8050SLT1 - описание и поиск аналогов

FM120-M WILLAS 8050SLT1THRU SOT-23 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Prod Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. TRANSISTOR (NPN) SOD-123H Low profile surface mounted application i

LESHAN RADIO COMPANY, LTD. L8050PLT1G General Purpose Transistors Series NPN Silicon S-L8050PLT1G FEATURE Series High current capacity in compact package. IC = 0.8A. Epitaxial planar type. 3 NPN complement L8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2 and Control Change Requirements; AEC-Q101 Qualified and PPA

LESHAN RADIO COMPANY, LTD. L8050PLT1G General Purpose Transistors Series NPN Silicon S-L8050PLT1G FEATURE Series High current capacity in compact package. IC = 0.8A. Epitaxial planar type. 3 NPN complement L8050 Pb-Free Package is available. 1 S- Prefix for Automotive and Other Applications Requiring Unique Site 2 and Control Change Requirements; AEC-Q101 Qualified and PPA

MCC Micro Commercial Components TM 8050SS-C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 8050SS-D Phone (818) 701-4933 Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors Capable of 1.0Watts(Tamb=25OC) of Power Dissipation. NPN Silicon Collector-current 1.5A Collector-base Voltage 40V Transistors Operating and storag

UNISONIC TECHNOLOGIES CO., LTD 8050S NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC 8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. FEATURES *Collector current up to 700mA *Collector-Emitter voltage up to 20V * Complem

UNISONIC TECHNOLOGIES CO., LTD MMDT8050S Preliminary NPN EPITAXIAL SILICON TRANSISTOR LOW VCESAT NPN EPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC MMDT8050S is a Dual NPN epitaxial planar transistor. It has low VCE(sat) performance, and the transistor elements are independent, eliminating interference. FEATURES * Low VCE(sat), VCE(sat)=40mV (typ.)@IC / IB = 50mA / 2.5mA

UTC 8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION The UTC8050S is a low voltage high current small signal NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. FEATURES *Collector current up to 800mA *Collector-Emitter voltage up to 20 V TO-92 *Complementary to UTC 8550S 1 EMITTER

@vic AV8050S NPN EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR DESCRIPTION 3 The @vic AV8050S is a low voltage high current small signal 1 NPN transistor, designed for Class B push-pull audio amplifier and general purpose applications. 2 FEATURES *Collector current up to 700mA *Collector-Emitter voltage up to 20 V *Complementary to @v

8050SST 1.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES General Purpose Switching and Amplification. G H Emitter Collector Base J CLASSIFICATION OF hFE (1) A D Millimeter Product-Rank 8050SST-B 8050SST-C 8050SST-D REF. B Min. Max. A 4.40

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 M8050S TRANSISTOR (NPN) 1.EMITTER FEATURES Power Dissipation 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 6 V IC Collector Curr

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 8050SS TRANSISTOR (NPN) FEATURES TO 92 General Purpose Switching and Amplification. 1. EMITTER 2. COLLECTOR 3. BASE Equivalent Circuit 8050SS=Device code 8050SS Solid dot=Green molding compound device, Z if none,the normal device Z=Rank of hFE XXX=Code 1

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors JC T TO-92 8050S TRANSISTOR (NPN) FEATURES 1.EMITTER Complimentary to 8550S 2.COLLECTOR Collector Current IC=0.5A 3.BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO

SEMICONDUCTOR MPS8050SC TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE Complementary to MPS8550SC. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1,200 mA PC * Collector Power Dissipation 350 mW Tj Junction Te

SEMICONDUCTOR KTC8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to KTC8550S. DIM MILLIMETERS _ A 2.93 0.20 + B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.45+0.15/-0.05 E 2.40+0.30/-0.20 MAXIMUM RATING (Ta=25 ) 1 G 1.90 H 0.95 CHARACTERISTIC SYMBOL RATING UNIT J 0.13+0.10/-0.05 K 0.00 0.10 VCBO Collector-Base Voltag

SEMICONDUCTOR MPS8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to MPS8550S. DIM MILLIMETERS _ + A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 G 1.90 MAXIMUM RATING (Ta=25 ) H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 0.10 Q L 0.55 VCBO P P Co

8050S(NPN) TO-92 Bipolar Transistors TO-92 1. EMITTER 4.45 5.21 2. COLLECTOR 3. BASE 4.32 2.92 5.33 MIN Features Complimentary to 8550S 3.43 Collector current IC=0.5A MIN 2.41 2.67 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter 3.18 Value Units 2.03 4.19 2.67 VCBO Collector-Base Voltage 40 V 1.14 1.40 VCEO Collector-Emitter Volt

Spec. No. HE6116 HI-SINCERITY Issued Date 1997.09.08 Revised Date 2005.01.20 MICROELECTRONICS CORP. Page No. 1/5 HA8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HA8550S is designed for general purpose amplifier applications. TO-92 Features High DC Current Gain (hFE=100 500 at IC=150mA) Complementary to HA8550S Absolute Maximum Ratings Maximum Temperatu

Spec. No. HE6110 HI-SINCERITY Issued Date 1992.09.30 Revised Date 2004.07.26 MICROELECTRONICS CORP. Page No. 1/5 HE8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050S is designed for general purpose amplifier applications. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature ...................................................................

SMD Type Transistors SMD Type NPN Transistors KST8050S SOT-23 Unit mm 2.9+0.1 -0.1 +0.1 0.4-0.1 3 Features Collector Current IC=0.5A 1 2 +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 5

K8050S NPN Silicon Transistor 2018.09.07 2018.09.07 2018.09.07 2018.09.07 1 000 2017.11.02 2 001 2018.08.22 3 TAPING 003 2018.09.07 K8050S NPN S