JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126 Plastic-Encapsulate Transistors BD034 TRANSISTOR (PNP) TO 126 FEATURES 1. EMITTER High Transition Frequency High Collector Current 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -110 V VCEO Collector-Emitter Voltage -95 V V

BD034(3CA034) PNP /SILICON PNP TRANSISTOR Purpose: Medium power amplifier applications. /Absolute Maximum Ratings(Ta=25) Symbol Rating Unit V -110 V CBO V -80 V CEO V -7.0 V EBO I -2.5 A CP 1.25 W CT 150 j T -55150 stg /Electrical C

BD034L(BR3CG034L) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features IC VCBO High Collector current, high Collector-base voltage. / Applications Power dissipation. / Equivalent Circuit