FM120-MWILLAS8050SLT1THRU SOT-23 Plastic-Encapsulate Transistors FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProdPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.TRANSISTOR (NPN) SOD-123H Low profile surface mounted application i

LESHAN RADIO COMPANY, LTD.L8050PLT1GGeneral Purpose TransistorsSeriesNPN SiliconS-L8050PLT1GFEATURESeries High current capacity in compact package.IC = 0.8A. Epitaxial planar type. 3 NPN complement: L8050 Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site2and Control Change Requirements; AEC-Q101 Qualified and PPA

LESHAN RADIO COMPANY, LTD.L8050PLT1GGeneral Purpose TransistorsSeriesNPN SiliconS-L8050PLT1GFEATURESeries High current capacity in compact package.IC = 0.8A. Epitaxial planar type. 3 NPN complement: L8050 Pb-Free Package is available.1 S- Prefix for Automotive and Other Applications Requiring Unique Site2and Control Change Requirements; AEC-Q101 Qualified and PPA

MCCMicro Commercial ComponentsTM8050SS-C20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913118050SS-DPhone: (818) 701-4933Fax: (818) 701-4939Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25OC) of Power Dissipation.NPN Silicon Collector-current 1.5A Collector-base Voltage 40VTransistors Operating and storag

UNISONIC TECHNOLOGIES CO., LTD 8050S NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC 8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. FEATURES *Collector current up to 700mA *Collector-Emitter voltage up to 20V * Complem

UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE(sat) performance, and the transistor elements are independent, eliminating interference. FEATURES * Low VCE(sat), VCE(sat)=40mV (typ.)@IC / IB = 50mA / 2.5mA

UTC 8050S NPN EPITAXIAL SILICON TRANSISTORLOW VOLTAGE HIGH CURRENTSMALL SIGNAL NPNTRANSISTORDESCRIPTIONThe UTC8050S is a low voltage high current small signalNPN transistor, designed for Class B push-pull audioamplifier and general purpose applications. FEATURES*Collector current up to 800mA*Collector-Emitter voltage up to 20 VTO-92*Complementary to UTC 8550S 1:EMITTER

@vic AV8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION 3The @vic AV8050S is a low voltage high current small signal 1NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. 2FEATURES *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complementary to @v

8050SST 1.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. G HEmitter Collector Base JCLASSIFICATION OF hFE (1) A DMillimeterProduct-Rank 8050SST-B 8050SST-C 8050SST-DREF.B Min. Max.A 4.40

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 M8050S TRANSISTOR (NPN) 1.EMITTER FEATURES Power Dissipation 2. COLLECTOR3. BASEMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Curr

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050SS TRANSISTOR (NPN) FEATURES TO 92 General Purpose Switching and Amplification. 1. EMITTER 2. COLLECTOR 3. BASE Equivalent Circuit 8050SS=Device code 8050SS Solid dot=Green molding compound device, Z if none,the normal device Z=Rank of hFEXXX=Code1

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors JC TTO-92 8050S TRANSISTOR (NPN) FEATURES 1.EMITTER Complimentary to 8550S 2.COLLECTOR Collector Current: IC=0.5A 3.BASEMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol ParameterValue UnitVCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO

SEMICONDUCTOR MPS8050SCTECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATUREComplementary to MPS8550SC.MAXIMUM RATING (Ta=25)CHARACTERISTIC SYMBOL RATING UNITVCBOCollector-Base Voltage 40 VVCEOCollector-Emitter Voltage 25 VVEBOEmitter-Base Voltage 5 VICCollector Current 1,200 mAPC *Collector Power Dissipation 350 mWTjJunction Te

SEMICONDUCTOR KTC8050STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATUREEL B LComplementary to KTC8550S.DIM MILLIMETERS_A 2.93 0.20+B 1.30+0.20/-0.15C 1.30 MAX23 D 0.45+0.15/-0.05E 2.40+0.30/-0.20MAXIMUM RATING (Ta=25 )1G 1.90H 0.95CHARACTERISTIC SYMBOL RATING UNITJ 0.13+0.10/-0.05K 0.00 ~ 0.10VCBOCollector-Base Voltag

SEMICONDUCTOR MPS8050STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORHIGH CURRENT APPLICATION. FEATUREEL B LComplementary to MPS8550S.DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201G 1.90MAXIMUM RATING (Ta=25)H 0.95J 0.13+0.10/-0.05CHARACTERISTIC SYMBOL RATING UNITK 0.00 ~ 0.10QL 0.55VCBO P PCo

8050S(NPN) TO-92 Bipolar TransistorsTO-92 1. EMITTER 4.455.21 2. COLLECTOR 3. BASE 4.322.92 5.33MINFeaturesComplimentary to 8550S 3.43Collector current: IC=0.5A MIN2.412.67MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter3.18Value Units2.034.192.67VCBO Collector-Base Voltage 40 V 1.141.40VCEO Collector-Emitter Volt

Spec. No. : HE6116HI-SINCERITYIssued Date : 1997.09.08Revised Date : 2005.01.20MICROELECTRONICS CORP.Page No. : 1/5HA8050SNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HA8550S is designed for general purpose amplifier applications.TO-92Features High DC Current Gain (hFE=100~500 at IC=150mA) Complementary to HA8550SAbsolute Maximum Ratings Maximum Temperatu

Spec. No. : HE6110HI-SINCERITYIssued Date : 1992.09.30Revised Date : 2004.07.26MICROELECTRONICS CORP.Page No. : 1/5HE8050SNPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HE8050S is designed for general purpose amplifier applications.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ...................................................................

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC8050S APPLICATIONS Audio Frequency Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TO-92 TjJuncttion Temperature150PCCollector Dissipation

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. H8050S APPLICATIONS Audio Frequency Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TO-92 TjJuncttion Temperature150PCCollector Dissipation

SMD Type TransistorsSMD TypeNPN TransistorsKST8050SSOT-23Unit: mm2.9+0.1-0.1+0.10.4-0.13FeaturesCollector Current: IC=0.5A1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-Base Voltage VCBO 40 VCollector-Emitter Voltage VCEO 25 VEmitter-Base Voltage VEBO 5

TRANSISTOR S8050SDB MAIN CHARACTERISTICS FEATURES IC 500mA Epitaxial silicon VCEO 27V High switching speed PC 625mW RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency power

K8050S NPN Silicon Transistor 2018.09.07 2018.09.07 2018.09.07 2018.09.07 1 000 2017.11.02 2 001 2018.08.22 3 TAPING 003 2018.09.07 K8050S NPN S