BCP5551NPN EpitaxialElektronische BauelementePlanar TransistorRoHS Compliant ProductSOT-89 FeaturesDesigned for gereral prupose application requiringhigh breakdown voltage.1231.BASE2.COLLECTOR3.EMITTERREF. REF. Min. Max. Min. Max. A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. Marking:5551C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 XXXXE 2.40 2

BC637; BCP55; BCX5560 V, 1 A NPN medium power transistorsRev. 07 25 June 2007 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series.Table 1. Product overviewType number[1] Package PNP complementNXP JEITA JEDECBC637[2] SOT54 SC-43A TO-92 BC638BCP55 SOT223 SC-73 - BCP52BCX55 SOT89 SC-62 TO-243 BCX52[1] Valid for all available sel

DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D087BCP54; BCP55; BCP56NPN medium power transistors1999 Apr 08Product specificationSupersedes data of 1997 Apr 08Philips Semiconductors Product specificationNPN medium power transistors BCP54; BCP55; BCP56FEATURES PINNING High current (max. 1 A)PIN DESCRIPTION Low voltage (max. 80 V).1 base2, 4 collectorAP

BCP55/56MEDIUM POWER AMPLIFIERADVANCE DATA SILICON EPITAXIAL PLANAR NPNTRANSISTORS MINIATURE PLASTIC PACKAGE FORAPPLICATION IN SURFACE MOUNTINGCIRCUITS GENERAL PURPOSE MAINLY INTENDED2FOR USE IN MEDIUM POWER INDUSTRIALAPPLICATION AND FOR AUDIO AMPLIFIER3OUTPUT STAGE2 PNP COMPLEMENTS ARE BCP52 AND1BCP53 RESPECTIVELYSOT-223INTERNAL SCHEMATIC DIAGRAMABSOLUTE

BCP55-16LOW POWER NPN TRANSISTOROrdering Code MarkingBCP55-16 BCP5516 SILICON EPITAXIAL PLANAR NPN MEDIUMVOLTAGE TRANSISTOR SOT-223 PLASTIC PACKAGE FOR2SURFACE MOUNTING CIRCUITS TAPE AND REEL PACKING3 THE PNP COMPLEMENTARY TYPE IS2BCP52-161APPLICATIONS SOT-223 MEDIUM VOLTAGE LOAD SWITCHTRANSISTORS OUTPUT STAGE FOR AUDIO AMPLIFIERSCIRCUITS AUTOMOTIVE

BCP55CECBSOT-223NPN General Purpose AmplifierThis device is designed for general purpose medium poweramplifiers and switching circuits requiring collector currentsto 1.0 A. Sourced from Process 38. See BCP54 for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsV Collector-Emitter Voltage 60 VCEOV Collector-Base Vo

BCP55T series60 V, 1 A NPN medium power transistorsRev. 1 29 April 2019 Product data sheet1. Product profile1.1. General descriptionNPN medium power transistors in a medium power SOT223 (SC73) Surface-Mounted Device(SMD) plastic package.Table 1. Product overviewType number Package NPN comlementNexperia JEDECBCP55T SOT223 SC-73 BCP52TBCP55-10T BCP52-10TBCP55-16T BCP52

BCP55; BCX55; BC55PA60 V, 1 A NPN medium power transistorsRev. 8 24 October 2011 Product data sheet1. Product profile1.1 General descriptionNPN medium power transistor series in Surface-Mounted Device (SMD) plastic packages.Table 1. Product overviewType number[1] Package PNP complementNexperia JEITA JEDECBCP55 SOT223 SC-73 - BCP52BCX55 SOT89 SC-62 TO-243 BCX52BC55PA SO

BCP 54M ... BCP 56MNPN Silicon AF Transistors4 For AF driver and output stages5 High collector current Low collector-emitter saturation voltage3 Complementary types: BCP 51M...BCP 53M(PNP)21VPW05980Type Marking Ordering Code Pin Configuration PackageBCP 54M BAs Q62702-C2595 1 = B 2 = C 3 = E 4 n.c. 5 = C SCT-595BCP 55M BEs Q62702-C2606 BCP 56M BHs Q6270

NPN Silicon AF Transistors BCP 54 ... BCP 56 For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP 51 BCP 53 (PNP)Type Marking Ordering Code Pin Configuration Package1)(tape and reel) 1 2 3 4BCP 54 BCP 54 Q62702-C2117 B C E C SOT-223BCP 54-10 BCP 54-10 Q62702-C2119BCP 54-16 BCP 54-16 Q62702-C2120BCP 55

BCP 54/ 55/ 56 NPN MEDIUM POWER TRANSISTORS IN SOT223 Features Mechanical Data BVCEO > 45V, 60V & 80V Case: SOT223 IC = 1A High Continuous Collector Current Case Material: Molded Plastic. Green Molding Compound; ICM = 2A Peak Pulse Current UL Flammability Rating 94V-0 2W Power Dissipation Moisture Sensitivity: Level 1 per J-STD-020 Low Saturat

SOT223 NPN SILICON PLANARBCP55MEDIUM POWER TRANSISTORISSUE 3 AUGUST 1995 T i I i C i II V T T EC T I D T I BABSOLUTE MAXIMUM RATINGS. T V IT II V I V V II i V I V V i V I V V I I i II I Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I T IT DITI II V V I V I II i V V I V I i

BCP54...-BCP56...NPN Silicon AF Transistors For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP51...BCP53 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBCP54 * 1=B 2=C 3=E 4=C - - SOT223 BCP54-16 * 1=B 2=C 3=E 4=C - - SOT223 BCP5

BCP55-10,BCP55-16Features Complementary Types: BCP52 (PNP) Halogen Free. Green Device (Note 1)NPN Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPlastic-Encapsulate Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) TransistorsMaximum Ratings @ 25C Unless Otherwise SpecifiedSOT

M C CR BCP54-10/16HE3Micro Commercial Components Micro Commercial Components BCP55-10/16HE3130 W Cochran St, Unit BSimi Valley, CA 93065Tel:818-701-4933 BCP56-10/16HE3Features For AF driver and output stagesNPN High collector current Low collector-emitter saturation voltage Plastic-Encapsulate Complementary types: BCP51 ... BCP53 (PNP)Transistors L

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR EPITAXIAL TRANSISTORS BCP54 BCP55 BCP56SOT-223Formed SMD PackageGeneral Purpose Medium Power DC ApplicationsComplementary BCP51 BCP52 and BCP53ABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL BCP54 BCP55 BCP56 UNITSCollector Base Voltage V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-223 Plastic-Encapsulate Transistors SOT-223 BCP54,55,56 TRANSISTOR (NPN) FEATURES For AF driver and output stages 1. BASE High collector current 2. COLLECTOR Low collector-emitter saturation voltage 3. EMITTER Complementary types: BCP51 ... BCP53 (PNP) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Sy

BCP54,55,56SOT-223 Transistor(NPN)SOT-2231. BASE 2. COLLECTOR 1 3. EMITTER Features For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types: BCP51 ... BCP53 (PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter BCP54 BCP55 BCP56 Units VCBO Col

BCP54-BCP56 TRANSISTOR (NPN) SOT-223 1 FEATURES For AF driver and output stages 1. BASE High collector current 2. COLLECTOR Low collector-emitter saturation voltage 3. EMITTER Complementary types: BCP51 ... BCP53 (PNP) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter BCP54 BCP55 BCP56 UnitsVCBO Collector-Base Voltage 45 60 100 V VCEO Collec

www.msksemi.comBCP54 BCP55 BCP56Semiconductor CompianceSemiconductor Compiance BCP54,55,56 TRANSISTOR (NPN) SOT-223 FEATURES For AF driver and output stages 11. BASE High collector current 22. COLLECTOR Low collector-emitter saturation voltage 33. EMITTER Complementary types: BCP51 ... BCP53 (PNP) MAXIMUM RATINGS (Ta=25 unless otherwise noted) Sym