Биполярный транзистор 3DD303C
Даташит. Аналоги
Наименование производителя: 3DD303C
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 30
W
Макcимально допустимое напряжение коллектор-база (Ucb): 250
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6
V
Макcимальный постоянный ток коллектора (Ic): 3
A
Статический коэффициент передачи тока (hfe): 30
Корпус транзистора:
TO3
Аналог (замена) для 3DD303C
-
подбор ⓘ биполярного транзистора по параметрам
3DD303C
Datasheet (PDF)
..1. Size:206K inchange semiconductor
3dd303c.pdf 
isc Silicon NPN Power Transistor 3DD303CDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
8.1. Size:200K inchange semiconductor
3dd303a.pdf 
isc Silicon NPN Power Transistor 3DD303ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 40V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
8.2. Size:201K inchange semiconductor
3dd303b.pdf 
isc Silicon NPN Power Transistor 3DD303BDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 60V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 0.6V(Max) @I = 0.5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBO
9.1. Size:143K crhj
3dd3040a3.pdf 
NPN R 3DD3040 A3 3DD3040 A3 NPN VCEO 450 V IC 2 A Ptot W TC=25 30
9.2. Size:144K crhj
3dd3040 a3.pdf 
NPN R 3DD3040 A3 3DD3040 A3 NPN VCEO 450 V IC 2 A Ptot W TC=25 30
9.3. Size:178K crhj
3dd3015a1.pdf 
NPN R 3DD3015 A1 3DD3015 A1 NPN VCEO 450 V IC 1.2 A Ptot Ta=25 0.8 W
9.4. Size:146K crhj
3dd3015 a3.pdf 
NPN R 3DD3015 A3 3DD3015 A3 NPN VCEO 450 V IC 1.2 A Ptot Tc=25 25 W
9.5. Size:178K crhj
3dd3015 a1.pdf 
NPN R 3DD3015 A1 3DD3015 A1 NPN VCEO 450 V IC 1.2 A Ptot Ta=25 0.8 W
9.6. Size:178K crhj
3dd3040 a1.pdf 
NPN R 3DD3040 A1 3DD3040 A1-H NPN VCEO 450 V IC 2 A Ptot Ta=25 0.8 W
9.7. Size:146K crhj
3dd3015a3.pdf 
NPN R 3DD3015 A3 3DD3015 A3 NPN VCEO 450 V IC 1.2 A Ptot Tc=25 25 W
9.8. Size:160K crhj
3dd3040a4.pdf 
NPN R 3DD3040 A4 3DD3040 A4 NPN VCEO 450 V IC 2 A Ptot W TC=25 30
9.9. Size:149K crhj
3dd3040a6.pdf 
NPN R 3DD3040 A6 3DD3040 A6 NPN VCEO 450 V IC 2 A Ptot W TC=25 50
9.10. Size:160K crhj
3dd3020a4.pdf 
NPN R 3DD3020 A4 3DD3020 A4 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 30 W
9.11. Size:150K crhj
3dd3020 a6.pdf 
NPN R 3DD3020 A6 3DD3020 A6 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 50 W
9.12. Size:145K crhj
3dd3040a7.pdf 
NPN R 3DD3040 A7 3DD3040 A7 NPN VCEO 450 V IC 2 A Ptot W TC=25 50
9.13. Size:149K crhj
3dd3040 a6.pdf 
NPN R 3DD3040 A6 3DD3040 A6 NPN VCEO 450 V IC 2 A Ptot W TC=25 50
9.14. Size:178K crhj
3dd3040a1.pdf 
NPN R 3DD3040 A1 3DD3040 A1-H NPN VCEO 450 V IC 2 A Ptot Ta=25 0.8 W
9.15. Size:146K crhj
3dd3040 a7.pdf 
NPN R 3DD3040 A7 3DD3040 A7 NPN VCEO 450 V IC 2 A Ptot W TC=25 50
9.16. Size:150K crhj
3dd3020a6.pdf 
NPN R 3DD3020 A6 3DD3020 A6 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 50 W
9.17. Size:147K crhj
3dd3020a3.pdf 
NPN R 3DD3020 A3 3DD3020 A3 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 30 W
9.18. Size:147K crhj
3dd3020 a3.pdf 
NPN R 3DD3020 A3 3DD3020 A3 NPN VCEO 450 V IC 1.5 A Ptot Tc=25 30 W
9.19. Size:151K china
3dd3055.pdf 
3DD3055(2N3055) NPN A B C D E F PCM TC=25 100 W ICM 15 A Tjm 175 Tstg -55~150 VCE=10V Rth 1.5 /W IC=3A V(BR)CBO ICB=5mA 80 150 200 250 350 400 V V(BR)CEO ICE=5mA 50 100 150 200 250 300 V V(BR)EBO IEB=5mA 5.0 V ICBO VCB=50V
9.20. Size:167K wuxi china
3dd3040a3.pdf 
RNPN 3DD3040 A3 3DD3040 A3 NPN VCEO 450 V IC 2 A Ptot TC=25 30 W
9.21. Size:201K inchange semiconductor
3dd301d.pdf 
isc Silicon NPN Power Transistor 3DD301DDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 150V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
9.22. Size:201K inchange semiconductor
3dd301c.pdf 
isc Silicon NPN Power Transistor 3DD301CDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 100V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
9.23. Size:202K inchange semiconductor
3dd301b.pdf 
isc Silicon NPN Power Transistor 3DD301BDESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 50V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 2.0V(Max) @I = 3ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for B/W TV vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
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.
History: GES3395
| 2TD8307A9
| KTC3205
