MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MSD602RT1/DNPN General Purpose AmplifierMSD602-RT1Transistor Surface MountCOLLECTORMotorola Preferred Device3322 11BASE EMITTERMAXIMUM RATINGS (TA = 25C)Rating Symbol Value Unit CASE 318D03, STYLE 1SC59CollectorBase Voltage V(BR)CBO 60 VdcCollectorEmitter Voltage V(BR)CEO 50 VdcEmi

MSD602-RT1Preferred Device NPN General PurposeAmplifier TransistorSurface MountFeatureshttp://onsemi.com Pb-Free Packages are AvailableCOLLECTOR3MAXIMUM RATINGS (TA = 25C)Rating Symbol Value UnitCollector-Base Voltage V(BR)CBO 60 VdcCollector-Emitter Voltage V(BR)CEO 50 VdcEmitter-Base Voltage V(BR)EBO 7.0 Vdc2 1Collector Current - Continuous IC 500 mAdcBA

MSD602-RT1G,SMSD602-RT1GPreferred Device NPN General PurposeAmplifier TransistorSurface Mounthttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring UniqueSC-59Site and Control Change RequirementsCASE 318D These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSTYLE 1Compliant*COLLECTOR

MSD602-RT1GNPN General PurposeAmplifier TransistorSurface MountFeatureshttp://onsemi.com S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements; AEC-Q101 Qualified andPPAP Capable These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSSC-59Compliant*CASE 318DSTYLE 1MAXIMUM RATINGS (TA = 25C)COLLECTORRatin

Transistor2SD602, 2SD602ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB710 and 2SB710A+0.2Features2.8 0.3+0.25 0.65 0.15 1.5 0.05 0.65 0.15Low collector to emitter saturation voltage VCE(sat).Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine1pack

Transistor2SD602, 2SD602ASilicon NPN epitaxial planer typeFor general amplificationUnit: mmComplementary to 2SB710 and 2SB710A+0.2Features2.8 0.3+0.25 0.65 0.15 1.5 0.05 0.65 0.15Low collector to emitter saturation voltage VCE(sat).Mini type package, allowing downsizing of the equipment andautomatic insertion through the tape packing and the magazine1pack

2SD602 / 2SD602A NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE Low collector to emitter saturation voltage VCE(sat) AL33Top ViewCLASSIFICATION OF hFE (1) C B11 2Product-Rank 2SD602-Q 2SD602-R 2SD602-S 2K ERange 85~170 120~240 170~340 DMarking Code WQ

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SD602A TRANSISTOR (NPN)SOT23 FEATURES Low Collector to Emitter Saturation Voltage Mini Type Package1. BASEMAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTERSymbol Parameter Value Unit 3. COLLECTORV Collector-Base Voltage 60 V CBOV Collector-Emitter Voltage 50

2SD602ATRANSISTOR (NPN)SOT23 FEATURES Low Collector to Emitter Saturation Voltage Mini Type Package 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 60 V CBOV Collector-Emitter Voltage 50 V CEOV Emitter-Base Voltage 5 V EBOIC Collector Current 500 mA PC Collector

2SD602TRANSISTOR (NPN)SOT23 FEATURES Low Collector to Emitter Saturation Voltage Mini Type Package 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 30 V CBOV Collector-Emitter Voltage 25 V CEOV Emitter-Base Voltage 5 V EBOIC Collector Current 500 mA PC Collector P

2SD602(BR3DG602M) 2SD602A(BR3DG602AM) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features 2SB710(BR3CG710M),2SB710A(BR3CG710AM)Complementary pair with 2SB710(BR3CG710M),2SB710A(BR3CG710AM) / Applications General

SMD Type TransistorsNPN Transistors2SD602ASOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Low Collector to Emitter Saturation Voltage Mini Type Package1 2 Complimentary to 2SB710A+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Volt

RoHS 2SD602LT1 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE TRANSISTOR * Complement to MMBT2907ALT1 * Collector Dissipation: Pc(max)=225mW * Collector-Emitter Voltage :Vceo= 40V ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit1.1.GATECollector-Base Voltage Vcbo 75 V 2.SOURCER2.43.DRAIE1.3Collector-Emitter Voltage Vceo 40 V Emitter-Base V