Биполярный транзистор KTC3780U - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KTC3780U
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 6 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 1.5 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 125 °C
Граничная частота коэффициента передачи тока (ft): 8000 MHz
Ёмкость коллекторного перехода (Cc): 1 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: USM
KTC3780U Datasheet (PDF)
ktc3780u.pdf
SEMICONDUCTOR KTC3780UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURESM B MDIM MILLIMETERSLow Noise Figure, High Gain._A 2.00 0.20+DNF=1.4dB, |S21e|2=12dB (f=1GHz). 2 _+B 1.25 0.15_C 0.90 + 0.101 3D 0.3+0.10/-0.05_+E 2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30MAXIMUM RATING (Ta=25)K 0.00-0.10L
ktc3708u.pdf
SEMICONDUCTOR KTC3708UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHigh frequency amplifier transistor, RF switching application.EFEATURESM B MDIM MILLIMETERSVery low on resistance (RON)._A 2.00 0.20+D2Low capacitance. _+B 1.25 0.15_C 0.90 + 0.1031D 0.3+0.10/-0.05_+E 2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30MAXIMUM RATING (Ta=25 )K 0.00-0.10
ktc3770t.pdf
SEMICONDUCTOR KTC3770TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EBFEATURES KDIM MILLIMETERSLow Noise Figure, High Gain._A 2.9 + 0.2B 1.6+0.2/-0.1NF=1.1dB, |S21e|2=11dB (f=1GHz)._C 0.70 + 0.0523_D 0.4 + 0.1E 2.8+0.2/-0.3_F 1.9 + 0.21G 0.95_H 0.16 + 0.05MAXIMUM RATING (Ta=25 )I 0.00-0.10J 0.25+0.25/-
ktc3770u.pdf
SEMICONDUCTOR KTC3770UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURESM B MDIM MILLIMETERSLow Noise Figure, High Gain._A 2.00 0.20+D2NF=1.1dB, |S21e|2=11dB (f=1GHz). _+B 1.25 0.15_C 0.90 + 0.1031D 0.3+0.10/-0.05_+E 2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30MAXIMUM RATING (Ta=25 )K 0.00-0.10L 0.70
ktc3730v.pdf
SEMICONDUCTOR KTC3730VTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURESBLow Noise Figure, High Gain.Small rbbCc (Typ. 4pS).DIM MILLIMETERS2_A 1.2 +0.05_B 0.8 +0.0513_C 0.5 + 0.05_+D 0.3 0.05_E 1.2 + 0.05MAXIMUM RATING (Ta=25 ) _G 0.8 + 0.05H 0.40P PCHARACTERISTIC SYMBOL RATING UNIT _J 0.12 +
ktc3770v.pdf
SEMICONDUCTOR KTC3770VTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURESBLow Noise Figure, High Gain.NF=1.1dB, |S21e|2=11dB (f=1GHz).DIM MILLIMETERS2_A 1.2 + 0.05_B 0.8 + 0.0513_C 0.5 + 0.05_D 0.3 + 0.05_E 1.2 + 0.05MAXIMUM RATING (Ta=25 ) _G 0.8 + 0.05H 0.40P P_J 0.12 + 0.05CHARACTERISTIC SYMBO
ktc3790u.pdf
SEMICONDUCTOR KTC3790UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURESM B MDIM MILLIMETERSLow Noise Figure, High Gain._A 2.00 0.20+D2NF=1.2dB, |S21e|2=13dB (f=1GHz). _+B 1.25 0.15_C 0.90 + 0.1031D 0.3+0.10/-0.05_+E 2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30MAXIMUM RATING (Ta=25 )K 0.00-0.10L 0.70
ktc3730f.pdf
SEMICONDUCTOR KTC3730FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.FEATURESELow Noise Figure, High Gain.BSmall rbb Cc (Typ. 4pS).DIM MILLIMETERS2_A 0.6 + 0.053 _+B 0.8 0.05C 0.38+0.02/-0.041MAXIMUM RATING (Ta=25)_+D 0.2 0.05_+E 1.0 0.05CHARACTERISTIC SYMBOL RATING UNIT_+G 0.35 0.05_+J 0.1
ktc3770ul.pdf
SEMICONDUCTOR KTC3770ULTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.FEATURES C1 4Low Noise Figure, High Gain.NF=1.1dB, |S21e|2=11dB (f=1GHz).ADIM MILLIMETERS_A 1.0 0.05+_B +0.6 0.052 +0.02 3C 0.36- 0.03B_D 0.25 + 0.03_E 0.15 + 0.03MAXIMUM RATING (Ta=25 ) _F 0.65 + 0.03H2 3 _G 0.35 + 0.03CHARACTERI
ktc3770f.pdf
SEMICONDUCTOR KTC3770FTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.FEATURESELow Noise Figure, High Gain.BNF=1.1dB, |S21e|2=11dB (f=1GHz).DIM MILLIMETERS2_A 0.6 + 0.053 _+B 0.8 0.05C 0.38+0.02/-0.041MAXIMUM RATING (Ta=25)_+D 0.2 0.05_+E 1.0 0.05CHARACTERISTIC SYMBOL RATING UNIT_+G 0.35 0.05_
ktc3730u.pdf
SEMICONDUCTOR KTC3730UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EFEATURESM B MDIM MILLIMETERSLow Noise Figure, High Gain._A 2.00 0.20+DSmall rbbCc (Typ. 4pS). 2 _+B 1.25 0.15_C 0.90 0.10+1 3D 0.3+0.10/-0.05_+E 2.10 0.20G 0.65H 0.15+0.1/-0.06J 1.30MAXIMUM RATING (Ta=25)K 0.00-0.10L 0.70
ktc3770s.pdf
SEMICONDUCTOR KTC3770STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.EL B LFEATURESDIM MILLIMETERSLow Noise Figure, High Gain._+A 2.93 0.20B 1.30+0.20/-0.15NF=1.1dB, |S21e|2=11dB (f=1GHz).C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.201G 1.90H 0.95J 0.13+0.10/-0.05K 0.00 ~ 0.10MAXIMUM RATING (Ta=25 )L 0.55P P
ktc3790s.pdf
SEMICONDUCTOR KTC3790STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORVHF/UHF WIDE BAND AMPLIFIER APPLICATION.FEATURESELow Noise Figure, High Gain.L B LNF=1.2dB, |S21e|2=13dB (f=1GHz). DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90MAXIMUM RATING (Ta=25 )H 0.95J 0.13+0.10/-0.05CHARACTERISTIC SYMBOL RATIN
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , TIP35C , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050