MMBT2222AWT1. Аналоги и основные параметры

Наименование производителя: MMBT2222AWT1

Тип материала: Si

Полярность: NPN

Предельные значения

Максимальная рассеиваемая мощность (Pc): 0.15 W

Макcимально допустимое напряжение коллектор-база (Ucb): 75 V

Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V

Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V

Макcимальный постоянный ток коллектора (Ic): 0.6 A

Предельная температура PN-перехода (Tj): 150 °C

Электрические характеристики

Граничная частота коэффициента передачи тока (ft): 300 MHz

Ёмкость коллекторного перехода (Cc): 8 pf

Статический коэффициент передачи тока (hFE): 100

Корпус транзистора: SOT-323

 Аналоги (замена) для MMBT2222AWT1

- подборⓘ биполярного транзистора по параметрам

 

MMBT2222AWT1 даташит

 ..1. Size:290K  willas
 mmbt2222awt1.pdf pdf_icon

MMBT2222AWT1

FM120-M WILLAS THRU MMBT2222AWT1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V General Purpose Transistors SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to NPN Silic

 0.1. Size:72K  motorola
 mmbt2222awt1rev0.pdf pdf_icon

MMBT2222AWT1

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT2222AWT1/D Preliminary Information MMBT2222AWT1 General Purpose Transistor Motorola Preferred Device NPN Silicon These transistors are designed for general purpose amplifier applica- tions. They are housed in the SOT 323/SC 70 package which is designed for low power surface mount applications. COLLECTOR 3 3 1 1

 0.2. Size:125K  onsemi
 mmbt2222awt1g smmbt2222awt1g.pdf pdf_icon

MMBT2222AWT1

MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Features AEC-Q101 Qualified and PPAP Capable SC-70 S Prefix for Automotive and Other Applications Requiring Uni

 0.3. Size:129K  onsemi
 mmbt2222awt1g.pdf pdf_icon

MMBT2222AWT1

MMBT2222AWT1G, SMMBT2222AWT1G General Purpose Transistor NPN Silicon These transistors are designed for general purpose amplifier http //onsemi.com applications. They are housed in the SOT-323/SC-70 package which is designed for low power surface mount applications. Features AEC-Q101 Qualified and PPAP Capable SC-70 S Prefix for Automotive and Other Applications Requiring Uni

ПОКАЗАТЬ ЕЩЁ

Другие транзисторы: 9014SLT1, BC807-40WT1, BC817-40WT1, BCW66GLT1, BCW68GLT1, MMBT2222ADW1T1, MMBT2222ALT1, MMBT2222ATT1, MJE350, MMBT2907ADW1T1, MMBT2907AWT1, MMBT3904DW1T1, MMBT3904SLT1, MMBT3904TT1, MMBT3904WT1, MMBT3906DW1T1, MMBT3906TT1