Биполярный транзистор 2N5970 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N5970
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 150 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 20 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 4 MHz
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO3
2N5970 Datasheet (PDF)
2n5970.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5970 DESCRIPTION With TO-3 package Low-collector emitter saturation voltage APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL
2n5970.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5970 DESCRIPTION With TO-3 package Low collector saturation voltage High power dissipations APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute max
2n5971.pdf
2N5971Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
2n5972.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5972 DESCRIPTION With TO-3 package Low-collector emitter saturation voltage APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL
2n5973.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5973 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL
2n5972.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5972 DESCRIPTION With TO-3 package Low collector saturation voltage High power dissipations APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute max
2n5973.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5973 DESCRIPTION With TO-3 package Low collector saturation voltage High power dissipations APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute max
Другие транзисторы... 2N5963 , 2N5964 , 2N5965 , 2N5966 , 2N5967 , 2N5968 , 2N5969 , 2N597 , 2SB817 , 2N5971 , 2N5972 , 2N5973 , 2N5974 , 2N5975 , 2N5976 , 2N5977 , 2N5978 .
