MMBT4403WT1 - Даташиты. Аналоги. Основные параметры

MMBT4403WT1GSwitching TransistorPNP SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model; 4 kV,Machine Model; 400 VCOLLECTOR These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS3Compliant1BASEMAXIMUM RATINGS 2EMITTERRating Symbol Value UnitCollector -- Emitter Voltage VCEO --40 Vdc3Collector -- Base

FM120-MWILLASTHRUMMBT4403WT1General Purpose TransistorsFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures BatcPNP etteh process design, excellent power dissipation offersSilicon b r reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to

MMBT4403WT1GSwitching TransistorPNP SiliconFeatures Moisture Sensitivity Level: 1http://onsemi.com ESD Rating: Human Body Model; 4 kV,Machine Model; 400 VCOLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS3Compliant1BASEMAXIMUM RATINGS 2EMITTERRating Symbol Value UnitCollector-Emitter Voltage VCEO -40 Vdc3Collector-Base Voltage

MMBT4403WPNP SiliconElektronische BauelementeSwitching TransistorRoHS Compliant ProductA SOT-323LDim Min MaxCOLLECTORA 1.800 2.2003STop ViewBB 1.150 1.3503C 0.800 1.0001BASED 0.300 0.400V G1G 1.200 1.40022H 0.000 0.100CEMITTERJ 0.100 0.250HJDKK 0.350 0.500L 0.590 0.720S 2.000 2.400MAXIMUM RATINGSV 0.280 0.420Rating Symb

SMD Type orSMD Type TransistICsPNP Transistors MMBT4403W (KMBT4403W)FeaturesSwitching transistors. Collector Current Capability IC=-600mA Collector Emitter Voltage VCEO=-40V1 Emitter2 Base3 CollectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-emitter voltage VCEO -40 VCollector-base voltage VCBO -40 VEmitter-base voltage VEBO -5 V