Биполярный транзистор KRX102U - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KRX102U
Тип материала: Si
Полярность: Pre-Biased-NPN*PNP
Встроенный резистор цепи смещения R1 = 47 kOhm
Встроенный резистор цепи смещения R2 = 47 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: USV
KRX102U Datasheet (PDF)
krx102u.pdf
KRX102USEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURES B1Including two devices in USV.1 5DIM MILLIMETERS_(Ultra Super mini type with 5 leads.) A 2.00 + 0.202 _A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D_B1 1.25 + 0.1Simplify circuit desi
krx102f.pdf
KRX102FSEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. BINTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.B1FEATURES1 5Including two devices in TFSV.DIM MILLIMETERS(Thin Fine Pitch Super mini 5pin Package.)2 _+A 1.0 0.05_+A1 0.7 0.05With Built-in bias resistors. _+B 1.0 0.053_Simplify circuit design. 4+B1
krx102e.pdf
KRX102ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BB1FEATURESIncluding two devices in TESV.(Thin Extreme Super mini type with 5 pin.)1 5 DIM MILLIMETERS_A 1.6 0.05+With Built-in bias resistors. _+A1 1.0 0.052_+B 1.6 0.05Simplify circuit design. _+B1 1.2
krx101u.pdf
KRX101USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURES B1Including two devices in USV.1 5DIM MILLIMETERS_(Ultra Super mini type with 5 leads.) A 2.00 + 0.202 _A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D_B1 1.25 + 0.1Simplify circuit design. C
krx103u.pdf
KRX103USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURES B1Including two devices in USV.1 5DIM MILLIMETERS_(Ultra Super mini type with 5 leads.) A 2.00 + 0.202 _A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D_B1 1.25 + 0.1Simplify circuit desig
krx105u.pdf
KRX105USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURES B1Including two devices in USV.1 5DIM MILLIMETERS_(Ultra Super mini type with 5 leads.) A 2.00 + 0.202 _A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D_B1 1.25 + 0.1Simplify circuit desig
krx104u.pdf
KRX104USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURES B1Including two devices in USV.1 5DIM MILLIMETERS_(Ultra Super mini type with 5 leads.) A 2.00 + 0.202 _A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D_B1 1.25 + 0.1Simplify circuit desig
krx101e.pdf
KRX101ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BB1FEATURESIncluding two devices in TESV.(Thin Extereme Super mini type with 5 pin.)1 5 DIM MILLIMETERS_A 1.6 0.05+With Built-in bias resistors. _+A1 1.0 0.052_+B 1.6 0.05Simplify circuit design. _+B1 1.2
krx105e.pdf
KRX105ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BB1FEATURESIncluding two devices in TESV.(Thin Extreme Super mini type with 5 pin.)1 5 DIM MILLIMETERS_A 1.6 0.05+With Built-in bias resistors. _+A1 1.0 0.052_+B 1.6 0.05Simplify circuit design. _+B
krx103e.pdf
KRX103ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BB1FEATURESIncluding two devices in TESV.(Thin Extreme Super mini type with 5 pin.)1 5 DIM MILLIMETERS_A 1.6 0.05+With Built-in bias resistors. _+A1 1.0 0.052_+B 1.6 0.05Simplify circuit design. _+B1 1.2
krx104e.pdf
KRX104ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BB1FEATURESIncluding two devices in TESV.(Thin Extreme Super mini type with 5 pin.)1 5 DIM MILLIMETERS_A 1.6 0.05+With Built-in bias resistors. _+A1 1.0 0.052_+B 1.6 0.05Simplify circuit design. _+B1 1.2
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
