Биполярный транзистор BC856BDW
Даташит. Аналоги
Наименование производителя: BC856BDW
Маркировка: 3B
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.38
W
Макcимально допустимое напряжение коллектор-база (Ucb): 80
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 65
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 100
MHz
Ёмкость коллекторного перехода (Cc): 4.5
pf
Статический коэффициент передачи тока (hfe): 220
Корпус транзистора:
SOT-363
Аналог (замена) для BC856BDW
-
подбор ⓘ биполярного транзистора по параметрам
BC856BDW
Datasheet (PDF)
..1. Size:1005K wietron
bc856bdw bc857 bc858.pdf 

BC856BDW SeriesPNP Dual General Purpose Transistors2 13P b Lead(Pb)-Free65412345 6PNP+PNPSOT-363(SC-88)Maximum RatingsRating Symbol BC856 BC857 BC858 Unit65 45 30Collector-Emitter Voltage VCEOV80 50 30Collector-Base Voltage VCBOV5.0 5.0 5.0Emitter-Base Voltage VEBOVCollector Current-Continuous IC 100 100100 mAThermal CharacteristicsChara
0.1. Size:82K onsemi
bc856bdw1t1g bc857bdw1t1g bc857cdw1t1g bc858cdw1t1g.pdf 

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G Serieswww.onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88These transistors are designed for general purpose amplifierCASE 419BSTYLE 1applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(3) (2) (1)Features S
0.3. Size:181K onsemi
sbc856bdw1t1g.pdf 

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred Deviceshttp://onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88CASE 419BSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applicat
0.4. Size:181K onsemi
bc856bdw1t1g bc857cdw1t1g.pdf 

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred Deviceshttp://onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88CASE 419BSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applicat
0.5. Size:181K onsemi
sbc856bdw1t3g.pdf 

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred Deviceshttp://onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88CASE 419BSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applicat
0.6. Size:181K onsemi
bc856bdw1t3g bc857bdw1t1g.pdf 

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred Deviceshttp://onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88CASE 419BSTYLE 1These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which is(3) (2) (1)designed for low power surface mount applicat
0.7. Size:172K onsemi
bc856bdw1t1g bc857bdw1t1g bc858cdw1t1g.pdf 

BC856BDW1T1G,BC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred DevicesDual General PurposeTransistorshttp://onsemi.comPNP Duals(3) (2) (1)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.Q1 Q2Features These Devices are Pb-Free, Halogen Free/BFR Fr
0.8. Size:156K onsemi
bc856bdw1t1g bc857bdw1t1g sbc857bdw1t1g bc857cdw1t1g bc858cdw1t1g.pdf 

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G Serieswww.onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88These transistors are designed for general purpose amplifierCASE 419BSTYLE 1applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(3) (2) (1)Features S
0.9. Size:182K lrc
lbc856bdw1t1g lbc857bdw1t1g lbc857cdw1t1g lbc858bdw1t1g lbc858cdw1t1g lbc856adw1t1g.pdf 

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.654We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other A
0.10. Size:194K lrc
lbc856adw1t1g lbc856bdw1t1g lbc857bdw1t1g lbc857cdw1t1g lbc858bdw1t1g lbc858cdw1t1g.pdf 

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1G65These transistors are designed for general purpose amplifier4applications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.1We declare that the material of product compliance with RoHS requirements.23S- Prefix for Automotive an
0.11. Size:182K lrc
lbc856bdw1t1g.pdf 

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.654We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other A
0.12. Size:1990K kexin
bc856bdw-858cdw.pdf 

SMD Type TransistorsPNP TransistorsBC856BDW ~ BC858CDW(KC856BDW ~ KC858CDW) Features Collector Current Capability IC=-0.1A Collector Emitter Voltage VCEO=-65V/-45V/-30V2 1345 6 Absolute Maximum Ratings Ta = 25BC857 BC858Parameter Symbol BC856BDW UnitBDW/CDW BDW/CDW Collector - Base Voltage VCBO -80 -50 -30 Collector - Emitter Voltage VCEO -65 -45
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