Биполярный транзистор 2N5977
- описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N5977
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 75
W
Макcимально допустимое напряжение коллектор-база (Ucb): 60
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 5
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 2
MHz
Ёмкость коллекторного перехода (Cc): 200
pf
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора:
TO126
Аналоги (замена) для 2N5977
2N5977
Datasheet (PDF)
9.1. Size:12K semelab
2n5971.pdf 
2N5971Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25) 26.67 (1.05)9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 2 Bipolar NPN Device. 3VCEO = 80V (case)3.84 (0.151)4.09 (0.161)7.92 (0.312) IC = 15A 12.70 (0.50) All Semelab hermetically sealed products can be processed in a
9.2. Size:115K jmnic
2n5972.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5972 DESCRIPTION With TO-3 package Low-collector emitter saturation voltage APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL
9.3. Size:93K jmnic
2n5973.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5973 DESCRIPTION With TO-3 package Low collector-emitter saturation voltage APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL
9.4. Size:100K jmnic
2n5970.pdf 
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N5970 DESCRIPTION With TO-3 package Low-collector emitter saturation voltage APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 Emitter3 CollectorFig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=) SYMBOL
9.5. Size:117K inchange semiconductor
2n5972.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5972 DESCRIPTION With TO-3 package Low collector saturation voltage High power dissipations APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute max
9.6. Size:116K inchange semiconductor
2n5973.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5973 DESCRIPTION With TO-3 package Low collector saturation voltage High power dissipations APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute max
9.7. Size:117K inchange semiconductor
2n5970.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N5970 DESCRIPTION With TO-3 package Low collector saturation voltage High power dissipations APPLICATIONS Designed for general-purpose power amplifier and switching applications PINNING PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute max
Другие транзисторы... 2N597
, 2N5970
, 2N5971
, 2N5972
, 2N5973
, 2N5974
, 2N5975
, 2N5976
, D882P
, 2N5978
, 2N5979
, 2N598
, 2N5980
, 2N5981
, 2N5982
, 2N5983
, 2N5984
.
