Справочник транзисторов. MSD601

 

Биполярный транзистор MSD601 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: MSD601
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 0.2 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 210
   Корпус транзистора: SOT23

 Аналоги (замена) для MSD601

 

 

MSD601 Datasheet (PDF)

 ..1. Size:425K  wietron
 msd601.pdf

MSD601 MSD601

MSD601NPN General Purpose Transistors31P b Lead(Pb)-Free2SOT-23MAXIMUM RATINGS(Ta=25C)Rating Symbol Value UnitCollector-Emitter VoltageVCEO50 VVCBOCollector-Base Voltage 60 VVEBOEmitter-Base Voltage 7.0 VICCollector Current - Continuous 100 mAIC(P)Collector Current - Peak 200 mATotal Device DissipationPD0.2 mWTA=25CTj CJunction Temperature

 0.1. Size:110K  motorola
 msd601-r.pdf

MSD601 MSD601

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MSD601RT1/DNPN General Purpose Amplifier*MSD601-RT1Transistors Surface MountCOLLECTORMSD601-ST13*Motorola Preferred Device2 13BASE EMITTERMAXIMUM RATINGS (TA = 25C) 21Rating Symbol Value UnitCollectorBase Voltage V(BR)CBO 60 VdcCASE 318D03, STYLE 1CollectorEmitter Voltage V(BR)CEO 50

 0.2. Size:146K  onsemi
 msd601-rt1 msd601-st1.pdf

MSD601 MSD601

MSD601-RT1, MSD601-ST1Preferred Device NPN General PurposeAmplifier TransistorsSurface MountFeatureshttp://onsemi.com Pb-Free Packages are AvailableCOLLECTOR3MAXIMUM RATINGS (TA = 25C)Rating Symbol Value UnitCollector - Base Voltage V(BR)CBO 60 Vdc1 2BASE EMITTERCollector - Emitter Voltage V(BR)CEO 50 VdcEmitter - Base Voltage V(BR)EBO 7.0 VdcMARKINGColl

 0.3. Size:83K  onsemi
 msd601-r.pdf

MSD601 MSD601

MSD601-RT1, MSD601-ST1Preferred Device NPN General PurposeAmplifier TransistorsSurface MountFeatureshttp://onsemi.com Pb-Free Packages are AvailableCOLLECTOR3MAXIMUM RATINGS (TA = 25C)Rating Symbol Value UnitCollector - Base Voltage V(BR)CBO 60 Vdc1 2BASE EMITTERCollector - Emitter Voltage V(BR)CEO 50 VdcEmitter - Base Voltage V(BR)EBO 7.0 VdcMARKINGColl

 0.4. Size:42K  onsemi
 msd601-rt1-d.pdf

MSD601 MSD601

MSD601-RT1, MSD601-ST1Preferred Device NPN General PurposeAmplifier TransistorsSurface MountFeatureshttp://onsemi.com Pb-Free Packages are AvailableCOLLECTOR3MAXIMUM RATINGS (TA = 25C)Rating Symbol Value UnitCollector - Base Voltage V(BR)CBO 60 Vdc2 1BASE EMITTERCollector - Emitter Voltage V(BR)CEO 50 VdcEmitter - Base Voltage V(BR)EBO 7.0 VdcMARKINGColl

 0.5. Size:83K  onsemi
 msd601-rt1g.pdf

MSD601 MSD601

MSD601-RT1, MSD601-ST1Preferred Device NPN General PurposeAmplifier TransistorsSurface MountFeatureshttp://onsemi.com Pb-Free Packages are AvailableCOLLECTOR3MAXIMUM RATINGS (TA = 25C)Rating Symbol Value UnitCollector - Base Voltage V(BR)CBO 60 Vdc1 2BASE EMITTERCollector - Emitter Voltage V(BR)CEO 50 VdcEmitter - Base Voltage V(BR)EBO 7.0 VdcMARKINGColl

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
Back to Top