Биполярный транзистор KRX205U
Даташит. Аналоги
Наименование производителя: KRX205U
Тип материала: Si
Полярность: Pre-Biased-NPN*PNP
Встроенный резистор цепи смещения R1 = 4.7 kOhm
Встроенный резистор цепи смещения R2 = 4.7 kOhm
Соотношение сопротивлений R1/R2 = 1
Максимальная рассеиваемая мощность (Pc): 0.2
W
Макcимально допустимое напряжение коллектор-база (Ucb): 50
V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50
V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5
V
Макcимальный постоянный ток коллектора (Ic): 0.1
A
Предельная температура PN-перехода (Tj): 150
°C
Граничная частота коэффициента передачи тока (ft): 250
MHz
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора:
US6
- подбор биполярного транзистора по параметрам
KRX205U
Datasheet (PDF)
..1. Size:379K kec
krx205u.pdf 
KRX205USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit des
8.1. Size:377K kec
krx205e.pdf 
KRX205ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit desi
9.1. Size:382K kec
krx207u.pdf 
KRX207USEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit de
9.2. Size:382K kec
krx208u.pdf 
KRX208USEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit de
9.3. Size:44K kec
krx203u.pdf 
KRX203USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design.
9.4. Size:382K kec
krx206u.pdf 
KRX206USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit des
9.5. Size:45K kec
krx201e.pdf 
KRX201ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
9.6. Size:44K kec
krx202e.pdf 
KRX202ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
9.7. Size:44K kec
krx208e.pdf 
KRX208ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
9.8. Size:44K kec
krx209e.pdf 
KRX209ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
9.9. Size:45K kec
krx202u.pdf 
KRX202USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design.
9.10. Size:44K kec
krx203e.pdf 
KRX203ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
9.11. Size:46K kec
krx201u.pdf 
KRX201USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design.
9.12. Size:44K kec
krx207e.pdf 
KRX207ESEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
9.13. Size:45K kec
krx204e.pdf 
KRX204ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
9.14. Size:46K kec
krx204u.pdf 
KRX204USEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design.
9.15. Size:45K kec
krx206e.pdf 
KRX206ESEMICONDUCTORTECHNICAL DATA EPITAXIAL PLANAR NPN/PNP TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BB1FEATURESIncluding two devices in TES6.1 6 DIM MILLIMETERS(Thin Extreme Super mini type with 6 Pin.) _A 1.6 + 0.05_A1 1.0 + 0.05With Built-in bias resistors. 52_B 1.6 + 0.05_B1 1.2 + 0.05Simplify circuit design.
9.16. Size:44K kec
krx209u.pdf 
KRX209USEMICONDUCTOREPITAXIAL PLANAR NPN/PNP TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION.BFEATURESB1Including two devices in US6.DIM MILLIMETERS1 6_(Ultra Super mini type with 6 leads.) A 2.00 + 0.20_2 5 A1 1.3 + 0.1With Built-in bias resistors. _B 2.1 + 0.13 4 D _B1 1.25 + 0.1Simplify circuit design.
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History: STW2040
