaxial planer typeUnit: mm6.50.1For power switching2.30.15.30.14.350.10.50.1 Features High forward current transfer ratio hFE Allowing supply with the radial taping1.00.1 Low collector to emitter saturation voltage VCE(sat):

CEquivalent circuitBDarlington 2SD2558(70)ESilicon NPN Triple Diffused Planar Transistor Application : Series Regulator and General PurposeExternal Dimensions FM100(TO3PF) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol 2SD2558 Unit Symbol Conditions 2SD2558Unit0.20.2 5.515.60.23.45VCBO 200 V ICBO VCB=200V 100max AI

Equivalent circuit CBDarlington 2SD2557(3.2k)(450)ESilicon NPN Triple Diffused Planar Transistor Application : Series Regulator and General Purpose(Ta=25C) External Dimensions MT-100(TO3P) Absolute maximum ratings Electrical Characteristics (Ta=25C)Symbol 2SD2557 Unit Symbol Conditions 2SD2557 Unit0.24.80.415.60.1VCBO 200 V ICBO VCB=200V 100max A

isc Silicon NPN Power Transistor 2SD2551DESCRIPTIONHigh Breakdown Voltage-V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

isc Silicon NPN Power Transistor 2SD2550DESCRIPTIONHigh Breakdown Voltage-V = 1700V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

isc Silicon NPN Darlington Power Transistor 2SD2558DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOHigh DC Current Gain-: h = 1500( Min.) @(I = 1A, V = 5V)FE C CELow Collector Saturation Voltage-: V = 1.5V(Max)@ (I = 1A, I = 5mA)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesig

isc Silicon NPN Power Transistor 2SD2559DESCRIPTIONHigh Breakdown Voltage-V = 1500V (Min)CBOHigh Switching SpeedLow Saturation VoltageBuilt-in Damper DiodeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for color TV horizontal deflection applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMET

isc Silicon NPN Darlington Power Transistor 2SD2557DESCRIPTIONHigh DC Current Gain: h = 1500(Min.)@ I = 1A, V = 5VFE C CECollector-Emitter Breakdown Voltage-: V = 200V(Min)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for series regulator and general purposeapplications.ABSOLUTE MAXIMUM RATINGS(T =2