2SD2098 / 2SD2118 / 2SD2097TransistorsLow VCE(sat) transistor (strobe flash)2SD2098 / 2SD2118 / 2SD2097 External dimensions (Units : mm) Features1) Low VCE(sat).2SD2098+0.2VCE(sat) = 0.25V (Typ.) 4.5-0.1+0.21.51.60.1 -0.1(IC/IB = 4A / 0.1A)2) Excellent DC current gain characteristics.3) Complements the 2SB1386 / 2SB1412 / 2SB1326.(1) (2) (3)0.4+0.1-0.05

2SD2118 5A , 50V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES D-Pack (TO-252) Low VCE(sat). VCE(sat) = 0.25V(Typ.) (IC/IB = 4A / 0.1A) Excellent DC Current Gain Characteristics CLASSIFICATION OF hFE Product-Rank 2SD2118-Q 2SD2118-R ACBDRange 120~270 180~390 G E

2SD2118(NPN) TO-251/TO-252-2L TransistorTO-2511.BASE 2.COLLECTOR 3.EMITTER 1 2 3 FeaturesLow VCE(sat). VCE(sat) = 0.25V (Typ.)(IC/IB = 4A / 0.1A) Excellent DC current gain characteristics. TO-252-2LMAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD2118DESCRIPTIONHigh current capacitySmall and slim package making it easy to make 2SD2118-used set smallerLow collector-to-emitter saturation voltageFast switching speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSStrobes,voltage regu

Ordering number:EN3204NPN Epitaxial Planar Silicon Transistor2SD2117General Driver ApplicationsFeatures Package Dimensions Darlington connection.unit:mm High DC current gain.2064A Large current capacity, wide ASO.[2SD2117]2.51.456.9 1.00.60.9 0.51 2 30.451 : Emitter2 : Collector3 : Base2.54 2.54SANYO : NMPSpecificationsAbsolute Maximum Ra

Ordering number:EN3203NPN Epitaxial Planar Silicon Transistor2SD2116General Driver ApplicationsFeatures Package Dimensions Darlington connection.unit:mm High DC current gain.2064A Large current capacity, wide ASO.[2SD2116]2.51.456.9 1.00.60.9 0.51 2 30.451 : Emitter2 : Collector3 : Base2.54 2.54SANYO : NMPSpecificationsAbsolute Maximum Ra

High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K Features Dimensions (Unit : mm) 1) High DC current gain. 2SD2114K2.90.21.1+0.2 hFE = 1200 (Typ.) 1.90.2 -0.10.80.10.95 0.952) High emitter-base voltage. (1) (2) VEBO =12V (Min.) 00.13) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (3) (IC / IB = 500mA / 20mA) +0.10.15-0.06+0.10.4-0

TransistorsHigh-current Gain Medium Power Transistor (20V, 0.5A)2SD2114K / 2SD2144SFFeatures FExternal dimensions (Units: mm)1) High DC current gain.hFE = 1200 (Typ.)2) High emitter-base voltage.VEBO = 12V (Min.)3) Low VCE(sat).VCE(sat) = 0.18V (Typ.)(IC / IB = 500mA / 20mA)FStructureEpitaxial planar typeNPN silicon transistor(96-232-C107)232Transistors 2SD211

2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S External dimensions (Unit : mm) Features 1) High DC current gain. 2SD2114K2.90.21.1+0.21.90.2 -0.1 hFE = 1200 (Typ.) 0.80.10.95 0.952) High emitter-base voltage. (1) (2)00.1 VEBO =12V (Min.) 3) Low VCE (sat). (3)+0.1 VCE (sat) = 0.18V (Ty

2SD2114K / 2SD2144S Transistors High-current Gain Medium Power Transistor (20V, 0.5A) 2SD2114K / 2SD2144S External dimensions (Unit : mm) Features 1) High DC current gain. 2SD2114K2.90.21.1+0.21.90.2 -0.1 hFE = 1200 (Typ.) 0.80.10.95 0.952) High emitter-base voltage. (1) (2)00.1 VEBO =12V (Min.) 3) Low VCE (sat). (3)+0.1 VCE (sat) = 0.18V (Ty

2SD2115(L)/(S)Silicon NPN Epitaxial PlanarApplicationLow frequency power amplifierOutlineDPAK44121. Base3 2. Collector3. EmitterS Type 124. Collector3L TypeAbsolute Maximum Ratings (Ta = 25C)Item Symbol Rating UnitCollector to base voltage VCBO 150 VCollector to emitter voltage VCEO 60 VEmitter to base voltage VEBO 5VCollector current IC 2AColle

2SD2114 0.5A , 25V NPN Plastic-Encapsulate Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE High DC Current Gain. AL High Emitter-Base Voltage. VEBO=12V (Min.) 33Top View C BCLASSIFICATION OF hFE 11 22K EProduct-Rank 2SD2114-V 2SD2114-W Range 820~1800 1200~2700 DMarking BBV

2SD2114TRANSISTOR (NPN)FEATURES SOT-23 High DC current gain. High emitter-base voltage. Low VCE (sat). MARKING: BBV,BBW 1. BASE 2.EMITTER MAXIMUM RATINGS (TA=25 unless otherwise noted) 3.COLLECTOR Symbol Parameter Value UnitsVCBO Collector-Base Voltage 25 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 12 V IC Collector Current -Continuou

2SD2114 SOT-23 Transistor(NPN)1. BASE SOT-232.EMITTER 3.COLLECTOR Features High DC current gain. hFE = 1200 (Typ.) High emitter-base voltage. VEBO =12V (Min.) Low VCE (sat). VCE (sat) = 0.18V (Typ.) (IC/IB=500mA / 20mA) MARKING: BBV,BBW MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Collec

LESHAN RADIO COMPANY, LTD.Epitaxial planar typeNPN silicon transistorL2SD2114KVLT1G Series FeaturesS-L2SD2114KVLT1G Series1) High DC current gain.hFE = 1200 (Typ.)2) High emitter-base voltage.3VEBO =12V (Min.)3) Low VCE (sat).1VCE (sat) = 0.18V (Typ.)2(IC / IB = 500mA / 20mA)4) We declare that the material of product compliance with RoHS requirements.SOT 2

LESHAN RADIO COMPANY, LTD.Epitaxial planar typeNPN silicon transistor L2SD2114KVLT1G Series Features S-L2SD2114KVLT1G Series1) High DC current gain.hFE = 1200 (Typ.)32) High emitter-base voltage.VEBO =12V (Min.)3) Low VCE (sat). 1VCE (sat) = 0.18V (Typ.)2(IC / IB = 500mA / 20mA)4) We declare that the material of product compliance with RoHS requirements.SOT 23 (TO

SMD Type TransistorsNPN Transistors2SD2114SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=500mACollector Collector Emitter Voltage VCEO=20V 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1Base1.Base2.EmitterEmitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Ba

isc Silicon NPN Darlington Power Transistor 2SD2112DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 3ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 3A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low f

isc Silicon NPN Darlington Power Transistor 2SD2113DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 1.5ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 1.5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for l

isc Silicon NPN Darlington Power Transistor 2SD2111DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 120V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 1.5ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 1.5A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for l

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2SD211DESCRIPTIONExcellent Safe Operating AreaCollector-Emitter Sustaining Voltage-: V = 40V(Min.)CEO(SUS)Low Collector Saturation Voltage-High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high power amplifier and switching applic

isc Silicon NPN Darlington Power Transistor 2SD2110DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = 80V(Min)(BR)CEOCollector-Emitter Saturation Voltage-: V = 1.5V(Max) @I = 2ACE(sat) CHigh DC Current Gain: h = 1000(Min) @ I = 2A, V = 3VFE C CEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low fr