KTC4072V datasheet, аналоги, основные параметры
Наименование производителя: KTC4072V 📄📄
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.1 W
Макcимально допустимое напряжение коллектор-база (Ucb): 15 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 12 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 320 MHz
Ёмкость коллекторного перехода (Cc): 7.5 pf
Статический коэффициент передачи тока (hFE): 270
Корпус транзистора: VSM
📄📄 Копировать
Аналоги (замена) для KTC4072V
- подборⓘ биполярного транзистора по параметрам
KTC4072V даташит
..1. Size:359K kec
ktc4072v.pdf 
SEMICONDUCTOR KTC4072V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. FEATURES E High Current. B Low VCE(sat). VCE(sat) 250mV at IC=200mA/IB=10mA. DIM MILLIMETERS 2 _ Complementary to KTA2012V. A 1.2 +0.05 _ B 0.8 +0.05 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 _ E 1.2 + 0.05 _ G 0.8 0.05 + H 0.40 P P MAXIMUM RATING (Ta=25 ) _ J 0.12 + 0.05 _ K
7.1. Size:715K kec
ktc4072e.pdf 
SEMICONDUCTOR KTC4072E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. FEATURES High Current. Low VCE(sat). VCE(sat) 250mV at IC=200mA/IB=10mA. Complementary to KTA2012E. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 15 V VCEO Collector-Emitter Voltage 12 V VEBO Emitter-Base Voltage 6 V IC 500 mA Collec
8.1. Size:301K mcc
ktc4075-bl-gr-y-o.pdf 
KTC4075-O MCC KTC4075-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth KTC4075-GR Micro Commercial Components CA 91311 Phone (818) 701-4933 KTC4075-BL Fax (818) 701-4939 Features NPN Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Plastic-Encapsulate Complementary to KTA2014 Epoxy meets UL 94 V-0
8.2. Size:65K kec
ktc4075v.pdf 
SEMICONDUCTOR KTC4075V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Excellent hFE Linearity hFE(0.1mA)/hFE(2mA)=0.95(Typ.). DIM MILLIMETERS 2 _ High hFE hFE=70 700. A 1.2 +0.05 _ B 0.8 +0.05 Low Noise NF=1dB(Typ.), 10dB(Max.). 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 Complementary to KTA2014V. _ E
8.3. Size:744K kec
ktc4075.pdf 
SEMICONDUCTOR KTC4075 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEAUTRES M B M DIM MILLIMETERS Excellent hFE Linearity _ + A 2.00 0.20 D hFE(0.1mA)/hFE(2mA)=0.95(Typ.). 2 _ + B 1.25 0.15 _ High hFE hFE=70 700. + C 0.90 0.10 3 1 D 0.3+0.10/-0.05 Low Noise NF=1dB(Typ.), 10dB(Max.). _ + E 2.10 0.2
8.4. Size:44K kec
ktc4079.pdf 
SEMICONDUCTOR KTC4079 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH FREQUENCY APPLICATION. HF, VHF BAND AMPLIFIER APPLICATION. E FEATURE M B M DIM MILLIMETERS High Power Gain Gpe=29dB(Typ.) (f=10.7MHz) _ A + 2.00 0.20 D 2 _ + B 1.25 0.15 _ + C 0.90 0.10 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 G 0.65 MAXIMUM RATING (Ta=25 ) H 0.15+0.1/-0.06 J 1.30 CHARACT
8.5. Size:33K kec
ktc4076.pdf 
SEMICONDUCTOR KTC4076 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES M B M DIM MILLIMETERS Excellent hFE Linearity _ A + 2.00 0.20 D 2 hFE(2)=25(Min.) at VCE=6V, IC=400mA. _ + B 1.25 0.15 _ + C 0.90 0.10 Complementary to KTA2015. 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 G 0.65 H 0.15+0.1/-0.06 J 1.30
8.6. Size:39K kec
ktc4074v.pdf 
SEMICONDUCTOR KTC4074V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Excellent hFE Linearity hFE(0.1mA)/hFE(2mA)=0.95(Typ.). DIM MILLIMETERS 2 _ High hFE hFE=120 400. A 1.2 +0.05 _ B 0.8 +0.05 Low Collector-to-Emitter Saturation Voltage. 1 3 _ C 0.5 + 0.05 _ D 0.3 + 0.05 Complementary to KTA2013V. _ E
8.7. Size:636K kec
ktc4074f.pdf 
SEMICONDUCTOR KTC4074F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E Excellent hFE Linearity B hFE(0.1mA)/hFE(2mA)=0.95(Typ.). High hFE hFE=120 400. Complementary to KTA2013F. DIM MILLIMETERS 2 _ A 0.6 + 0.05 Thin Fine Pitch Small Package. 3 _ + B 0.8 0.05 C 0.38+0.02/-0.04 1 _ + D 0.2 0.05 _ +
8.8. Size:36K kec
ktc4077.pdf 
SEMICONDUCTOR KTC4077 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR LOW NOISE AMPLIFIER APPLICATION. FEATURES E High Voltage VCEO=120V. M B M DIM MILLIMETERS Excellent hFE Linearity _ A + 2.00 0.20 D 2 hFE(0.1mA)/hFE(2mA)=0.95(Typ.). _ + B 1.25 0.15 _ + C 0.90 0.10 High hFE hFE=200 700. 3 1 D 0.3+0.10/-0.05 _ E + 2.10 0.20 Low Noise NF=1dB(Typ.),
8.9. Size:65K kec
ktc4075e.pdf 
SEMICONDUCTOR KTC4075E TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B DIM MILLIMETERS Excellent hFE Linearity _ + A 1.60 0.10 D hFE(0.1mA)/hFE(2mA)=0.95(Typ.). _ + 2 B 0.85 0.10 _ + C 0.70 0.10 Low Noise NF=1dB(Typ.), 10dB(Max.). 3 1 D 0.27+0.10/-0.05 _ Complementary to KTA2014E. E 1.60 0.10 +
8.10. Size:63K kec
ktc4075f.pdf 
SEMICONDUCTOR KTC4075F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E Excellent hFE Linearity B hFE(0.1mA)/hFE(2mA)=0.95(Typ.). High hFE hFE=70 700. Low Noise NF=1dB(Typ.), 10dB(Max.). DIM MILLIMETERS 2 _ A 0.6 + 0.05 Complementary to KTA2014F. 3 _ + B 0.8 0.05 C 0.38+0.02/-0.04 1 Thin Fine Pitc
8.11. Size:902K htsemi
ktc4075.pdf 
KTC4075 TRANSISTOR (NPN) SOT-23 FEATURES 1. BASE 2. EMITTER 3. COLLECTOR Excellent hFE linearity High hFE Low Noise Complementary to KTA2014 MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO 5 V Emitter-Base Voltage IC Collector Current -Continuous 15
8.12. Size:477K htsemi
ktc4076.pdf 
KTC4076 TRANSISTOR (NPN) FEATURES Excellent hFE Linearity SOT 323 Complementary to KTA2015 APPLICATIONS General Purpose Switching 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Unit 3. COLLECTOR V Collector-Base Voltage 35 V CBO V Collector-Emitter Voltage 30 V CEO V Emitter-Base Voltage 5 V EBO I Coll
8.13. Size:248K lge
ktc4075.pdf 
KTC4075 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Excellent hFE linearity High hFE Low Noise Complementary to KTA2014 Dimensions in inches and (millimeters) MAXIMUM RATINGS(TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO 5 V Emitter-Base Volta
8.14. Size:1437K kexin
ktc4075.pdf 
SMD Type Transistors NPN Transistors KTC4075 Features Excellent hFE Linearity Low Noise Complementary to KTA2014 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 150 mA Bas
8.15. Size:316K kexin
ktc4076.pdf 
SMD Type Transistors NPN Transistors KTC4076 Features Excellent hFE Linearity Complementary to KTA2015 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 35 Collector - Emitter Voltage VCEO 30 V Emitter - Base Voltage VEBO 5 Collector Current - Continuous IC 500 mA Base Current IB 50
Другие транзисторы: KTC3878S, KTC3879S, KTC3880S, KTC3881S, KTC3911S, KTC3964, KTC4021, KTC4072E, 2SA1837, KTC4074V, KTC4075E, KTC4075V, KTC4080, KTC4080E, KTC4081, KTC4217, KTC4468
