Биполярный транзистор KTC811T
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: KTC811T
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.9
W
Макcимально допустимое напряжение коллектор-база (Ucb): 35
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 0.5
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 300
MHz
Ёмкость коллекторного перехода (Cc): 7
pf
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора: TS6
Аналоги (замена) для KTC811T
KTC811T
Datasheet (PDF)
..1. Size:46K kec
ktc811t.pdf 
SEMICONDUCTOR KTC811TTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EK B KFEATURES DIM MILLIMETERSExcellent hFE Linearity _A 2.9 + 0.216B 1.6+0.2/-0.1: hFE(2)=25(Min.) at VCE=6V, IC=400mA._C 0.70 + 0.052 5_+D 0.4 0.1Complementary to KTA711T.E 2.8+0.2/-0.3_F 1.9 + 0.23 4G 0.95_H 0.16 + 0.05I 0
8.1. Size:43K kec
ktc811e.pdf 
SEMICONDUCTOR KTC811ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. BB1FEATURESA super-minimold package houses 2 transistor.1 6 DIM MILLIMETERSExcellent temperature response between these 2 transistor. _A 1.6 + 0.05_A1 1.0 + 0.05High pairing property in hFE. 52_B 1.6 + 0.05_B1 1.2 + 0.05The follwing characteri
8.2. Size:43K kec
ktc811u.pdf 
SEMICONDUCTOR KTC811UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BFEATURESB1A super-minimold package houses 2 transistor.DIM MILLIMETERS1 6_Excellent temperature response between these 2 transistor. A 2.00 + 0.20_2 5 A1 1.3 + 0.1High pairing property in hFE._B 2.1 + 0.13 4 D _B1 1.25 + 0.1The follwing char
9.1. Size:47K kec
ktc814u.pdf 
SEMICONDUCTORKTC814UTECHNICAL DATAEPITAXIAL PLANAR NPN TRANSISTORFOR MUTING AND SWITCHING APPLICATION.FEATURES BHigh Emitter-Base Voltage : VEBO=25V(Min.)B1High Reverse hFEDIM MILLIMETERS1 6_: Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) A 2.00 + 0.20_2 5 A1 1.3 + 0.1Low on Resistance : RON=1 (Typ.), (IB=5mA)_B 2.1 + 0.13 4 D _B1 1.25 + 0.1C 0.65D 0.2+0.1
9.2. Size:50K kec
ktc813u.pdf 
SEMICONDUCTOR KTC813UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORTV TUNER, UHF OSCILLATOR APPLICATION.(COMMON BASE) TV TUNER, UHF CONVERTER APPLICATION.B(COMMON BASE) B1DIM MILLIMETERS1 6_FEATURES A 2.00 + 0.20_2 5 A1 1.3 + 0.1High Transition Frequency : fT=1500MHz (Typ.)._B 2.1 + 0.13 4 D _B1 1.25 + 0.1Excellent hFE Linearity. C 0.65D 0.2+0.10/-0.05
9.3. Size:43K kec
ktc812u.pdf 
SEMICONDUCTOR KTC812UTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION.BFEATURESB1A super-minimold package houses 2 transistor.DIM MILLIMETERS1 6_Excellent temperature response between these 2 transistor. A 2.00 + 0.20_2 5 A1 1.3 + 0.1High pairing property in hFE._B 2.1 + 0.13 4 D _B1 1.25 + 0.1The follwing char
9.4. Size:49K kec
ktc812t.pdf 
SEMICONDUCTORKTC812TTECHNICAL DATAEPITAXIAL PLANAR NPN TRANSISTORFOR MUTING AND SWITCHING APPLICATION.FEATURES EK B KHigh Emitter-Base Voltage : VEBO=25V(Min.)DIM MILLIMETERSHigh Reverse hFE _A 2.9 + 0.216B 1.6+0.2/-0.1: Reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA)_C 0.70 + 0.052 5_+D 0.4 0.1Low on Resistance : RON=1 (Typ.), (IB=5mA)E 2.8+0.2/-0.3_F 1.9
9.5. Size:73K kec
ktc815.pdf 
SEMICONDUCTOR KTC815TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORLOW FREQUENCY AMPLIFIERB CFEATURESCollector-Base Voltage : VCBO=60V.Complementary to KTA539.DIM MILLIMETERSN A 4.70 MAXB 4.80 MAXEKG C 3.70 MAXD 0.45DE 1.00F 1.27G 0.85H 0.45MAXIMUM RATING (Ta=25 )_J 14.00 + 0.50HK 0.55 MAXCHARACTERISTIC SYMBOL RATING UNITF F L 2.30M 0.45 MAXV
9.6. Size:42K kec
ktc812e.pdf 
SEMICONDUCTOR KTC812ETECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. BB1FEATURESA super-minimold package houses 2 transistor.1 6 DIM MILLIMETERSExcellent temperature response between these 2 transistor. _A 1.6 + 0.05_A1 1.0 + 0.05High pairing property in hFE. 52_B 1.6 + 0.05_B1 1.2 + 0.05The follwing characteri
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