Справочник транзисторов. KRC112M

 

Биполярный транзистор KRC112M - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: KRC112M
   Тип материала: Si
   Полярность: Pre-Biased-NPN
   Встроенный резистор цепи смещения R1 = 100 kOhm
   Максимальная рассеиваемая мощность (Pc): 0.4 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 250 MHz
   Статический коэффициент передачи тока (hfe): 120
   Корпус транзистора: TO-92M

 Аналоги (замена) для KRC112M

 

 

KRC112M Datasheet (PDF)

 9.1. Size:47K  kec
krc110-krc114.pdf

KRC112M KRC112M

SEMICONDUCTOR KRC110~KRC114EPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. B CFEATURESWith Built-in Bias Resistors.Simplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27EQUIVALENT CIRCUIT

 9.2. Size:404K  kec
krc116-krc122.pdf

KRC112M KRC112M

SEMICONDUCTOR KRC116~KRC122TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONB CFEATURESWith Built-in Bias Resistors.Simplify Circuit Design.Reduce a Quantity of Parts and Manufacturing Process.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXGC 3.70 MAXDD 0.45E 1.00F 1.27G 0.85H 0.45_H

 9.3. Size:391K  kec
krc110m-krc114m.pdf

KRC112M KRC112M

SEMICONDUCTOR KRC110M~KRC114MEPITAXIAL PLANAR NPN TRANSISTORTECHNICAL DATASWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. BFEATURESWith Built-in Bias Resistors.Simplify Circuit Design.DIM MILLIMETERSOA 3.20 MAXReduce a Quantity of Parts and Manufacturing Process.HM B 4.30 MAXC 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_+G 14.

 9.4. Size:349K  kec
krc119s.pdf

KRC112M KRC112M

SEMICONDUCTOR KRC119STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONFEATURESEWith Built-in Bias Resistors. L B LDIM MILLIMETERSSimplify Circuit Design._+A 2.93 0.20B 1.30+0.20/-0.15Reduce a Quantity of Parts and Manufacturing Process.C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G

 9.5. Size:437K  kec
krc116m-krc122m.pdf

KRC112M KRC112M

SEMICONDUCTOR KRC116M~KRC122MTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONBFEATURESWith Built-in Bias Resistors.DIM MILLIMETERSOSimplify Circuit Design.A 3.20 MAXHM B 4.30 MAXReduce a Quantity of Parts and Manufacturing Process.C 0.55 MAX_D 2.40 + 0.15E 1.27F 2.30C_+G 14.00 0

 9.6. Size:428K  kec
krc116s-krc122s.pdf

KRC112M KRC112M

SEMICONDUCTOR KRC116S~KRC122STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION.INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONEL B LFEATURESDIM MILLIMETERS_+A 2.93 0.20With Built-in Bias Resistors.B 1.30+0.20/-0.15Simplify Circuit Design. C 1.30 MAX23 D 0.40+0.15/-0.05Reduce a Quantity of Parts and Manufacturing Process.E 2.40+0.30/-0.2

 9.7. Size:393K  kec
krc110s-krc114s.pdf

KRC112M KRC112M

SEMICONDUCTOR KRC110S~KRC114STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORSWITCHING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. EL B LFEATURESDIM MILLIMETERSWith Built-in Bias Resistors. _+A 2.93 0.20B 1.30+0.20/-0.15Simplify Circuit Design.C 1.30 MAX23 D 0.40+0.15/-0.05Reduce a Quantity of Parts and Manufacturing Process.E 2.40+0.30/-

 9.8. Size:812K  kexin
krc110s-114s.pdf

KRC112M KRC112M

SMD Type TransistorsNPN TransistorsKRC110S ~ KRC114SSOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features With Built in Bias Resistors Simplify Circuit Design1 2 Reduce a Quantity of Parts and Manufaturing Process+0.1+0.050.95-0.1 0.1 -0.011.9+0.1-0.1 Digital Transistors1.BaseC2.Emitter3.collectorR1BE Absolute Maximum Ratin

 9.9. Size:853K  kexin
krc116s-122s.pdf

KRC112M KRC112M

SMD Type TransistorsNPN TransistorsKRC116S ~ KRC122SSOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features With Built in Bias Resistors Simplify Circuit Design 1 2+0.1+0.050.95-0.1 0.1-0.01 Reduce a Quantity of Parts and Manufaturing Process+0.11.9-0.1 Digital Transistors1.IN2.Common3.OUTOUTR1INR2COMMON Absolute Maximum Rat

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