Биполярный транзистор KTC2815L
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: KTC2815L
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 10
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 2
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 100
MHz
Ёмкость коллекторного перехода (Cc): 30
pf
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора:
IPAK
Аналоги (замена) для KTC2815L
KTC2815L
Datasheet (PDF)
7.1. Size:405K kec
ktc2815d l.pdf 
SEMICONDUCTOR KTC2815D/LTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORPOWER AMPLIFIER APPLICATION.POWER SWITCHING APPLICATION.AI C JFEATURESDIM MILLIMETERS_A 6.60 + 0.2Low Collector Saturation Voltage _B 6.10 + 0.2_C 5.0 + 0.2: VCE(sat)=0.5V(Max.) (IC=1A) _D 1.10 + 0.2_E 2.70 + 0.2_F 2.30 + 0.1High Speed Switching Time : tstg=1 S(Typ.)H 1.00 MAX
8.1. Size:400K kec
ktc2814.pdf 
SEMICONDUCTOR KTC2814TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORPOWER AMPLIFIER APPLICATION.ABPOWER SWITCHING APPLICATION.DCEFEATURESFLow Collector Saturation Voltage: VCE(sat)=0.5V(Max.) (IC=1A)GHigh Speed Switching Time : tstg=1.0 S(Typ.)HComplementary to KTA1715.DIM MILLIMETERSJA 8.3 MAXKB 5.8LC 0.7_+D 3.2 0.1E 3.5_+F 11.0 0.3
9.1. Size:391K kec
ktc2803.pdf 
SEMICONDUCTOR KTC2803TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORAUDIO FREQUENCY, HIGH FREQUENCY ABPOWER AMPLIFIER DCEFEATURES FComplementary to KTA1704.GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBOCollector-Base Voltage 120 V_+F 11.0 0.3G 2.9 MAXVCEOColl
9.2. Size:707K kec
ktc2875.pdf 
SEMICONDUCTORKTC2875TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORFOR MUTING AND SWITCHING APPLICATION.EFEATURES L B LHigh Emitter-Base Voltage : VEBO=25V(Min.)DIM MILLIMETERS_+A 2.93 0.20High Reverse hFEB 1.30+0.20/-0.15C 1.30 MAX: Reverse hFE=150(Typ.) (VCE=-2V, IC=-2mA)23 D 0.40+0.15/-0.05Low on Resistance : RON=1(Typ.), (IB=5mA) E 2.40+0.30/-0.20
9.3. Size:58K kec
ktc2825d.pdf 
SEMICONDUCTOR KTC2825DTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLED DRIVE APPLICATIONFEATURESA HAdoption of MBIT processes.C JLow collector-to-emitter saturation voltage.DIM MILLIMETERS_Fast switching speed. A 6.6 0.2+_6.1 0.2B +_C 5.0 0.2+_D 1.1 0.2+_2.7 0.2E +_+F 2.3 0.1M G 1.0 MAX_2.3 + 0.2HN_+J 0.5 0.1_G K 1.0
9.4. Size:395K kec
ktc2801.pdf 
SEMICONDUCTOR KTC2801TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORCOLOR TV CHROMA OUTPUT APPLICATION.ABCOLOR TV HORIZONTAL DRIVE APPLICATION.DCEFEAUTRESFHigh Voltage : VCEO=300V.Small Collector Output Capacitance : Cob=4.0pF(Max.).GHDIM MILLIMETERSJA 8.3 MAXKB 5.8LMAXIMUM RATING (Ta=25 ) C 0.7_+D 3.2 0.1CHARACTERISTIC SYMBOL RATING UNITE 3.5
9.5. Size:392K kec
ktc2804.pdf 
SEMICONDUCTOR KTC2804TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORAUDIO AMPLIFIER, VOLTAGE REGULATOR ABDC-DC CONVERTER, RELAY DRIVERDCEFEATURESFLow Saturation Voltage.: VCE(sat) 0.8V (IC=2A, IB=0.2A)GExcellent hFE Linearity and high hFE. H: hFE:70 240 (VCE=2V, IC=0.5A)DIM MILLIMETERSJA 8.3 MAXComplementary to KTA1705.KB 5.8LC 0.7_+D 3.2 0
9.6. Size:422K kec
ktc2874.pdf 
KTC2874SEMICONDUCTORSILICON NPN TRANSISTOR TECHNICAL DATAEPITAXIAL PLANAR TYPEFOR MUTING AND SWITCHING APPLICATION.B CFEATURES High Emitter-Base Voltage : VEBO=25V(Min.)High Reverse hFEN DIM MILLIMETERSA 4.70 MAXE: Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) KB 4.80 MAXGC 3.70 MAXDLow on Resistance : RON=1 (Typ.), (IB=5mA)D 0.45E 1.00F 1.27G 0.85H 0.45
9.7. Size:713K kec
ktc2876.pdf 
KTC2876SEMICONDUCTORSILICON NPN TRANSISTOR TECHNICAL DATAEPITAXIAL PLANAR TYPEFOR MUTING AND SWITCHING APPLICATION.FEATURES BHigh Emitter-Base Voltage : VEBO=25V(Min.)High Reverse hFE: Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)DIM MILLIMETERSOA 3.20 MAXLow on Resistance : RON=1(Typ.), (IB=5mA)HM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C
9.8. Size:397K kec
ktc2800.pdf 
SEMICONDUCTOR KTC2800TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH VOLTAGE APPLICATION.ABDCFEATURESEHigh Transition Frequency : fT=100MHz(Typ.).FComplementary to KTA1700.GHDIM MILLIMETERSJA 8.3 MAXMAXIMUM RATING (Ta=25 )KB 5.8LC 0.7CHARACTERISTIC SYMBOL RATING UNIT_+D 3.2 0.1E 3.5VCBOCollector-Base Voltage 160 V_+F 11.0 0.3G
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