SD168. Аналоги и основные параметры
Наименование производителя: SD168
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 12.5 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 300 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Электрические характеристики
Статический коэффициент передачи тока (hFE): 7.5
Корпус транзистора: TO3
Аналоги (замена) для SD168
- подборⓘ биполярного транзистора по параметрам
SD168 даташит
0.1. Size:98K st
sd1680.pdf 
SD1680 RF & MICROWAVE TRANSISTORS 800/900 MHz APPLICATIONS .915 - 960 MHz .24 VOLTS .CLASS AB PUSH PULL .INTERNAL INPUT MATCHING .DESIGNED FOR HIGH POWER LINEAR OPERATION .HIGH SATURATED POWER CAPABILITY 2 x .437 x .450 2LFL (M175) .GOLD METALLIZATION FOR HIGH epoxy sealed RELIABILITY ORDER CODE BRANDING .DIFFUSED EMITTER BALLAST SD1680 SD1680 RESISTORS .COMMON EMITTER CONFIGU
0.2. Size:146K sanyo
2sd1683.pdf 
Ordering number 2063A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1143/2SD1683 50V/4A Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2042A [2SB1143/2SD1683] Features Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. B Base C C
0.3. Size:60K sanyo
2sb1143 2sd1683.pdf 
Ordering number ENN2063A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1143/2SD1683 50V/4A Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2042B [2SB1143/2SD1683] Features 8.0 4.0 3.3 Adoption of FBET, MBIT processes. 1.0 1.0 Low saturation voltage. Large current capacity and
0.4. Size:146K sanyo
2sd1684.pdf 
Ordering number 2041A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1144/2SD1684 100V/1.5A Switching Applications Features Package Dimensions Adoption of FBET and MBIT processes. unit mm High breakdown voltage. 2042B Low saturation voltage. [2SB1144/2SD1684] Plastic-covered heat sink facilitating high-density mounting. 1 Emitter 2 Collector 3 Base ( ) 2
0.5. Size:133K sanyo
2sd1681.pdf 
Ordering number 2020A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1141/2SD1681 18V/1.2A Switching Applications Applications Package Dimensions Converters, relay drivers, low-voltage and high unit mm power AF Amplifier. 2042A [2SB1141/2SD1681] Features Low saturation voltage and excellent linearity of hFE. Wide ASO. B Base C Collector E Emitter ( ) 2SB1141
0.6. Size:113K sanyo
2sd1685.pdf 
Ordering number EN2042A NPN Epitaxial Planar Silicon Transistor 2SD1685 20V/5A Switching Applications Applications Package Dimensions Strobe, voltage regulators, relay drivers, lamp unit mm drivers. 2042B [2SD1685] 8.0 Features 4.0 3.3 1.0 1.0 Low saturation voltage. Large current capacity. 3.0 Fast switching time. No insulator required when mounting becau
0.7. Size:149K sanyo
2sd1682.pdf 
Ordering number 2060A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1142/2SD1682 50V/2.5A High-Speed Switching Applications Applications Package Dimensions Power supplies, relay drivers, lamp drivers. unit mm 2042A Features [2SB1142/2SD1682] Adoption of FBET, MBIT processes. Low saturation voltage. Large current capacity and wide ASO. B Base C Collector ( )
0.8. Size:213K inchange semiconductor
2sd1683.pdf 
isc Silicon NPN Power Transistor 2SD1683 DESCRIPTION High Collector Current-I = 4A C Low Saturation Voltage - V = 0.5V(Max)@ I = 2A CE(sat) C Complement to Type 2SB1143 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in voltage regulations, relay drivers, lamp drivers and electrical equipment. ABSOLUTE MAX
0.9. Size:212K inchange semiconductor
2sd1684.pdf 
isc Silicon NPN Power Transistor 2SD1684 DESCRIPTION Collector Saturation Voltage Low V = -0.5V(Max)@I = -0.5A CE(sat) C Wide Area of Safe Operation Complement to Type 2SB1144 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for 100V/1.5A Switching Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
0.10. Size:208K inchange semiconductor
2sd1680.pdf 
isc Silicon NPN Power Transistor 2SD1680 DESCRIPTION Collector-Base Breakdown Voltage- V = 330V(Min) (BR)CBO High Power Dissipation High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V
Другие транзисторы: SCE308, SCE309, SCE535, SCE536, SCE537, SCE538, SCE539, SCE540, TIP127, SD335, SD336, SD337, SD338, SD339, SD340, SD345, SD346
