S9015W. Аналоги и основные параметры
Наименование производителя: S9015W
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 150 MHz
Ёмкость коллекторного перехода (Cc): 7 pf
Статический коэффициент передачи тока (hFE): 200
Корпус транзистора: SOT323
Аналоги (замена) для S9015W
- подборⓘ биполярного транзистора по параметрам
S9015W даташит
s9015w.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors S9015W TRANSISTOR (PNP) SOT 323 FEATURES Small Surface Mount Package High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -50 V CBO 2. EMITTER V Collector-Emitter Voltage -45 V CEO
s9015w.pdf
S901 5W TRANSISTOR(PNP) SOT 323 FEATURES Small Surface Mount Package High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -50 V CBO 2. EMITTER V Collector-Emitter Voltage -45 V CEO 3. COLLECTOR V Emitter-Base Voltage -5 V EBO IC Collector Current -100 mA P Collector Power Diss
s9015w.pdf
TRANSISTOR(PNP) FEATURES Small Surface Mount Package SOT 323 High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -50 V CBO 2. EMITTER VCEO Collector-Emitter Voltage -45 V 3. COLLECTOR VEBO Emitter-Base Voltage -5 V I Collector Current -100 mA C P Collector Power Dissipation 200
s9015w-l s9015w-h.pdf
S9015W TRANSISTOR(PNP) FEATURES Small Surface Mount Package SOT 323 High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage -50 V 2. EMITTER V Collector-Emitter Voltage -45 V CEO 3. COLLECTOR V Emitter-Base Voltage -5 V EBO I Collector Current -100 mA C P Collector Power Dissipatio
ss9015.pdf
SS9015 Low Frequency, Low Noise Amplifier Complement to SS9014 TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -100 mA PC Collector Power Dissi
ss9015.pdf
SS9015 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY, LOW NOISE AMPLIFIER TO-92 Complement to SS9014 ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 mA Collector Current IC -100 mW Collector Dissipation PC 450 Junction Temperature TJ 150 Storage Tem
mms9015.pdf
MMS9015 Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 PNP Silicon Plastic- Epoxy Meets UL 94 V-0 Flammability Rating Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Encapsulate Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless Otherwise Specified Transistor Operating Junction Temperature Range -55
s9015b s9015c s9015d.pdf
S9015-B MCC Micro Commercial Components TM S9015-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 S9015-D Phone (818) 701-4933 Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors Capable of 0.45Watts(Tamb=25OC) of Power Dissipation. PNP Silicon Collector-current -0.1A Collector-base Voltage -50V Transistors Operating
sts9015.pdf
STS9015 Semiconductor Semiconductor PNP Silicon Transistor Description General purpose application. Switching application. Features Excellent hFE linearity hFE(IC=0.1mA) / hFE(IC=2mA) = 0.95(Typ.) Low noise NF = 10dB(Max.) Complementary pair with STS9014 Ordering Information Type NO. Marking Package Code STS9015 STS9015 TO-92 Outline Dimensions uni
s9015.pdf
S9015 PNP Silicon Elektronische Bauelemente Low Frequency, Low Noise Amplifier RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 FEATURES Collector Dim Min Max 3 3 A 2.800 3.040 B 1.200 1.400 Power dissipation 1 1 C 0.890 1.110 2 Base PCM 0.2 W D 0.370 0.500 Collector Current G 1.780 2.040 2 ICM -0.1 A A Emitter H 0.013 0.100
s9015t.pdf
S9015T -0.1A , -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. High Total Power Dissipation.(PC=0.45W) High hFE and Good Linearity CLASSIFICATION OF hFE Product-Rank S9015T-A S9015T-B S9015T-C S9015T-D Range 60 150
s9015.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 S9015 TRANSISTOR (PNP) FEATURES 1. BASE Complementary to S9014 2. EMITTER 3. COLLECTOR MARKING M6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base V
s9015.pdf
S901 5 TRANSISTOR(PNP) SOT-23 FEATURES 1. BASE Complementary to S9014 2. EMITTER 3. COLLECTOR MARKING M6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.2 W T
s9015.pdf
S9015 Silicon Epitaxial Planar Transistor FEATURES A SOT-23 Complementary To S9014. Dim Min Max A 2.70 3.10 E Excellent HFE Linearity. B 1.10 1.50 K B C 1.0 Typical Power dissipation.(PC=0.2W) D 0.4 Typical E 0.35 0.48 J D G 1.80 2.00 G H 0.02 0.1 APPLICATIONS J 0.1 Typical H K 2.20 2.60 Low frequency , low noise amplifier. C All Dimensions in mm ORDERING
s9015 sot-23.pdf
S9015 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9014 MARKING M6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.
s9015 to-92.pdf
S9015(PNP) TO-92 Bipolar Transistors TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features High total power dissipation.(PC=0.45W) High hFE and good linearity Complementary to S9014 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V Di
s9015lt1.pdf
S9015LT1 PNP 3 1 2 SOT-23 Value V CEO -45 -50 -5 -100 225 1.8 556 S9015QLT1=15Q S9015RLT1=15R S9015SLT1=15S -0.1 -45 -40 -100 -5.0 -100 u -0.1 -40 -0.1 u -3.0 WEITRON 1/ 28-Apr-2011 http //www.weitron.com.tw S9015LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain
s9015.pdf
S9015 PNP General Purpose Transistors TO-92 1. EMITTER 1 2 2. BASE 3 3. COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Rating Symbol Value Unit Collector-Emitter Voltage V CEO -45 Vdc Collector-Base Voltage VCBO -50 Vdc Emitter-Base Voltage VEBO -5.0 Vdc Collector Current IC 100 mAdc PD 0.4 Total Device Dissipation T =25 C W A Junction Temperature T 150 j C -55 to +150 S
s9015lt1.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors S9015LT1 TRANSISTOR (PNP) SOT-23 FEATURES 1. BASE 2. EMITTER Power dissipation 3. COLLECTOR PCM 0.2 W (Tamb=25 ) Collector current 2. 4 ICM -0.1 A 1. 3 Collector-base voltage V(BR)CBO -50 V Operating and storage junction temperature range TJ, Tstg -55 to
s9015.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors TO-92 S9015 TRANSISTOR (PNP) 1.EMITTER FEATURES 2. BASE High total power dissipation.(PC=0.45W) High hFE and good linearity 3. COLLECTOR Complementary to S9014 1 2 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Vol
s9015.pdf
PNP PNP EPITAXIAL SILICON TRANSISTOR R S9015 MAIN CHARACTERISTICS Package I 100mA C V 45V CEO P (SOT-23) 200mW C APPLICATIONS High frequency switching power supply High frequency power transform Commonly power amplifier circuit SO
s9015 sot-23.pdf
ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors S9015 TRANSISTOR (PNP) FEATURES Complimentary to S9014 MARKING M6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Vo
ss9015.pdf
DIP Type e Transistors SMD Typ PNP Transistors SS9015 Unit mm TO-92 4.8 0.3 3.8 0.3 Features Complementary to SS9014 0.60 Max 0.45 0.1 0.5 2 1 3 1.Emitter 2.Base 1.27 2.54 3.Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current
s9015.pdf
Product specification Silicon Epitaxial Planar Transistor S9015 FEATURES Pb Complementary To S9014. Lead-free Excellent H Linearity. FE Power dissipation.(P =0.2W) C APPLICATIONS Low frequency , low noise amplifier. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9015 M6 SOT-23 none is for Lead Free package; G is for
s9015.pdf
S9015 TRANSISTOR PNP TRANSISTOR PNP TRANSISTOR PNP TRANSISTOR PNP SOT-23 FEATURES Complementary to S9014 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V V Emitter-Base Voltage -5 V EBO I Collector Current -100 mA C P Collector Pow
s9015l s9015h.pdf
R UMW UMW S9015 SOT-23 Plastic-Encapsulate Transistors SOT-23 S9015 TRANSISTOR (PNP) FEATURES 1. BASE Complementary to S9014 2. EMITTER 3. COLLECTOR MARKING M6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -C
s9015.pdf
S9015 SOT-23 PNP Plastic-Encapsulate Transistors FEATURES SOT-23 Complementary to S9014 MARKING M6 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Po
s9015.pdf
S9015 Transistors SOT-23 Plastic-Encapsulate Transistors(PNP) RHOS Features SOT-23 As complementary type the NPN transistor S9014 is recommended Epitaxial planar die construction Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V 1. BASE VCEO Collector-Emitter Voltage -
s9015.pdf
S9015 FEATURES High Collector Current. SOT-23 Complementary to S9014. Excellent hFE Linearity. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -45 V CEO VEBO Emitter-Base Voltage -5 V IC Collector Current -100 mA P Collector Power Dissipation 200 mW C R Thermal Resistance
s9015.pdf
S9 015 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP ) Features SOT- 23 Complementary to S9014 Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V V Collector-Emitter Voltage -45 V CEO C V Emitter-Base Voltage -5 V EBO I Collector Current -100 mA C P Collector Power Dissipation 200 mW C R JA Thermal Resistance From Junction To Ambient 625 /W
s9015.pdf
S9015 NPN Silicon Epitaxial Planar Transistor FEATURES High Collector Current.(IC= 500mA Complementary To S9012. Excellent HFE Linearity. Power dissipation.(PC=300mW) APPLICATIONS High Collector Current. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V
s9015.pdf
S9015 SOT-23 Plastic-Encapsulate Transistors S9015 TRANSISTOR (PNP) SOT-23 FEATURES Complementary To S9014 1. BASE MARKING M6 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -50 V CBO V Collector-Emitter Voltage -45 V CEO VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -10
s9015-ms.pdf
www.msksemi.com S9015-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (PNP) FEATURES 1. BASE Complementary to S9014-MS 2. EMITTER SOT 23 MARKING M6 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V V Collector-Emitter Voltage -45 V CEO V Emitter-Base Voltage -5 V EBO I Collec
s9015 s9015-l s9015-h.pdf
S9015 PNP Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector Complementary to S9014 Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -0.1 A Collector Power Dissipation PC 0.2 W Junction Temperature
s9015-l s9015-h.pdf
Jingdao Microelectronics co.LTD S9015 General Purpose Transistor PNP Silicon FEATURES Complementary to S9014 SOT-23 3 COLLECTOOR 3 1 DEVICE MARKING BASE S9015 = M6 1 2 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO -45 Vdc Collector Base Voltage VCBO -50 Vdc Emitter Base Voltag
s9015.pdf
S901 5 TRANSISTOR(PNP) SOT-23 FEATURES Complementary to S9014 MARKING M6 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.2 W Tj J
s9015-l s9015-h.pdf
S9015 SOT-23 PNP Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector Complementary to S9014 Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage VCEO -45 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -0.1 A Collector Power Dissipation PC 0.2 W Junction Te
s9015.pdf
S9015 SOT-23 Plastic-Encapsulate Transistors S9015 TRANSISTOR (PNP) FEATURES Complimentary to S9014 MARKING M6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - -50 V VCEO Collector-Emitter Voltage -
s9015l s9015h.pdf
S9015 TRANSISTOR (PNP) SOT 323 FEATURES Small Surface Mount Package High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -50 V CBO 2. EMITTER V Collector-Emitter Voltage -45 V CEO 3. COLLECTOR V Emitter-Base Voltage -5 V EBO IC Collector Current -100 mA P Collector Power Dissipati
s9015.pdf
S9015 S9015 S9015 TRANSISTOR(PNP) FEATURES SOT-23 Complementary to S9014 1 BASE 2 EMITTER 3 COLLECTOR MARKING M6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0
s9015l s9015h.pdf
RoHS RoHS COMPLIANT COMPLIANT S9015 PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking M6 Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V -50 Collector-Emitter Voltage V
s9015.pdf
S9015 S9015 PNP Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S9014 Power Dissipation of 200mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any Marking M6 Maximum Ratings & Thermal Characteristics TA = 25 C unl
s9015.pdf
S9015 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to S9014 1 BASE 2 EMITTER 3 COLLECTOR MARKING M6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -0.1 A PC Collector Power Dissipation 0.2 W
s9015.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD S9015 FEATURES Excellent H Linearity H h (-0.1mA)/ h (-2mA)=0.95(Typ.) FE FE FE FE Low Noise NF=1dB(Typ.),10db(Max.). Complementary to S9014 S9014 MAXIMUM RATINGS (Ta=25 ) CHARACTERISTIC Symbol Rating Unit
s9015.pdf
S9015 General Purpose Transistor PNP Silicon FEATURES Complementary to S9015 e A M D e e a C E L1 L HE 1.BASE 2.EMITTER SOT-23 mechanical data 3.COLLECTOR UNIT A C D E HE e M L L1 a Marking max 1.1 0.15 1.4 3.0 2.6 0.5 1.95 0.0 0.55 0.36 mm (ref) (ref) min 0.9 0.08 1.2 2.8 2.2 0.3 1.7 0.15 Type number Marking code max 43 6 55 118 102 20 77 0.0 S9015 M6 22 14 m
s9015.pdf
S9015 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to S9014 Excellent h Linearity FE Surface Mount device MECHANICAL DATA SOT-23 Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit V Collector-Base
s9015.pdf
PNP S9015 S9015 TRANSISTOR (PNP) FEATURES SOT-23 Complementary to S9014 1 BASE 2 EMITTER 3 COLLECTOR MARKING M6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -45 V VEBO Emitter-Base Voltage -5 V IC Collector Cu
s9015l s9015h.pdf
S901 5 Features Complementary to S9014 MARKING M6 SOT-23 A Dim Min Max C A 0.37 0.51 B C B 1.20 1.40 C 2.30 2.50 TOP VIEW B E D 0.89 1.03 D E G E 0.45 0.60 G 1.78 2.05 H H 2.80 3.00 MAXIMUM RATINGS (TA=25 unless otherwise noted) J 0.013 0.10 K Symbol Parameter Value K Units 0.903 1.10 J L VCBO Collector-Base V
Другие транзисторы: S8050, S8550, S9012, S9013, S9013W, S9014, S9014W, S9015, TIP3055, S9018, S9018W, SS8550B, STD123S, SC116, SC117, SC118, SC119
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