2SD2580 - описание и поиск аналогов

 ..1. Size:43K  sanyo
 2sd2580.pdf 

Ordering number 5796 NPN Triple Diffused Planar Silicon Transistor 2SD2580 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SD2580] Adoption of MBIT process. 16.0 5.6 3.4 On-chip damper diode. 3.1 2.8 2.0 2.0 1.0 0.6

 ..2. Size:219K  inchange semiconductor
 2sd2580.pdf 

isc Silicon NPN Power Transistor 2SD2580 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

 8.1. Size:218K  toshiba
 2sd2584.pdf 

2SD2584 TOSHIBA Transistor Silicon NPN Triple Diffused Type (darlington) 2SD2584 High Power Switching Applications Unit mm Hammer Drive, Pulse Motor Drive Applications High DC current gain hFE = 2000 (min) (V = 3 V, I = 3 A) CE C Low saturation voltage V = 1.5 V (max) (I = 3 A) CE (sat) C Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-

 8.2. Size:275K  toshiba
 2sd2586.pdf 

2SD2586 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED MESA TYPE 2SD2586 HORIZONTAL DEFLECTION OUTPUT FOR COLOR TV Unit mm High Voltage VCBO = 1500 V Low Saturation Voltage V = 5 V (Max.) CE (sat) High Speed t = 0.3 s (Typ.) f Bult-in Damper Type Collector Metal (Fin) is Fully Covered with Mold Resin. MAXIMUM RATINGS (Tc = 25 C) CHARACTERISTIC SYMBOL

 8.3. Size:43K  sanyo
 2sd2581.pdf 

Ordering number 5818 NPN Triple Diffused Planar Silicon Transistor 2SD2581 Color TV Horizontal Deflection Output Applications Features Package Dimensions High speed. unit mm High breakdown voltage (VCBO=1500V). 2039D High reliability (Adoption of HVP process). [2SD2581] Adoption of MBIT process. 16.0 5.6 3.4 3.1 2.8 2.0 2.0 1.0 0.6 1 2 3 1 Base 2 Collector

 8.4. Size:46K  nec
 2sd2582.pdf 

DATA SHEET SILICON TRANSISTOR 2SD2582 AUDIO FREQUENCY AMPLIFIER, SWITCHING NPN SILICON EPITAXIAL TRANSISTORS FEATURES PACKAGE DIMENSIONS Low VCE(sat) in millimeters (inches) VCE(sat) = 0.15 V Max (@lC/lB = 0.5 A/25 mA) High DC Current Gain 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) hFE = 150 to 600 (@VCE = 2.0 V, lC = 0.5 A) 3.2 0.2 ( 0.126) ABSOLUTE MAXIMUM RATI

 8.5. Size:47K  nec
 2sd2583.pdf 

DATA SHEET SILICON TRANSISTOR 2SD2583 AUDIO FREQUENCY AMPLIFIER, SWITCHING NOPN SILICON EPITAXIAL TRANSISTORS FEATURES PACKAGE DIMENSIONS Low VCE(sat) in millimeters (inches) VCE(sat) = 0.15 V Max (@lC/lB = 1.0 A/50 mA) High DC Current Gain 8.5 MAX. 2.8 MAX. (0.334 MAX.) (0.110 MAX.) hEF = 150 to 600 (@VCE = 2.0 V, lC = 1.0 A) 3.2 0.2 ( 0.126) ABSOLUTE MAXIMUM RAT

 8.6. Size:22K  sanken-ele
 2sd2589.pdf 

Darlington 2SD2589 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1659) Application Audio, Series Regulator and General Purpose Absolute maximum ratings (Ta=25 C) External Dimensions FM-25(TO220) (Ta=25 C) Electrical Characteristics Symbol 2SD2589 Unit Symbol Conditions 2SD2589 Unit 0.2 4.8 0.2 10.2 VCBO 110 V ICBO VCB=110V 100max A 0.1 2.0 IEBO

 8.7. Size:461K  blue-rocket-elect
 2sd2583.pdf 

2SD2583(BR3DA2583QF) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-126F NPN Silicon NPN transistor in a TO-126F Plastic Package. / Features Low saturation voltage, high DC current gain. / Applications Audio frequency amplifier and switching applica

 8.8. Size:206K  inchange semiconductor
 2sd2583.pdf 

isc Silicon NPN Power Transistor 2SD2583 DESCRIPTION High Collector Current-I = 5A C Low Saturation Voltage - V = 0.15V(Max)@ I =1A, I = 50mA CE(sat) C B High DC Current Gain- h = 150 600@ I = 1A FE C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier and switching applications. ABSO

 8.9. Size:221K  inchange semiconductor
 2sd2589.pdf 

isc Silicon NPN Darlington Power Transistor 2SD2589 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 110V(Min) (BR)CEO High DC Current Gain- h = 5000( Min.) @(I = 5A, V = 4V) FE C CE Low Collector Saturation Voltage- V = 2.5V(Max)@ (I = 10A, I = 5mA) CE(sat) C B Complement to Type 2SB1649 Minimum Lot-to-Lot variations for robust device performance and reliable o

 8.10. Size:216K  inchange semiconductor
 2sd2581.pdf 

isc Silicon NPN Power Transistor 2SD2581 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed High Reliability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage

 8.11. Size:214K  inchange semiconductor
 2sd2586.pdf 

isc Silicon NPN Power Transistor 2SD2586 DESCRIPTION High Breakdown Voltage- V = 1500V (Min) CBO High Switching Speed Low Saturation Voltage Built-in Damper Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE