Справочник транзисторов. BC846BDW

 

Биполярный транзистор BC846BDW - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BC846BDW
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.38 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 65 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 4.5 pf
   Статический коэффициент передачи тока (hfe): 200
   Корпус транзистора: SOT-363

 Аналоги (замена) для BC846BDW

 

 

BC846BDW Datasheet (PDF)

 ..1. Size:101K  wietron
bc846bdw bc847 bc848.pdf

BC846BDW
BC846BDW

BC846BDW SeriesGeneral Purpose Transistor2 13654NPN Duals12P b Lead(Pb)-Free345 6SOT-363(SC-88)NPN+NPNMaximum RatingsBC846 BC847Rating Symbol BC848Unit65 45Collector-Emitter Voltage V 30CEO Vdc80 50Collector-Base Voltage VCBO 30Vdc6.0Emitter-Base Voltage VEBO 6.0 5.0VdcCollector Current-Continuous IC 100 100100 mAdcThermal Characteri

 0.1. Size:218K  onsemi
bc846bdw1t1g bc847bdw1t1g bc847cdw1t1g bc848cdw1t1g.pdf

BC846BDW
BC846BDW

DATA SHEETwww.onsemi.comDual General PurposeTransistorsSOT-363/SC-88CASE 419BNPN DualsSTYLE 1BC846BDW1, BC847BDW1,(3) (2) (1)BC848CDW1These transistors are designed for general purpose amplifierQ1 Q2applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(4) (5) (6)Features S and NSV Prefixes for Automotiv

 0.2. Size:144K  onsemi
sbc846bdw1t1g.pdf

BC846BDW
BC846BDW

BC846BDW1T1G,SBC846BDW1T1G,BC847BDW1T1G,SBC847BDW1T1G Series,NSVBC847BDW1T2G,BC848CDW1T1Ghttp://onsemi.comDual General PurposeTransistorsSOT-363CASE 419BNPN DualsSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applications.FeaturesQ1 Q

 0.3. Size:144K  onsemi
bc847bdw1t3g bc846bdw1t1g.pdf

BC846BDW
BC846BDW

BC846BDW1T1G,SBC846BDW1T1G,BC847BDW1T1G,SBC847BDW1T1G Series,NSVBC847BDW1T2G,BC848CDW1T1Ghttp://onsemi.comDual General PurposeTransistorsSOT-363CASE 419BNPN DualsSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applications.FeaturesQ1 Q

 0.4. Size:229K  onsemi
bc846bdw1 bc847bdw1 bc848cdw1.pdf

BC846BDW
BC846BDW

Dual General PurposeTransistorsNPN DualsBC846BDW1, BC847BDW1,BC848CDW1www.onsemi.comThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.FeaturesSOT-363/SC-88 S and NSV Prefixes for Automotive and Other ApplicationsCASE 419BSTYLE 1Requiring Unique Si

 0.5. Size:127K  onsemi
bc846bdw1t1g bc847bdw1t1g bc848cdw1t1g.pdf

BC846BDW
BC846BDW

BC846BDW1T1G,BC847BDW1T1G,BC848CDW1T1GDual General PurposeTransistorshttp://onsemi.comNPN Duals(3) (2) (1)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.Q1 Q2Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS(4) (5) (6)Com

 0.6. Size:209K  lrc
lbc846bdw1t1g lbc846bdw1t3g lbc847bdw1t1g lbc847bdw1t3g lbc847cdw1t1g lbc847cdw1t3g lbc848bdw1t1g lbc848bdw1t3g lbc848cdw1t1g lbc848cdw1t3g lbc846adw1t1g lbc846adw1t3g.pdf

BC846BDW
BC846BDW

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN DualsLBC846ADW1T1G These transistors are designed for general purpose amplifierLBC846BDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.LBC847BDW1T1GWe declare that the material of product compliance with LBC847CDW1T1GRoHS requirements.LBC848

 0.7. Size:228K  lrc
lbc846bdw1t1g.pdf

BC846BDW
BC846BDW

LESHAN RADIO COMPANY, LTD.LBC846ADW1T1GDual General Purpose TransistorsLBC846BDW1T1GNPN DualsLBC847BDW1T1G These transistors are designed for general purpose amplifier LBC847CDW1T1GLBC848BDW1T1Gapplications. They are housed in the SOT363/SC88 which isLBC848CDW1T1Gdesigned for low power surface mount applications.S-LBC846ADW1T1GWe declare that the material of produc

 0.8. Size:440K  lrc
lbc846bdw1t1g lbc846bdw1t3g.pdf

BC846BDW

 0.9. Size:209K  lrc
lbc846bdw1t1g lbc847bdw1t1g lbc847cdw1t1g lbc848bdw1t1g lbc848cdw1t1g lbc846adw1t1g.pdf

BC846BDW
BC846BDW

LESHAN RADIO COMPANY, LTD.Dual General Purpose TransistorsNPN DualsLBC846ADW1T1G These transistors are designed for general purpose amplifierLBC846BDW1T1Gapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.LBC847BDW1T1GWe declare that the material of product compliance with LBC847CDW1T1GRoHS requirements.LBC848

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