SD602. Аналоги и основные параметры
Наименование производителя: SD602
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 10 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 2 MHz
Статический коэффициент передачи тока (hFE): 20
Корпус транзистора: TO3
Аналоги (замена) для SD602
- подборⓘ биполярного транзистора по параметрам
SD602 даташит
0.1. Size:111K motorola
msd602-r.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MSD602 RT1/D NPN General Purpose Amplifier MSD602-RT1 Transistor Surface Mount COLLECTOR Motorola Preferred Device 3 3 2 2 1 1 BASE EMITTER MAXIMUM RATINGS (TA = 25 C) Rating Symbol Value Unit CASE 318D 03, STYLE 1 SC 59 Collector Base Voltage V(BR)CBO 60 Vdc Collector Emitter Voltage V(BR)CEO 50 Vdc Emi
0.2. Size:42K onsemi
msd602-rt1-d.pdf 

MSD602-RT1 Preferred Device NPN General Purpose Amplifier Transistor Surface Mount Features http //onsemi.com Pb-Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS (TA = 25 C) Rating Symbol Value Unit Collector-Base Voltage V(BR)CBO 60 Vdc Collector-Emitter Voltage V(BR)CEO 50 Vdc Emitter-Base Voltage V(BR)EBO 7.0 Vdc 2 1 Collector Current - Continuous IC 500 mAdc BA
0.3. Size:87K onsemi
msd602-rt1.pdf 

MSD602-RT1G, SMSD602-RT1G Preferred Device NPN General Purpose Amplifier Transistor Surface Mount http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique SC-59 Site and Control Change Requirements CASE 318D These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS STYLE 1 Compliant* COLLECTOR
0.4. Size:58K onsemi
msd602-rt1g.pdf 

MSD602-RT1G NPN General Purpose Amplifier Transistor Surface Mount Features http //onsemi.com S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS SC-59 Compliant* CASE 318D STYLE 1 MAXIMUM RATINGS (TA = 25 C) COLLECTOR Ratin
0.5. Size:44K panasonic
2sd602 e.pdf 

Transistor 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB710 and 2SB710A +0.2 Features 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 pack
0.6. Size:40K panasonic
2sd602.pdf 

Transistor 2SD602, 2SD602A Silicon NPN epitaxial planer type For general amplification Unit mm Complementary to 2SB710 and 2SB710A +0.2 Features 2.8 0.3 +0.25 0.65 0.15 1.5 0.05 0.65 0.15 Low collector to emitter saturation voltage VCE(sat). Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine 1 pack
0.7. Size:1177K secos
2sd602,602a.pdf 

2SD602 / 2SD602A NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE Low collector to emitter saturation voltage VCE(sat) A L 3 3 Top View CLASSIFICATION OF hFE (1) C B 1 1 2 Product-Rank 2SD602-Q 2SD602-R 2SD602-S 2 K E Range 85 170 120 240 170 340 D Marking Code WQ
0.8. Size:696K jiangsu
2sd602a.pdf 

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD602A TRANSISTOR (NPN) SOT 23 FEATURES Low Collector to Emitter Saturation Voltage Mini Type Package 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50
0.9. Size:429K htsemi
2sd602a.pdf 

2SD602A TRANSISTOR (NPN) SOT 23 FEATURES Low Collector to Emitter Saturation Voltage Mini Type Package 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 60 V CBO V Collector-Emitter Voltage 50 V CEO V Emitter-Base Voltage 5 V EBO IC Collector Current 500 mA PC Collector
0.10. Size:453K htsemi
2sd602.pdf 

2SD602 TRANSISTOR (NPN) SOT 23 FEATURES Low Collector to Emitter Saturation Voltage Mini Type Package 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 30 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 5 V EBO IC Collector Current 500 mA PC Collector P
0.11. Size:713K blue-rocket-elect
2sd602.pdf 

2SD602(BR3DG602M) 2SD602A(BR3DG602AM) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 2SB710(BR3CG710M),2SB710A(BR3CG710AM) Complementary pair with 2SB710(BR3CG710M),2SB710A(BR3CG710AM) / Applications General
0.12. Size:352K kexin
2sd602a.pdf 

SMD Type Transistors NPN Transistors 2SD602A SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Low Collector to Emitter Saturation Voltage Mini Type Package 1 2 Complimentary to 2SB710A +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Volt
0.13. Size:59K wej
2sd602lt1.pdf 

RoHS 2SD602LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907ALT1 * Collector Dissipation Pc(max)=225mW * Collector-Emitter Voltage Vceo= 40V ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit 1. 1.GATE Collector-Base Voltage Vcbo 75 V 2.SOURCER 2.4 3.DRAIE 1.3 Collector-Emitter Voltage Vceo 40 V Emitter-Base V
Другие транзисторы: SD455, SD456, SD457, SD458, SD459, SD460, SD600, SD601, 2SC828, SD802, SD812, SF016, SF018, SF116, SF117, SF118, SF119