Справочник транзисторов. 2N604A

 

Биполярный транзистор 2N604A - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N604A
   Тип материала: Ge
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.12 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 2 V
   Макcимальный постоянный ток коллектора (Ic): 0.015 A
   Предельная температура PN-перехода (Tj): 90 °C
   Граничная частота коэффициента передачи тока (ft): 50 MHz
   Ёмкость коллекторного перехода (Cc): 2 pf
   Статический коэффициент передачи тока (hfe): 60
   Корпус транзистора: TO5

 Аналоги (замена) для 2N604A

 

 

2N604A Datasheet (PDF)

 9.1. Size:251K  motorola
2n6049.pdf

2N604A
2N604A

 9.2. Size:241K  motorola
2n6040 2n6041 2n6042 2n6043 2n6044 2n6045.pdf

2N604A
2N604A

Order this documentMOTOROLAby 2N6040/DSEMICONDUCTOR TECHNICAL DATAPNPPlastic Medium-Power2N6040Complementary SiliconTransistorsthru. . . designed for generalpurpose amplifier and lowspeed switching applications.*2N6042 High DC Current Gain NPNhFE = 2500 (Typ) @ IC = 4.0 Adc CollectorEmitter Sustaining Voltage @ 100 mAdc 2N6043VCEO(sus

 9.3. Size:301K  onsemi
2n6040g 2n6042g 2n6043g 2n6045g.pdf

2N604A
2N604A

PNP - 2N6040, 2N6042,NPN - 2N6043, 2N6045Plastic Medium-PowerComplementary SiliconTransistorswww.onsemi.comPlastic medium-power complementary silicon transistors aredesigned for general-purpose amplifier and low-speed switchingDARLINGTON, 8 AMPERESapplications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain - hFE = 2500 (Typ) @ IC = 4.0 Adc60 -

 9.4. Size:83K  onsemi
2n6040g 2n6040g 2n6045g.pdf

2N604A
2N604A

PNP - 2N6040, 2N6042,NPN - 2N6043, 2N60452N6043 and 2N6045 are Preferred DevicesPlastic Medium-PowerComplementary SiliconTransistorsPlastic medium-power complementary silicon transistors aredesigned for general-purpose amplifier and low-speed switchingDARLINGTON, 8 AMPERESapplications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain - hFE = 2500 (

 9.5. Size:83K  onsemi
2n6045g.pdf

2N604A
2N604A

PNP - 2N6040, 2N6042,NPN - 2N6043, 2N60452N6043 and 2N6045 are Preferred DevicesPlastic Medium-PowerComplementary SiliconTransistorsPlastic medium-power complementary silicon transistors aredesigned for general-purpose amplifier and low-speed switchingDARLINGTON, 8 AMPERESapplications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain - hFE = 2500 (

 9.6. Size:83K  onsemi
2n6042g.pdf

2N604A
2N604A

PNP - 2N6040, 2N6042,NPN - 2N6043, 2N60452N6043 and 2N6045 are Preferred DevicesPlastic Medium-PowerComplementary SiliconTransistorsPlastic medium-power complementary silicon transistors aredesigned for general-purpose amplifier and low-speed switchingDARLINGTON, 8 AMPERESapplications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain - hFE = 2500 (

 9.7. Size:83K  onsemi
2n6043g 2n6043g 2n6042g.pdf

2N604A
2N604A

PNP - 2N6040, 2N6042,NPN - 2N6043, 2N60452N6043 and 2N6045 are Preferred DevicesPlastic Medium-PowerComplementary SiliconTransistorsPlastic medium-power complementary silicon transistors aredesigned for general-purpose amplifier and low-speed switchingDARLINGTON, 8 AMPERESapplications.COMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS High DC Current Gain - hFE = 2500 (

 9.8. Size:199K  mospec
2n6040-45.pdf

2N604A
2N604A

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 9.9. Size:199K  inchange semiconductor
2n6045g.pdf

2N604A
2N604A

INCHANGE Semiconductorisc Silicon NPN Darlington Power Transistor 2N6045GDESCRIPTIONHigh DC Current Gain-: h = 1000(Min)@ I = 3AFE CCollector-Emitter Sustaining Voltage-: V = 100V(Min)CEO(SUS)Low Collector-Emitter Saturation Voltage-: V = 2.0V(Max)@ I = 3ACE(sat) CComplement to Type 2N6042GPb-Free packageMinimum Lot-to-Lot variations for robust device

 9.10. Size:130K  inchange semiconductor
2n6049.pdf

2N604A
2N604A

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6049 DESCRIPTION With TO-66 package Complement to type 2N3054A APPLICATIONS Designed for general purpose switching and amplifier applications PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-66) and symbol3 CollectorAbsolute maximum ratings(Ta=25) SY

 9.11. Size:73K  inchange semiconductor
2n6043 2n6044 2n6045.pdf

2N604A
2N604A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6043 2N6044 2N6045 DESCRIPTION With TO-220C package Complement to type 2N6040/6041/6042 DARLINGTON High DC current gain Low collector saturation voltage APPLICATIONS For general-purpose amplifier and low-speed switching applications PINNING PIN DESCRIPTION1 Base Collector;co

Другие транзисторы... 2N6043 , 2N6044 , 2N6045 , 2N6046 , 2N6047 , 2N6048 , 2N6049 , 2N6049E , TIP2955 , 2N605 , 2N6050 , 2N6051 , 2N6052 , 2N6053 , 2N6054 , 2N6055 , 2N6056 .

 

 
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