T25 - описание и поиск аналогов

NPN T25 TO-3PN 1 2 3 (TC=25 ) VCBO

DISCRETE SEMICONDUCTORS DATA SHEET BFT25A NPN 5 GHz wideband transistor December 1997 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 5 GHz wideband transistor BFT25A FEATURES PINNING Low current consumption PIN DESCRIPTION (100 A - 1 mA) Code V10 Low noise figure 1 base Gold metallization ensures 2

DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor Product specification November 1992 NXP Semiconductors Product specification NPN 2 GHz wideband transistor BFT25 DESCRIPTION PINNING NPN transistor in a plastic SOT23 PIN DESCRIPTION envelope. Code V1p It is primarily intended for use in RF 1 base lfpage 3 low power amplifiers, such as in 2 emitter po

DISCRETE SEMICONDUCTORS DATA SHEET BFT25 NPN 2 GHz wideband transistor November 1992 Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 2 GHz wideband transistor BFT25 DESCRIPTION PINNING NPN transistor in a plastic SOT23 PIN DESCRIPTION envelope. Code V1p It is primarily intended for use in RF 1 base fpage 3 low po

BFT25A NPN 5 GHz wideband transistor Rev. 04 6 July 2004 Product data sheet 1. Product profile 1.1 General description The BFT25A is a silicon NPN transistor, primarily intended for use in RF low power amplifiers, such as pocket telephones and paging systems with signal frequencies up to 2 GHz. The transistor is encapsulated in a 3-pin plastic SOT23 envelope. 1.2 Features Low cur

GT25G102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G102 Unit mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage V = 8V (Max.) (I = 150A) CE (sat) C Enhancement-Mode 12V Gate Drive MAXIMUM RATINGS (Ta = 25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 400 V Gate-Emitter Voltage VGES 20 V

GT25G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT25G101 Unit in mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage VCE (sat)=8V (Max.) (IC=170A) Enhancement-Mode 20V Gate Drive ABSOLUTE MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Emitter Voltage VCES 400 V Gate-Emitter Voltage VGES 25 V

GT25Q301 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT25Q301 High Power Switching Applications Unit mm Motor Control Applications Third-generation IGBT Enhancement mode type High speed tf = 0.32 s (max) Low saturation voltage VCE (sat) = 2.7 V (max) FRD included between emitter and collector Absolute Maximum Ratings (Ta = 25

DGTD120T25S1PT 1200V FIELD STOP IGBT IN TO-247 Description Features The DGTD120T25S1PT is produced using advanced Field Stop High Speed Switching & Low VCE(sat) Loss Trench IGBT Technology, which provides low VCE(sat) , excellent VCE(sat) = 2.0V @ IC = 25A quality and high-switching performance. High Input Impedance trr = 100ns (typ) @ diF/dt = 500A/ s Ultra

VCES = 1600 V IXGH 25N160 High Voltage IGBT IC25 = 75 A IXGT 25N160 VCE(sat)= 2.5 V For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 1600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1600 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C 75 A TO-268 (IXGT) IC110

Preliminary Technical Information IXGH25N250 VCES = 2500 V High Voltage IGBT IXGT25N250 IC25 = 60 A For Capacitor Discharge Applications IXGV25N250S VCE(sat) 2.9 V TO-247 (IXGH) Symbol Test Conditions Maximum Ratings G VCES TJ = 25 C to 150 C 2500 V C C (TAB) E VCGR TJ = 25 C to 150 C; RGE = 1 M 2500 V VGES Continuous 20 V TO-268 (IXGT) VGEM Transi

VCES = 1600 V IXGH 25N160 High Voltage IGBT IC25 = 75 A IXGT 25N160 VCE(sat)= 2.5 V For Capacitor Discharge Applications Preliminary Data Sheet Symbol Test Conditions Maximum Ratings TO-247 (IXGH) VCES TJ = 25 C to 150 C 1600 V VCGR TJ = 25 C to 150 C; RGE = 1 M 1600 V VGES Continuous 20 V G C C (TAB) VGEM Transient 30 V E IC25 TC = 25 C 75 A TO-268 (IXGT) IC110

Advance Technical Information VCES = 2500V High Voltage IGBT IXGT25N250HV IC110 = 25A For Capacitor Discharge Applications VCE(sat) 2.9V TO-268 G E Symbol Test Conditions Maximum Ratings C (Tab) VCES TJ = 25 C to 150 C 2500 V G = Gate C = Collector VCGR TJ = 25 C to 150 C, RGE = 1M 2500 V E = Emiiter Tab = Collector VGES Continuous 20 V VGEM Tra

MOSFET Power, N-Channel, SUPERFET III, Easy Drive 650 V, 12 A, 250 mW FCMT250N65S3 Description SUPERFET III MOSFET is ON Semiconductor s brand-new high www.onsemi.com voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize VDSS RDS(ON

UNISONIC TECHNOLOGIES CO., LTD UTT25P06 Preliminary Power MOSFET -60V, -27.5A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT25P06 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT25P06 is suitable for power sup

UNISONIC TECHNOLOGIES CO., LTD UTT25P10 Power MOSFET 25A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT25P10 is suitable for motor drivers, switc

UNISONIC TECHNOLOGIES CO., LTD UTT25P10 Power MOSFET Preliminary 25A, 100V P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT25P10 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching speed and a minimum on-state resistance, and it can also withstand high energy in the avalanche. This UTC UTT25P10 is suitable for motor d

UNISONIC TECHNOLOGIES CO., LTD UTT25N08 Preliminary Power MOSFET 25A, 80V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT25N08 is an N-channel enhancement mode power MOSFET using UTC s advanced technology to provide the customers with a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mod

APT25GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through TO-247 technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch- mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provides a lower cost alt

APTGT25DA120D1 VCES = 1200V Boost chopper IC = 25A @ Tc = 80 C Trench IGBT Power Module Application 3 AC and DC motor control Switched Mode Power Supplies Power Factor Correction Features Trench + Field Stop IGBT Technology 1 Q2 - Low voltage drop 6 - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes 7 - Lo

TYPICAL PERFORMANCE CURVES APT25GP120BDF1 APT25GP120BDF1 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology TO-247 and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode power supplies and tail current sensitive applications. In many cases, the

TYPICAL PERFORMANCE CURVES APT25GN120B2DQ2(G) 1200V APT25GN120B2DQ2 APT25GN120B2DQ2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Non-Punch Through (NPT) Field Stop technology, these IGBT s (B2) have a very short, low amplitude tail current and low Eoff. The Trench Gate design T-Max results in superior VCE(on) performance. Easy paralleling resu

TYPICAL PERFORMANCE CURVES APT25GP90BDF1 APT25GP90BDF1 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C E C Low Conduction Loss 100 kHz

TYPICAL PERFORMANCE CURVES APT25GP90B APT25GP90B 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C C E Low Conduction Loss 100 kHz operat

TYPICAL PERFORMANCE CURVES APT25GT120BR(G) 1200V APT25GT120BR APT25GT120BRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Thunderbolt IGBT The Thunderblot IGBT is a new generation of high voltage power IGBTs. Using Non- Punch Through Technology, the Thunderblot IGBT offers superior ruggedness and ultrafast switching speed. G C E Low Forward Voltage Drop

TYPICAL PERFORMANCE CURVES APT25GP90BDQ1(G) 900V APT25GP90BDQ1 APT25GP90BDQ1G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency swi

TYPICAL PERFORMANCE CURVES APT25GN120B_S(G) 1200V APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra (B) low VCE(ON) and are ideal for low frequency applications that require absolute minimum D3PAK conduction loss. Easy paralleling is a re

APTGT25A120D1 VCES = 1200V Phase leg IC = 25A @ Tc = 80 C Trench IGBT Power Module Application Welding converters 3 Q1 Switched Mode Power Supplies 4 Uninterruptible Power Supplies Motor control 5 Features 1 Trench + Field Stop IGBT Technology Q2 - Low voltage drop 6 - Low tail current - Switching frequency up to 20 kHz 7 - Soft recov

TYPICAL PERFORMANCE CURVES APT25GN120B_S(G) 1200V APT25GN120B APT25GN120S APT25GN120BG* APT25GN120SG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra (B) low VCE(ON) and are ideal for low frequency applications that require absolute minimum D3PAK conduction loss. Easy paralleling is a re

TYPICAL PERFORMANCE CURVES APT25GP90B APT25GP90B 900V POWER MOS 7 IGBT TO-247 The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. G C C E Low Conduction Loss 100 kHz operat

TYPICAL PERFORMANCE CURVES APT25GN120B APT25GN120B 1200V Utilizing the latest Field Stop technology, these IGBT s have a very short, low amplitude tail current and low Eoff. The Trench Gate design results in superior VCE(on) performance. Easy paralleling results from very tight parameter distribution and slightly positive VCE(on) temperature coefficient. Built-in gate resistance en

APT25GP120B 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through TO-247 technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch- mode power supplies and tail current sensitive applications. In many cases, the POWER MOS 7 IGBT provides a lower cost alt

APTGT25SK120D1 VCES = 1200V Buck chopper IC = 25A @ Tc = 80 C Trench IGBT Power Module Application 3 AC and DC motor control Q1 Switched Mode Power Supplies 4 Features Trench + Field Stop IGBT Technology 5 - Low voltage drop 1 - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage curr

MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR CT25AS-8 STROBE FLASHER USE CT25AS-8 OUTLINE DRAWING Dimensions in mm 6.5 0.5 0.1 5.0 0.2 4 1.0 0.9MAX. 0.5 0.2 2.3 2.3 0.8 1 2 3 wr q GATE q w COLLECTOR e EMITTER r COLLECTOR e VCES ................................................................................400V ICM ..............................................

SML9030 T254 MECHANICAL DATA P CHANNEL Dimensions in mm (inches) MOS 13.59 (0.535) 6.32 (0.249) 13.84 (0.545) 6.60 (0.260) 3.53 (0.139) 1.02 (0.040) TRANSISTOR Dia. 3.78 (0.149) 1.27 (0.050) VDSS 50V ID(cont) 18A RDS(on) 0.14 1 2 3 FEATURES P CHANNEL REPETITIVE AVALANCHE RATED DYNAMIC dv/dt RATING 0.89 (0.035) 1.14 (0.045) 3.81 (0.150) FAST SWITCHI

IRFY440-T257 MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET 4.83 (0.190) 5.08 (0.200) 10.41 (0.410) 10.67 (0.420) 0.89 (0.035) 1.14 (0.045) FOR HI REL APPLICATIONS 3.56 (0.140) Dia. 3.81 (0.150) VDSS 500V 1 2 3 ID(cont) 5.5A RDS(on) 0.85 0.64 (0.025) Dia. 0.89 (0.035) FEATURES 2.54 (0.100) 3.05 (0.120) BSC BSC HERMETICALLY SEALED TO257AA

IRFY140-T257 MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET 4.83 (0.190) 5.08 (0.200) 10.41 (0.410) 10.67 (0.420) 0.89 (0.035) 1.14 (0.045) FOR HI REL APPLICATIONS 3.56 (0.140) Dia. 3.81 (0.150) VDSS 100V 1 2 3 ID(cont) 18A RDS(on) 0.092 0.64 (0.025) Dia. 0.89 (0.035) FEATURES 2.54 (0.100) 3.05 (0.120) BSC BSC HERMETICALLY SEALED TO257AA

SEMICONDUCTOR KGT25N135NDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High system efficiency Soft current turn-off waveforms Extremely enhanced avalanche capability MAXIMUM RAT

SEMICONDUCTOR KGT25N135KDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High ruggedness, temperature stable behavior Soft current turn-off waveforms Extremely enhanced avalanche c

SEMICONDUCTOR KGT25N120KDA TECHNICAL DATA General Description B A KEC NPT Trench IGBTs offer low switching losses, high energy O S K efficiency and short circuit ruggedness. It is designed for applications such as motor control, uninterrupted power supplies(UPS), general inverters. DIM MILLIMETERS _ + A 15.90 0.30 _ B 5.00 + 0.20 _ C 20.85 + 0.30 FEATURES _ D 3.00 + 0.2

SEMICONDUCTOR KGT25N120NDA TECHNICAL DATA General Description A KEC NPT IGBTs offer low switching losses, high energy efficiency Q B N O K and high avalanche ruggedness for soft switching application such as DIM MILLIMETERS IH(induction heating), microwave oven, etc. _ A + 15.60 0.20 _ B 4.80 + 0.20 _ C 19.90 + 0.20 _ D 2.00 0.20 FEATURES + _ d + 1.00 0.20 High speed

SEMICONDUCTOR KGT25N120NDH TECHNICAL DATA General Description KEC NPT IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High system efficiency Soft current turn-off waveforms Extremely enhanced avalanche capability MAXIMUM RAT

APT25M100J 1000V, 25A, 0.33 Max N-Channel MOSFET Power MOS 8 is a high speed, high voltage N-channel switch-mode power MOSFET. A proprietary planar stripe design yields excellent reliability and manufacturability. Low switching loss is achieved with low input capacitance and ultra low Crss "Miller" capaci- tance. The intrinsic gate resistance and capacitance of the poly-silicon

AOT254L/AOB254L 150V N-Channel MOSFET General Description Product Summary VDS 150V The AOT254L/AOB254L uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 32A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

AOT2502L/AOB2502L 150V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 150V Low RDS(ON) ID (at VGS=10V) 106A Low Gate Charge RDS(ON) (at VGS=10V)

AOT2500L/AOB2500L 150V N-Channel MOSFET General Description Product Summary VDS The AOT2500L/AOB2500L uses Trench MOSFET 150V ID (at VGS=10V) 152A technology that is uniquely optimized to provide the most RDS(ON) (at VGS=10V)

AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced MOSTM high voltage IDM 104A process that is designed to deliver high levels of RDS(ON),max 0.19 performance and robustness in switching applications. Qg,typ 26.4nC By provi

AOT2502L/AOB2502L 150V N-Channel MOSFET General Description Product Summary VDS Trench Power MV MOSFET technology 150V Low RDS(ON) ID (at VGS=10V) 106A Low Gate Charge RDS(ON) (at VGS=10V)

AOT25S65/AOB25S65/AOTF25S65 TM 650V 25A MOS Power Transistor General Description Product Summary VDS @ Tj,max 750V The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced MOSTM high voltage IDM 104A process that is designed to deliver high levels of RDS(ON),max 0.19 performance and robustness in switching applications. Qg,typ 26.4nC By provi

AOT254L/AOB254L 150V N-Channel MOSFET General Description Product Summary VDS 150V The AOT254L/AOB254L uses Trench MOSFET technology that is uniquely optimized to provide the most ID (at VGS=10V) 32A efficient high frequency switching performance. Both RDS(ON) (at VGS=10V)

AP15T25H-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 250V D Lower Gate Charge RDS(ON) 320m Fast Switching Characteristics ID 8.7A RoHS Compliant & Halogen-Free G S Description G AP15T25 series are from Advanced Power innovated design and D S TO-252(H) silicon process technology

AFN02N60 Alfa-MOS 600V / 2A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN02N60 is an N-channel enhancement mode Power 600V/1A,RDS(ON)=4.2 (MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state

AFN04N60 Alfa-MOS 600V / 4A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN04N60 is an N-channel enhancement mode Power 600V/2A,RDS(ON)=2.4 (MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state

AFN06N60 Alfa-MOS 600V / 6A N-Channel Technology Enhancement Mode MOSFET General Description Features AFN06N60 is an N-channel enhancement mode Power 600V/3A,RDS(ON)=1.5 (MAX)@VGS=10V MOSFET which is produced using VDMOS technology. The Low gate charge improved planar stripe cell and the improved guard ring Low Crss terminal have been especially tailored to minimize on-state

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2506QLT1G Series NPN Silicon 3 FEATURE High current capacity in compact package. Epitaxial planar type. 1 PNP complement LMBT2516QLT1G 2 We declare that the material of product compliance with RoHS requirements. SOT 23 DEVICE MARKING AND ORDERING INFORMATION COLLECTOR Device Marking Shipping 3 LMBT2506PLT1G 1GA

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LMBT2516QLT1G Series PNP Silicon 3 FEATURE High current capacity in compact package. Epitaxial planar type. 1 NPN complement LMBT2506QLT1G 2 We declare that the material of product compliance with RoHS requirements. SOT 23 DEVICE MARKING AND ORDERING INFORMATION COLLECTOR Device Marking Shipping 3 LMBT2516PLT1G 1GB

Silicon FS Planar IGBT R BT25T120ANF General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 25 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot TC=25 312 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.9 V Features Trench FS Technology, Positive temperature coef

SMD Type MOSFET N-Channel MOSFET NDT25N06 TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 Features 5.30-0.2 +0.8 0.50 -0.7 VDS (V) = 60V ID = 25 A (VGS = 10V) RDS(ON) 65m (VGS = 10V) 0.127 +0.1 0.80-0.1 max High Current Capability Low Gate Charge + 0.1 2.3 0.60- 0.1 1 Gate +0.15 2.Drain 4 .60 -0.15 2 Drain 3 Source 1.Gate 3.So

SMD Type Transistors PNP Transistors ZX5T250 Features Collector Current Capability IC=-3A 1.70 0.1 Collector Emitter Voltage VCEO=-60V Complement to ZX5T150 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -70 V Collector to Emitter Voltage VCEO -60 V Emitter to B

SGT25U120FD1P7 25A 1200V C 2 SGT25U120FD1P7 4 1 Plus Field Stop IV+ G UPS SMPS PFC 3 E 25A 1200V VCE(sat)( )=2.2V@IC=25A

SGT25T120FD1P7 25A 1200V SGT25T120FD1P7 Trench Field Stop UPS SMPS PFC 25A 1200V VCE(sat)( )=2.25V@

MMGT25H120XB6C 1200V 25A PIM Module September 2015 Version 0 RoHS Compliant PRODUCT FEATURES High level of integration IGBT CHIP(Trench+Field Stop technology) Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and soft reverse recovery Industry standard package with insulated copper ba

http //www.ncepower.com NCEP01T25T NCE N-Channel Super Trench Power MOSFET Description The NCEP01T25T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency swit

http //www.ncepower.com NCEP01T25LL NCE N-Channel Super Trench Power MOSFET Description The NCEP01T25LL uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =100V,ID =250A frequency switching performance. Both conduction and RDS(ON)=2.2m (typical) @ VGS=10V switching power losses are minimized due to an extremely l

http //www.ncepower.com NCEP85T25VD NCE N-Channel Super Trench Power MOSFET Description The NCEP85T25VD uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-frequency switc

Pb Free Product http //www.ncepower.com NCEP85T25 NCE N-Channel Super Trench Power MOSFET Description The NCEP85T25 uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of R and Q . This device is ideal for DS(ON) g high-f

Pb Free Product http //www.ncepower.com NCEP85T25D NCE N-Channel Super Trench Power MOSFET Description The NCEP85T25D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

Pb Free Product http //www.ncepower.com NCEP85T25T NCE N-Channel Super Trench Power MOSFET Description The NCEP85T25T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for

OST25N65PMF Enhancement Mode N-Channel Power IGBT General Description OST25N65PMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

OST25N65FMF Enhancement Mode N-Channel Power IGBT General Description OST25N65FMF uses advanced Oriental-Semi s patented Trident-Gate Bipolar Transistor (TGBTTM) technology to provide extremely low V (sat), low gate charge, and excellent switching CE performance. This device is suitable for mid to high range switching frequency converters. Features Advanced TGBTTM technolog

ST25N10 N Channel Enhancement Mode MOSFET 25.0A DESCRIPTION ST25N10 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. The ST16N10 has been designed specially to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been o

Silicon FS Planar IGBT R BT25T120ANF General Description VCES 1200 V Using HUAJING's proprietary trench design and advanced FS(field IC 25 A stop) technology, the 1200V Trench FS-IGBT offers superior conduction Ptot TC=25 312 W and switching performances, high avalanche ruggedness. VCE(SAT) 1.9 V Features Trench FS Technology, Positive temperature coef

Silicon FS Trench IGBT R BT25T120 CKR General Description VCES 1200 V Using HUAJING's proprietary trench design, advanced FS(field stop) IC 25 A technology and integrated with Free Wheeling Diode, the 1200V Trench FS Ptot (TC=25 ) 208 W IGBT offers superior conduction and switching performances, high VCE(SAT) 1.95 V avalanche ruggedness. Features Trench FS T

1200V 25A Trench and Field Stop IGBT JJT25N120SE Key performance V =1200V CE TO-247 I =25A@T =100 C C V =1.7V CE(sat) Features Trench and field-stop technology High speed switching G C Low collector to emitter saturation voltage E Easy parallel switching capability Short circuit withstands time 10 s High ruggedness performance Ro

1350V 25A Trench and Field Stop IGBT JJT25N135UE Key performance V =1350V CE TO-247 I =25A@T =100 C C V =2.0V CE(sat) Features Trench and field-stop technology High speed switching G C Positive VCE (sat) temperature coefficient. E Fast switching and short tail current. High ruggedness performance Applications Induction cooking R

SPT25N120U1T8TL 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A C improved reliability V I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due t

SPT25N120F1 1200V /20A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 20 A C improved reliability V I =20A 1.9 V CE(SAT) C Trench-Stop Technology offering very tight parameter distribution high ruggedness, temperature stable behavior Short circuit withstand time 10 s High ruggedness, temperature stable

SPT25N120F1A1T8TL 1200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V for V 1200 V CE improved reliability I 25 A C Trench-Stop Technology offering High speed switching V I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V CEsat En

SPT25N120T1T8TL 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A C improved reliability V I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering Very tight parameter distribution High ruggedness, temperature stable behavior Short circuit withstand time 10 s Low V CE(SAT) Easy parallel sw

SPT25N135F1AT8TL 1350V /25A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1350 V CE switching losses, high energy efficiency and I 25 A C high avalanche ruggedness for soft switching applications such as inductive heating, V I =25A 2.0 V CE(SAT) C microwave oven, etc. FEATURES High breakdown voltage to 1350V for improved reliability Trench-Stop Tec

UTT25P10L www.VBsemi.tw P-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) Definition TrenchFET Power MOSFET 0.167 at VGS = - 10 V - 18 - 100 37 100 % Rg and UIS Tested 0.180 at VGS = - 4.5 V - 14 Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-220AB Power Switc

SPN2054T252RG www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.007 at VGS = 10 V 50 30 25 nC 0.009 at VGS = 4.5 V 40 APPLICATIONS D OR-ing Server TO-252 DC/DC G G D S S Top View N-Channel MOSFET

VBGT25N135 www.VBsemi.com General Description VBsemi Field Stop Trench IGBTs offer low switching losses, high energy efficiency and high avalanche ruggedness for soft switching application such as IH(induction heating), microwave oven, etc. FEATURES High speed switching High ruggedness, temperature stable behavior Soft current turn-off waveforms Extremely enhanced avala

SPN9971T252 www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

SPT25N120F1A1 1200V /25A Trench Field Stop IGBT High breakdown voltage to 1200V for V 1200 V CE improved reliability I 25 A C Trench-Stop Technology offering High speed switching V I =25A 2.0 V CE(SAT) C High ruggedness, temperature stable Low V CEsat Easy parallel switching capability due to positive temperature coefficient in V CEsat Enhanc

SPT25N120U1 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A C improved reliability V I =25A 2.05 V CE(SAT) C Trench-Stop Technology offering High speed switching High ruggedness, temperature stable Short circuit withstand time 10 s Low V CEsat Easy parallel switching capability due to po

SPT25N120T1 1200V /25A Trench Field Stop IGBT FEATURES V 1200 V CE High breakdown voltage to 1200V for I 25 A C improved reliability V I =25A 1.65 V CE(SAT) C Trench-Stop Technology offering Very tight parameter distribution High ruggedness, temperature stable behavior Short circuit withstand time 10 s Low V CE(SAT) Easy parallel switch

SPT25N135F1A 1350V /25A Trench Field Stop IGBT Field Stop Trench IGBTs offer low V 1350 V CE switching losses, high energy efficiency and I 25 A C high avalanche ruggedness for soft switching applications such as inductive heating, V I =25A 2.0 V CE(SAT) C microwave oven, etc. FEATURES High breakdown voltage to 1350V for improved reliability Trench-Stop Technol

isc N-Channel MOSFET Transistor AOT2500L FEATURES Drain Current I = 152A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R = 6.5m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

isc N-Channel MOSFET Transistor AOT25S65 FEATURES Drain Current I = 25A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 0.19 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

isc N-Channel MOSFET Transistor AOT2502L FEATURES Drain Current I = 106A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R = 11m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purp

isc N-Channel MOSFET Transistor AOT254L FEATURES Drain Current I = 32A@ T =25 D C Drain Source Voltage- V = 150V(Min) DSS Static Drain-Source On-Resistance R = 46m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general purpos