SEMICONDUCTOR KTC3209TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORPOWER AMPLIFIER APPLICATIONS.POWER SWITCHING APPLICATIONS. FEATURESLow Collector Saturation Voltage : VCE(sat)=0.5V(Max.) (IC=1A)High Speed Switching Time : tstg=1.0 S(Typ.)Complementary to KTA1281.MAXIMUM RATING (Ta=25 )CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 50 VVCEOCollector-Emi

DIP Type TransistorsNPN TransistorsKTC3209TO-92LUnit:mm4.9 0.20.7 0.1 Features Low Saturation Voltage0.45 0.1 High Speed Switching Time Complementary to KTA128121 31.27 2.54 0.11.60 (max)Emitter1.2.Collector3.Base4.0(min) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 50

KTC3209(3DA3209) NPN /SILICON NPN TRANSISTOR :,/Purpose: Power amplifier and switching applications. :,, KTA1281(3CA1281) Features: Low saturation voltage, high speed switching time, complementary to KTA1281(3CA1281). /Absolute maximum ratings(Ta=25)

MCCTM Micro Commercial Components20736 Marilla Street ChatsworthKTC3205Micro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939FeaturesNPN Power Dissipation: 1W (Tamb=25 ) Collector Current: 2APlastic-Encapsulate Collector-base Voltage: 30V Epoxy meets UL 94 V-0 flammability ratingTransistor Moisture Sensitivity Level 1 Ma

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors KTC3202 TRANSISTOR (NPN) TO-92 FEATURES 1. EMITTER General Purpose Application Switching Application 2. COLLECTOR 3. BASE Equivalent Circuit

SEMICONDUCTOR KTC3204TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATURES BComplementary to KTA1272.DIM MILLIMETERSOA 3.20 MAXHM B 4.30 MAXC 0.55 MAXMAXIMUM RATING (Ta=25)_D 2.40 + 0.15E 1.27CHARACTERISTIC SYMBOL RATING UNITF 2.30C_+G 14.00 0.50VCBO Collector-Base Voltage 35 VH 0.60 MAXJ 1.05E EVCEOCollecto

SEMICONDUCTOR KTC3203TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. B CFEATURES Complementary to KTA1271.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25) GC 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBO Collector-Base Voltage 35 VG 0.85H 0.45VCEOCollector-Emitter Voltage 30 V_HJ 14.

SEMICONDUCTOR KTC3200TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW NOISE AUDIO AMPLIFIER APPLICATION.B CFEATURESThe KTC3200 is a transistor for low frequency and low noise applications.This device is designed to ower noise figure in the region of low signalsource impedance, and to lower the pulse noise. N DIM MILLIMETERSThis is recommended for the first stages of equalizer

SEMICONDUCTOR KTC3203ATECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATURES B CComplementary to KTA1271AN DIM MILLIMETERSA 4.70 MAXMAXIMUM RATING (Ta=25) EKB 4.80 MAXGC 3.70 MAXCHARACTERISTIC SYMBOL RATING UNIT DD 0.45E 1.00VCBO Collector-Base Voltage 35 VF 1.27G 0.85VCEOCollector-Emitter Voltage 30 VH 0.45_HJ 14.

SEMICONDUCTOR KTC3207TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE SWITCHING APPLICATION.COLOR TV HORIZONTAL DIRVER APPLICATION.B DCOLOR TV CHROMA OUTPUT APPLICATION.FEATURESDIM MILLIMETERSPHigh Voltage : V(BR)CEO=300V.DEPTH:0.2A 7.20 MAXSmall Collector Output Capacitance : Cob=3.0pF(Typ.). B 5.20 MAXCC 0.60 MAXSD 2.50 MAXQE 1.15 MAXKF 1.27G

SEMICONDUCTOR KTC3207TTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE SWITCHING APPLICATION.COLOR TV HORIZONTAL DRIVER APPLICATION.COLOR TV CHROMA OUTPUT APPLICATION.EBKDIM MILLIMETERSFEATURES_A 2.9 + 0.2B 1.6+0.2/-0.1High Voltage : V(BR)CEO=300V_C 0.70 + 0.0523Small Collector Output Capacitance : Cob=3.0pF(Typ.) _D 0.4 + 0.1E 2.8+0.2/-0.3Comp

SEMICONDUCTOR KTC3202TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. B CFEATURESExcellent hFE Linearity: hFE(2)=25(Min.) at VCE=6V, IC=400mA.N DIM MILLIMETERSComplementary to KTA1270.A 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85MAXIMUM RATING (Ta=25 )H 0.45_HJ 14.00 + 0.50CHARACTERI

SEMICONDUCTOR KTC3205TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION.B DFEATURES Complementary to KTA1273.DIM MILLIMETERSPDEPTH:0.2A 7.20 MAXB 5.20 MAXCC 0.60 MAXSMAXIMUM RATING (Ta=25 )D 2.50 MAXQE 1.15 MAXKCHARACTERISTIC SYMBOL RATING UNITF 1.27G 1.70 MAXVCBOCollector-Base Voltage 30 V H 0.55 MAXFF_J 14.00 + 0.50VCE

SEMICONDUCTOR KTC3206TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORBLACK AND WHITE TV VIDEO OUTPUT APLICATION. HIGH VOLTAGE SWITCHING APPLICATION.B DFEATURESHigh Breakdown Voltage : VCEO=150V(Min.).DIM MILLIMETERSPLow Output Capacitance : Cob=5.0pF(Max.).DEPTH:0.2A 7.20 MAXHigh Transition Frequency : fT=120MHz(Typ.). B 5.20 MAXCC 0.60 MAXSD 2.50 MAXQE 1.15 MA

KTC3205 TRANSISTOR (NPN) TO-92L 1. EMITTER FEATURES 2. COLLECTOR Complementary to KTA1273 3. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 1 2 3 VCBO Collector-Base Voltage 30 VVCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 2 A PC Collector Power Dissipation 1 W TJ Juncti

KTC3203(NPN)TO-92 TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features Complementary to KTA1271 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 800 mA PC 625 mWCollector Power Dissipation Dimen

KTC3205 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.700 2 3 5.1001Features7.800 8.200 Complementary to KTA1273 0.6000.800MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units 0.3500.55013.800VCBO Collector-Base Voltage 30 V14.200VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collec

KTC3202(NPN)TO-92 TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features General purpose application switching application MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value UnitsVCBO Collector-Base Voltage 35 VVCEO Collector-Emitter Voltage 30 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 500 mAPC 625 mWCollector Po

KTC3206 TO-92L Transistor (NPN)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 4.7005.100 2 3 1Features7.800 High Breakdown Voltage : VCEO=150V(Min.) 8.200 Low Output Capacitance : Cob=5.0pF(Max.) 0.600High Transition Frequency : fT=120MHz(Typ.). 0.8000.3500.550MAXIMUM RATINGS (TA=25 unless otherwise noted) 13.80014.200Symbol Value Units Parameter

KTC3200 Rev.E Mar.-2016 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features h ,FELow noise, high hFE, high breakdown voltage. / Applications Low noise audio amplifier application. / Equivalent Ci

KTC3205T(BR3DG3205T) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-89 NPN Silicon NPN transistor in a SOT-89 Plastic Package. / Features KTA1273T(BR3CG1273T)Complementary pair with KTA1273T(BR3CG1273T). / Applications High current application. / Equivalent Circuit

DIP Type TransistorsNPN TransistorsKTC3202Unit:mmTO-924.8 0.3 3.8 0.3 Features Excellent hFE Linearity Complementary to KTA12700.60 Max0.45 0.1 0.521 31.Emitter2.Collector1.272.54 3.Base Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 30 V Emitter -

DIP Type TransistorsNPN TransistorsKTC3206TO-92LUnit:mm4.9 0.2 Features0.7 0.1 High Breakdown Voltage High Transition Frequency0.45 0.1 Complementary to KTA102421 31.27 2.54 0.11.60 (max)Emitter1.2.Collector3.Base4.0(min) Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 200