HLB125HE datasheet и подбор замены

 ..1. Size:50K  hsmc
 hlb125he.pdf 

Spec. No. HE200214 HI-SINCERITY Issued Date 2002.09.01 Revised Date 2004.11.08 MICROELECTRONICS CORP. Page No. 1/5 HLB125HE NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB125HE is designed for lighting applications and low switch-mode power supplies. And it is high voltage capability and high switching speeds. TO-220 Features High Speed Switching Low Saturation

 9.1. Size:130K  utc
 hlb121.pdf 

UTC HLB121 NPN EPITAXIAL SILICON TRANSISTOR NPN TRIPLE DIFFUSED PLANAR TYPE HIGH VOLTAGE TRANSISTOR DESCRIPTION The UTC HLB121 is a medium power transistor designed for use in switching applications. FEATURES 1 * High breakdown voltage * Low collector saturation voltage * Fast switching speed TO-251 1 BASE 2 COLLECTOR 3 EMITTER *Pb-free plating product number HLB121L

 9.2. Size:47K  hsmc
 hlb123d.pdf 

Spec. No. HE6603 HI-SINCERITY Issued Date 1993.03.15 Revised Date 2005.08.16 MICROELECTRONICS CORP. Page No. 1/5 HLB123D NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123D is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features TO-126ML High Speed Switching Low Saturation Voltage High Reliability Absolut

 9.3. Size:51K  hsmc
 hlb122i.pdf 

Spec. No. HE9030 HI-SINCERITY Issued Date 1998.07.01 Revised Date 2005.07.13 MICROELECTRONICS CORP. Page No. 1/5 HLB122I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB122I is a medium power transistor designed for use in switching applications. TO-251 Features High breakdown voltage Low collector saturation voltage Fast switching s

 9.4. Size:46K  hsmc
 hlb124e.pdf 

Spec. No. HE6727 HI-SINCERITY Issued Date 1998.07.01 Revised Date 2004.11.03 MICROELECTRONICS CORP. Page No. 1/5 HLB124E NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB124E is designed for high voltage, high speed switching inductive circuits, and amplifier applications. Features TO-220 High Speed Switching Low Saturation Voltage High Reliability Absolute

 9.5. Size:45K  hsmc
 hlb120a.pdf 

Spec. No. HE6412 HI-SINCERITY Issued Date 1998.12.01 Revised Date 2005.02.05 MICROELECTRONICS CORP. Page No. 1/4 HLB120A NPN Triple Diffused Planar Type High Voltage Transistors Description The HLB120A is a medium power transistor designed for use in switching applications. TO-92 Features High Breakdown Voltage Low Collector Saturation Voltage Fast Switching S

 9.6. Size:44K  hsmc
 hlb121i.pdf 

Spec. No. HE9027 HI-SINCERITY Issued Date 1996.11.06 Revised Date 2005.07.13 MICROELECTRONICS CORP. Page No. 1/4 HLB121I NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121I is a medium power transistor designed for use in switching applications. TO-251 Features High breakdown voltage Low collector saturation voltage Fast switching s

 9.7. Size:40K  hsmc
 hlb123t.pdf 

Spec. No. HT200402 HI-SINCERITY Issued Date 1993.05.15 Revised Date 2006.02.20 MICROELECTRONICS CORP. Page No. 1/4 HLB123T NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123T is designed for high voltage. High speed switching inductive circuits and amplifier applications. Features TO-126 High Speed Switching Low Saturation Voltage High Reliability Absolut

 9.8. Size:47K  hsmc
 hlb121a.pdf 

Spec. No. HA200112 HI-SINCERITY Issued Date 2001.04.01 Revised Date 2007.09.29 MICROELECTRONICS CORP. Page No. 1/4 HLB121A NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121A is a medium power transistor designed for use in switching applications. TO-92 Features High breakdown voltage Low collector saturation voltage Fa

 9.9. Size:38K  hsmc
 hlb121d.pdf 

Spec. No. HD200205 HI-SINCERITY Issued Date 2002.05.01 Revised Date 2005.08.16 MICROELECTRONICS CORP. Page No. 1/4 HLB121D NPN Triple Diffused Planar Type High Voltage Transistor Description The HLB121D is a medium power transistor designed for use in switching applications. TO-126ML Features High breakdown voltage Low collector saturation voltage Fast switchi

 9.10. Size:53K  hsmc
 hlb123i.pdf 

Spec. No. HI200202 HI-SINCERITY Issued Date 2002.06.01 Revised Date 2005.07.13 MICROELECTRONICS CORP. Page No. 1/5 HLB123I NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123I is designed for high voltage. High speed switching inductive circuits and amplifier applications. TO-251 Features High Speed Switching Low Saturation Voltage High Reliability Absolut

 9.11. Size:187K  hsmc
 hlb123sa.pdf 

Spec. No. HA200601 HI-SINCERITY Issued Date 2006.12.01 Revised Date 2009.07,02 MICROELECTRONICS CORP. Page No. 1/6 HLB123SA NPN EPITAXIAL PLANAR TRANSISTOR Description High Voltage, High Speed Power Switch TO-92 Switch Regulators PWM Inverters and Motor Controls Solenoid and Relay Drivers Deflection Circuits Absolute Maximum Ratings Pa