Биполярный транзистор 2SD2114 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD2114
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 12 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 350 MHz
Ёмкость коллекторного перехода (Cc): 8 pf
Статический коэффициент передачи тока (hfe): 820
Корпус транзистора: SOT23
2SD2114 Datasheet (PDF)
2sd2114.pdf
TransistorsHigh-current Gain Medium Power Transistor (20V, 0.5A)2SD2114K / 2SD2144SFFeatures FExternal dimensions (Units: mm)1) High DC current gain.hFE = 1200 (Typ.)2) High emitter-base voltage.VEBO = 12V (Min.)3) Low VCE(sat).VCE(sat) = 0.18V (Typ.)(IC / IB = 500mA / 20mA)FStructureEpitaxial planar typeNPN silicon transistor(96-232-C107)232Transistors 2SD211
2sd2114.pdf
2SD2114 0.5A , 25V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE High DC Current Gain. AL High Emitter-Base Voltage. VEBO=12V (Min.) 33Top View C BCLASSIFICATION OF hFE 11 22K EProduct-Rank 2SD2114-V 2SD2114-W Range 820~1800 1200~2700 DMarking BBV
2sd2114.pdf
2SD2114TRANSISTOR (NPN)FEATURES SOT-23 High DC current gain. High emitter-base voltage. Low VCE (sat). MARKING: BBV,BBW 1. BASE 2.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 12 V IC Collector Current -Continuou
2sd2114 sot-23.pdf
2SD2114 SOT-23 Transistor(NPN)1. BASE SOT-232.EMITTER 3.COLLECTOR Features High DC current gain. hFE = 1200 (Typ.) High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA) MARKING: BBV,BBW MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collec
2sd2114.pdf
SMD Type TransistorsNPN Transistors2SD2114SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=500mACollector Collector Emitter Voltage VCEO=20V 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1Base1.Base2.EmitterEmitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Ba
2sd2114ks.pdf
High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K Features Dimensions (Unit : mm) 1) High DC current gain. 2SD2114K2.90.21.1+0.2 hFE = 1200 (Typ.) 1.90.2 -0.10.80.10.95 0.952) High emitter-base voltage. (1) (2) VEBO =12V (Min.) 00.13) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (3) (IC / IB = 500mA / 20mA) +0.10.15-0.06+0.10.4-0
2sd2114k-s.pdf
2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S External dimensions (Unit : mm) Features 1) High DC current gain. 2SD2114K2.90.21.1+0.21.90.2 -0.1 hFE = 1200 (Typ.) 0.80.10.95 0.952) High emitter-base voltage. (1) (2)00.1 VEBO =12V (Min.) 3) Low VCE (sat). (3)+0.1 VCE (sat) = 0.18V (Ty
2sd2114k 2sd2144s.pdf
2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S External dimensions (Unit : mm) Features 1) High DC current gain. 2SD2114K2.90.21.1+0.21.90.2 -0.1 hFE = 1200 (Typ.) 0.80.10.95 0.952) High emitter-base voltage. (1) (2)00.1 VEBO =12V (Min.) 3) Low VCE (sat). (3)+0.1 VCE (sat) = 0.18V (Ty
l2sd2114kvlt1g.pdf
LESHAN RADIO COMPANY, LTD.Epitaxial planar typeNPN silicon transistorL2SD2114KVLT1G Series FeaturesS-L2SD2114KVLT1G Series1) High DC current gain.hFE = 1200 (Typ.)2) High emitter-base voltage.3VEBO =12V (Min.)3) Low VCE (sat).1VCE (sat) = 0.18V (Typ.)2(IC / IB = 500mA / 20mA)4) We declare that the material of product compliance with RoHS requirements.SOT 2
l2sd2114kwlt1g.pdf
LESHAN RADIO COMPANY, LTD.Epitaxial planar typeNPN silicon transistor L2SD2114KVLT1G Series Features S-L2SD2114KVLT1G Series1) High DC current gain.hFE = 1200 (Typ.)32) High emitter-base voltage.VEBO =12V (Min.)3) Low VCE (sat). 1VCE (sat) = 0.18V (Typ.)2(IC / IB = 500mA / 20mA)4) We declare that the material of product compliance with RoHS requirements.SOT 23 (TO
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050