MMBTA517 - Даташиты. Аналоги. Основные параметры

SEMICONDUCTOR MMBTA517 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE HIGH DARLINGTON TRANSISTOR. E L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 0.10 VCBO Collector-Base Voltage 40 V L 0.55 P P

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTA55LT1/D Driver Transistors MMBTA55LT1 COLLECTOR PNP Silicon 3 MMBTA56LT1* *Motorola Preferred Device 1 BASE 2 EMITTER MAXIMUM RATINGS 3 Rating Symbol MMBTA55 MMBTA56 Unit 1 Collector Emitter Voltage VCEO 60 80 Vdc 2 Collector Base Voltage VCBO 60 80 Vdc Emitter Base Voltage VEBO 4.0 Vdc

MPSA55 MMBTA55 PZTA55 C C E E C B C TO-92 B SOT-23 B SOT-223 E Mark 2H PNP General Purpose Amplifier Absolute Maximum Ratings* Symbol Parameter Value Units VCES Collector-Emitter Voltage

February 2006 MPSA56/MMBTA56/PZTA56 PNP General Purpose Amplifier Description This device is designed for general purpose amplifier applications at collector currents to 300mA. Sourced from Process 73 Absolute Maximum Ratings* TA = 25 C unless otherwise specified. Parameter Symbol Value Unit Collector-Emitter Voltage VCES -80 V Collector-Base Voltage VCBO -80 V Emitter-Base Voltag

MMBTA55 / MMBTA56 PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT-23 Ideal for Low Power Amplification and Switching Case Material Molded Plastic, Green Molding Compound; Complementary NPN Type MMBTA05 / MMBTA06 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Complian

SMBTA56/MMBTA56 PNP Silicon AF Transistor Low collector-emitter saturation voltage 2 3 Complementary type SMBTA06 / MMBTA06(NPN) 1 Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package SMBTA56/MMBTA56 s2G SOT23 1=B 2=E 3=C Maximum Ratings Parameter Symbol Value Unit 80 V Collector-emitter voltage VCEO 80 Collector-

MCC MMBTA55 TM Micro Commercial Components 20736 Marilla Street Chatsworth THRU Micro Commercial Components CA 91311 Phone (818) 701-4933 MMBTA56 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP General This device is designed for general purpose amplifier applications at collector curren

MMBTA55,MMBTA56 Features Halogen Free. Green Device (Note 1) Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP General Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Purpose Amplifier Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Temperature Range -55 to

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series Driver Transistors PNP Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT-23 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 318 STYLE 6 Compliant* COLLECTOR 3 MAXIMUM RATING

MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series Driver Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable SOT-23 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 318 STYLE 6 Compliant COLLECTOR 3 MAXIMUM RATINGS Rat

MMBTA56W, SMMBTA56W Driver Transistor PNP Silicon Features Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model - 4 kV Machine Model - 400 V S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable SC-70 (SOT-323) CASE 419 These Devices are Pb-Free, Halog

MMBTA55LT1G, MMBTA56LT1G Driver Transistors PNP Silicon http //onsemi.com Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR Compliant 3 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO Vdc MMBTA55 -60 3 MMBTA56 -80 Collector-Base Voltage VCBO Vdc MMBTA55 -60 1 MMBTA56 -80 2 Emitter-Base Voltage VE

MMBTA56W, SMMBTA56W Driver Transistor PNP Silicon Features Moisture Sensitivity Level 1 www.onsemi.com ESD Rating Human Body Model - 4 kV Machine Model - 400 V S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable SC-70 (SOT-323) CASE 419 These Devices are Pb-Free, Halogen

MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series Driver Transistors PNP Silicon www.onsemi.com Features S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable SOT-23 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 318 STYLE 6 Compliant COLLECTOR 3 MAXIMUM RATINGS Rat

MMBTA55L Series, MMBTA56L Series, SMMBTA56L Series Driver Transistors PNP Silicon http //onsemi.com Features AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements SOT-23 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS CASE 318 STYLE 6 Compliant* COLLECTOR 3 MAXIMUM RATING

UNISONIC TECHNOLOGIES CO., LTD MMBTA56 PNP SILICON TRANSISTOR AMPLIFIER TRANSISTOR FEATURES 3 * Collector-Emitter Voltage VCEO=-80V * Collector Dissipation PD=350mW 1 2 SOT-23 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MMBTA56L-AE3-R MMBTA56G-AE3-R SOT-23 E B C Tape Reel MARKING www.unisonic.com.tw 1 of 5

UNISONIC TECHNOLOGIES CO., LTD MMBTA55 Preliminary AMPLIFIER TRANSISTOR PNP MMBTA55 FEATURES * Collector-Emitter Voltage VCEO=60V ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 MMBTA55L-AE3-R MMBTA55G-AE3-R SOT-23 E B C Tape Reel MMBTA55L-AL3-R MMBTA55G-AL3-R SOT-323 E B C Tape Reel Note Pin assignment E EMITTER,

MMBTA55 / MMBTA56 PNP Silicon Elektronische Bauelemente Driver Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free SOT-23 SOT-23 3 Dim Min Max 1 A A 2.800 3.040 L 2 B 1.200 1.400 3 C 0.890 1.110 S COLLECTOR Top View B D 0.370 0.500 1 2 3 G 1.780 2.040 V G H 0.013 0.100 1 J 0.085 0.177 BASE C K 0.450 0.600 L 0.890 1.020 2 H J D E

MMBTA56 -0.5A , -80V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES General Purpose Amplifier Applications A L 3 3 MARKING Top View C B 1 1 2 2GM 2 K E D PACKAGE INFORMATION H J F G Package MPQ Leader Size SOT-23 3K 7 inch Millimeter Millimeter R

www.jscj-elec.com AD-MMBTA56 JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD. AD-MMBTA56 Plastic-Encapsulated Transistor AD-MMBTA56 Transistor (PNP) FEATURES General purpose amplifier applications AEC-Q101 qualified MARKING 2GM = Device code 2GM Version 1.0 1 / 6 2021-07-01 www.jscj-elec.com AD-MMBTA56 MAXIMUM RATINGS (T = 25 C unless otherwise specifie

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR (PNP) SOT 23 FEATURES General Purpose Amplifier Applications MARKING 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltage -80 V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors MMBTA55 TRANSISTOR (PNP) SOT 23 FEATURES Driver Transistors MARKING 2H 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -60 V CEO VEBO Emit

SEMICONDUCTOR MMBTA56 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY AMPLIFIER APPLICATIONS. FEATURE E Complementary to MMBTA06 L B L DIM MILLIMETERS _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 0.10 VCBO Collector-B

SEMICONDUCTOR MMBTA55 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR AUDIO FREQUENCY AMPLIFIER APPLICATIONS. FEATURES E L B L Complementary to MMBTA05. DIM MILLIMETERS Driver Stage Application of 20 to 25 Watts Amplifiers. _ + 2.93 0.20 A B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 H 0.95 MAXIMUM RATING (Ta=25 ) J 0.13+0.10/-0.05 K 0.00

MMBTA56 TRANSISTOR(PNP) SOT 23 FEATURES General Purpose Amplifier Applications MARKING 2GM 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltage -80 V CEO VEBO Emitter-Base Voltage -4 V IC Collector Current -500 mA P Collector Power Dissip

MMBTA55 TRANSISTOR(PNP) SOT 23 FEATURES Driver Transistors MARKING 2H 1. BASE 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -60 V CEO VEBO Emitter-Base Voltage -4 V IC Collector Current -500 mA P Collector Power Dissipation 225 mW C R The

MMBTA55 MMBTA56 Driver PNP 3 1 2 SOT-23 MMBTA55 MMBTA56 -60 V -80 CEO -60 -80 -4.0 -4.0 -5 MMBTA55=2H, MMBTA56=2GM (3) - -60 MMBTA55 MMBTA56 -80 - 0 MMBTA55 -60 MMBTA56 -80 - 0 -4.0 u -0.1 I =0) S B -0.1 -6 MMBTA55 u -0.1 -8 MMBTA56 _ _

FM120-M WILLAS THRU MMBTA5xLT1 Driver Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better revSiliconge current and thermal resistance. PNP erse leaka SOD-123H Low profile surface mounted application in order to optimi

MMBTA56 PNP General Purpose Transistor for amplifier applications On special request, these transistors can be manufactured in different pin configurations. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage -VCBO 80 V Collector Emitter Voltage -VCES 80 V Emitter Base Voltage -VEBO 4 V Collector Current -IC 500 mA

SEMICONDUCTOR MMBTA55/56 TECHNICAL DATA Driver Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. 3 2 1 MAXIMUM RATINGS Value SOT 23 Rating Symbol MMBTA55 MMBTA56 Unit Collector Emitter Voltage V CEO 60 80 Vdc 3 Collector Base Voltage V 60 80 Vdc CBO COLLECTOR Emitter Base Voltage V 4.0 Vdc EBO 1 Colle

SEMICONDUCTOR MMBTA55/56 TECHNICAL DATA Driver Transistors PNP Silicon We declare that the material of product compliance with RoHS requirements. 3 2 MAXIMUM RATINGS 1 Value Rating Symbol MMBTA55 MMBTA56 Unit SOT 23 Collector Emitter Voltage V CEO 60 80 Vdc Collector Base Voltage V 60 80 Vdc CBO Emitter Base Voltage V 4.0 Vdc EBO Collector Current

SMD Type Transistors PNP Transistors MMBTA56 (KMBTA56) SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-80V 1 2 COLLECTOR +0.1 +0.05 3 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1 1.Base BASE 2.Emitter 3.collector 2 EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Un

SMD Type Transistors PNP Transistors MMBTA55 (KMBTA55) SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-60V 1 2 COLLECTOR +0.1 +0.05 3 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1 1.Base BASE 2.Emitter 3.collector 2 EMITTER Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Un

PMMBTA05-AU / MMBTA06-AU / MMBTA55-AU / MMBTA56-AU NPN AND PNP HIGH VOLTAGE TRANSISTOR SOT-23 Unit inch(mm) 60 80V 225mW Voltage Power Features NPN and PNP silicon, planar design Collector current IC = 500mA AEC-Q101 qualified Lead free in compliance with EU RoHS2.0 (2011/65/EU & 2015/865/EU directive) Green molding compound as per IEC61249 Std.. (

PMMBTA05 / MMBTA06 / MMBTA55 / MMBTA56 NPN AND PNP HIGH VOLTAGE TRANSISTOR SOT-23 Unit inch(mm) 60 80V 225mW Voltage Power Features NPN and PNP silicon, planar design Collector current IC = 500mA Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard Mechanical Data Case SOT-23 Package Terminals Solderable

MMBTA56 SOT-23 Plastic-Encapsulate Transistors TRANSI STOR (PNP) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Complimentary Type NPN Transistor MMBTA06 General Purpose Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -80 V Em

MMBTA55 SOT-23 Plastic-Encapsulate Transistors Equivalent Circuit FEATURES Collector Current Capability IC=-0.5A Collector Emitter Voltage VCEO=-60V SOT-23 1.BASE 2.EMITTER 3.COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -60 V Emitter-Base Voltage VEBO -4 V Collec

RoHS RoHS COMPLIANT COMPLIANT MMBTA55 THRU MMBTA56 PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-23 Molding compound

SOT-23 Plastic-Encapsulate Transistors MMBTA55 TRANSISTOR (PNP) FEATURES Driver Transistors MARKING 1H 1.Base 2.Emitter 3.Collector SOT-23 Plastic Package MAXIMUM RATINGS (T =25 unless otherwise noted) a Symbol Parameter Value Unit V Collector-Base Voltage -60 V CBO V Collector-Emitter Voltage -60 V CEO VEBO Emitter-Base Voltage -4 V I Collector Current -500 mA C P Colle