SC238. Аналоги и основные параметры
Наименование производителя: SC238
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 170 MHz
Статический коэффициент передачи тока (hFE): 56
Корпус транзистора: SOT23
Аналоги (замена) для SC238
- подборⓘ биполярного транзистора по параметрам
SC238 даташит
0.1. Size:140K toshiba
2sc2383.pdf 
2SC2383 TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2383 Color TV Vertical Deflection Output Applications Unit mm Color TV Class-B Sound Output Applications High breakdown voltage VCEO = 160 V Large continuous collector current capability Recommended for vertical deflection output & sound output applications for line-operated TVs. Complem
0.2. Size:52K fairchild semi
ksc2383.pdf 
KSC2383 Color TV Audio Output & Color TV Vertical Deflection Output TO-92L 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 1 A IB Base Current 0.5 A PC
0.3. Size:75K samsung
ksc2383.pdf 
KSC2383 NPN EPITAXIAL SILICON TRANSISTOR COLOR TV AUDIO OUTPUT TO-92L COLOR TV VERTICAL DEFLECTION OUTPUT ABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current IC 1 A Base Current IB 0.5 A Collector Dissipation PC 900 W Junction Temperature TJ 150 St
0.4. Size:67K rohm
2sc4102 2sc3906k 2sc2389s.pdf 
2SC4102 / 2SC3906K / 2SC2389S Transistors High-voltage Amplifier Transistor (120V, 50mA) 2SC4102 / 2SC3906K / 2SC2389S External dimensions (Unit mm) Features 1) High breakdown voltage. (BVCEO = 120V) 2SC4102 2) Complements the 2SA1579 / 2SA1514K / 2SA1038S. 1.25 Absolute maximum ratings (Ta=25 C) 2.1 Parameter Symbol Limits Unit Collector-base voltage VCBO 120 V C
0.5. Size:268K mcc
2sc2383-r.pdf 
2SC2383-R MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth 2SC2383-O CA 91311 Phone (818) 701-4933 2SC2383-Y Fax (818) 701-4939 Features Capable of 0.9Watts of Power Dissipation. NPN Silicon Collector-current 1.0A Collector-base Voltage 160V Plastic-Encapsulate Operating and storage junction temperature range -55O
0.6. Size:268K mcc
2sc2383-o.pdf 
2SC2383-R MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth 2SC2383-O CA 91311 Phone (818) 701-4933 2SC2383-Y Fax (818) 701-4939 Features Capable of 0.9Watts of Power Dissipation. NPN Silicon Collector-current 1.0A Collector-base Voltage 160V Plastic-Encapsulate Operating and storage junction temperature range -55O
0.7. Size:268K mcc
2sc2383-y.pdf 
2SC2383-R MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth 2SC2383-O CA 91311 Phone (818) 701-4933 2SC2383-Y Fax (818) 701-4939 Features Capable of 0.9Watts of Power Dissipation. NPN Silicon Collector-current 1.0A Collector-base Voltage 160V Plastic-Encapsulate Operating and storage junction temperature range -55O
0.8. Size:769K mcc
2sc2383p.pdf 
2SC2383P Electrical Characteristics @ TA=25 C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V(BR)CBO IC=100 A, IE=0 Collector-Base Breakdown Voltage 160 V V(BR)CEO IC=10mA, IB=0 Collector-Emitter Breakdown Voltage 160 V V(BR)EBO IE=10 A, IC=0 Emitter-Base Breakdown Voltage 6 V ICBO VCB=150V, IE=0 Collector-Base Cutoff Current 1 A IEBO VEB=6V, IC=0
0.9. Size:182K onsemi
ksc2383ota ksc2383yta.pdf 
KSC2383 NPN Epitaxial Silicon Transistor TO-92L 1 1. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSC2383OTA C2383 O- TO-92 3L Ammo KSC2383YTA C2383 Y- TO-92 3L Ammo Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operatin
0.10. Size:282K onsemi
ksc2383.pdf 
NPN Epitaxial Silicon Transistor KSC2383 ABSOLUTE MAXIMUM RATINGS (Values are at TA = 25 C unless otherwise noted.) www.onsemi.com Symbol Parameter Value Unit VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 1 A IB Base Current 0.5 A TO-92 3 LF CASE 135AM TJ Junction Temperature 150 C TSTG Storage Temper
0.11. Size:65K utc
2sc2383.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SC2383 Preliminary NPN EPITAXIAL SILICON TRANSISTOR COLOR TV AUDIO OUTPUT & COLOR TV VERTICAL OUTPUT DESCRIPTION The UTC 2SC2383 is an NPN epitaxial silicon transistor, it uses UTC s advanced technology to provide customers high DC current gain and high breakdown voltage. The UTC 2SC2383 is usually used in Color TV Vertical Deflection Output
0.12. Size:71K secos
2sc2383.pdf 
2SC2383 1A , 160V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 General Purpose Application 1 2 3 B C A CLASSIFICATION OF hFE E E C Product-Rank 2SC2383-O 2SC2383-Y Range 100 200 160 320 B D F G H K Collector PACKAGE INFORMATI
0.13. Size:111K jiangsu
2sc2389s.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92S Plastic-Encapsulate Transistors TO 92S 2SC2389S TRANSISTOR (NPN) 1. EMITTER FEATURES 2. COLLECTOR High Breakdown Voltage. 3. BASE Complements the 2SA1038S. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V
0.14. Size:3737K jiangsu
2sc2383.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors JC T TO-92MOD 2SC2383 TRANSISTOR (NPN) FEATURE 1. EMITTER High Voltage VCEO=160V 2. COLLECTOR Large Continuous Collector Current Capability Complementary to 2SA1013 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base
0.15. Size:260K lge
2sc2383 to-92l.pdf 
2SC2383 TO-92L Transistor (NPN) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.100 1 Features 7.800 8.200 High voltage VCEO=160V 0.600 0.800 Large continuous collector current capability Complementary to 2SA1013 0.350 0.550 13.800 14.200 1.270 TYP Dimensions in inches and (millimeters) 2.440 MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.640 0.
0.16. Size:290K lge
2sc2383.pdf 
2SC2383 TO-92MOD Transistor (NPN) TO-92MOD 1. EMITTER 1 2. COLLECTOR 2 3 3. BASE 5.800 Features 6.200 High voltage VCEO=160V 8.400 8.800 Large continuous collector current capability 0.900 Complementary to 2SA1013 1.100 0.400 0.600 13.800 14.200 1.500 TYP 2.900 Dimensions in inches and (millimeters) 3.100 MAXIMUM RATINGS (TA=25 unless otherwis
0.19. Size:1180K kexin
2sc2383.pdf 
SMD Type Transistors NPN Transistors 2SC2383 1.70 0.1 Features High voltage VCEO=160V Large continuous collector current capability 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 160 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage VEBO 6 Collector
0.20. Size:3615K slkor
2sc2383-o 2sc2383-y.pdf 
2SC2383 NPN Transistors Features Excellent h characteristics FE 3 2 1.Base 1 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Value Unit Collector Base Voltage VCBO 160 V Collector Emitter Voltage VCEO 160 V Emitter Base Voltage VEBO 6 V Collector Current IC 1 A Base Current IB 0.5 A Collector Power
0.21. Size:431K cn yfw
2sc2383-o 2sc2383-y.pdf 
2SC2383 SOT-89 NPN Transistors 3 Features 2 Small Flat Package 1.Base 1 General Purpose Application 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Ratings Unit Collector-Base Voltage VCBO 160 V Collector-Emitter Voltage VCEO 160 V Emitter-Base Voltage VEBO 6 V Collector Current-Continuous IC 1
0.22. Size:175K inchange semiconductor
2sc2383.pdf 
INCHANGE Semiconductor isc Silicon NPN Pow Transistor 2SC2383 DESCRIPTION High breakdown voltage Low output capacitance Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV class B sound output applications Color TV vert.deflection output applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col
Другие транзисторы: SC116, SC117, SC118, SC119, SC206, SC207, SC236, SC237, S9014, SC239, SC307, SC308, SC309, SCE237, SCE238, SCE239, SCE307
