Справочник транзисторов. MJE13005DF

 

Биполярный транзистор MJE13005DF Даташит. Аналоги


   Наименование производителя: MJE13005DF
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 30 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 800 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 5 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 4 MHz
   Ёмкость коллекторного перехода (Cc): 65 pf
   Статический коэффициент передачи тока (hfe): 18
   Корпус транзистора: TO220IS
 

 Аналог (замена) для MJE13005DF

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MJE13005DF Datasheet (PDF)

 ..1. Size:375K  kec
mje13005df.pdfpdf_icon

MJE13005DF

SEMICONDUCTOR MJE13005DFTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE HIGH SPEED POWER SWITCHAPPLICATION.ACBuilt-in Free wheeling Diode makes efficient anti saturation operation.DIM MILLIMETERSSSuitable for half bridge light ballast Applications._A 10.0 + 0.3_+B 15.0 0.3ELow base drive requirement.C _2.70 0.3+D 0.76+0.09/-0.05MAXIMUM R

 5.1. Size:118K  utc
mje13005d.pdfpdf_icon

MJE13005DF

UNISONIC TECHNOLOGIES CO., LTD MJE13005D Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER 11TRANSISTOR TO-220TO-220F DESCRIPTION The UTC MJE13005D is a high voltage fast-switching NPN 1power transistor. It is characterized by high breakdown voltage,1high current capability, high switching speed and high reliability. TO-251 TO-126The UTC

 5.2. Size:115K  utc
mje13005d-k.pdfpdf_icon

MJE13005DF

UNISONIC TECHNOLOGIES CO., LTD MJE13005D-K Preliminary NPN SILICON TRANSISTOR HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR DESCRIPTION The UTC MJE13005D-K is a high voltage fast-switching NPN power transistor. It is characterized by high breakdown voltage,high current capability, high switching speed and high reliability. The UTC MJE13005D-K is intended to be used in

 5.3. Size:51K  kec
mje13005d.pdfpdf_icon

MJE13005DF

SEMICONDUCTOR MJE13005DTECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTORHIGH VOLTAGE HIGH SPEED POWER SWITCHAPPLICATION.ABuilt-in Free wheeling Diode makes efficient anti saturation operation.OCSuitable for half bridge light ballast Applications.FDIM MILLIMETERSLow base drive requirement.E _G A 9.9 + 0.2MAXIMUM RATING (Ta=25 )B 15.95 MAXBC 1.3+0.1/-0.05Q_CHAR

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