HM44 datasheet и подбор замены

 ..1. Size:37K  hsmc
 hm44.pdf 

Spec. No. HE9524 HI-SINCERITY Issued Date 1998.01.06 Revised Date 2005.09.22 MICROELECTRONICS CORP. Page No. 1/4 HM44 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM44 is designed for application requires high voltage. SOT-89 Features High voltage VCEO=400V(min) at IC=1mA High current gain IC=300mA at 25 C Complementary with HM94 Absolute Maximum Ratings

 0.1. Size:100K  chenmko
 chm4416jgp.pdf 

CHENMKO ENTERPRISE CO.,LTD CHM4416JGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power a

 0.2. Size:298K  chenmko
 chm4436jgp.pdf 

CHENMKO ENTERPRISE CO.,LTD CHM4436JGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Exceptional

 0.3. Size:92K  chenmko
 chm4432jgp.pdf 

CHENMKO ENTERPRISE CO.,LTD CHM4432JGP SURFACE MOUNT Dual P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High

 0.4. Size:184K  chenmko
 chm4435ajgp.pdf 

CHENMKO ENTERPRISE CO.,LTD CHM4435AJGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged and reli

 0.5. Size:99K  chenmko
 chm4412jgp.pdf 

CHENMKO ENTERPRISE CO.,LTD CHM4412JGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 7 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power a

 0.6. Size:102K  chenmko
 chm4435bjgp.pdf 

CHENMKO ENTERPRISE CO.,LTD CHM4435BJGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 9 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * High density cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * Rugged and reli

 0.7. Size:77K  chenmko
 chm4450jgp.pdf 

CHENMKO ENTERPRISE CO.,LTD CHM4450JGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 7.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power

 0.8. Size:101K  chenmko
 chm4435azgp.pdf 

CHENMKO ENTERPRISE CO.,LTD CHM4435AZGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-73/SOT-223 FEATURE * Small flat package. (SOT-223 ) 1.65+0.15 * High density cell design for extremely low RDS(ON). 6.50+0.20 0.90+0.05 2.0+

 0.9. Size:68K  chenmko
 chm4426jgp.pdf 

CHENMKO ENTERPRISE CO.,LTD CHM4426JGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power a

 0.10. Size:135K  chenmko
 chm4410bjgp.pdf 

CHENMKO ENTERPRISE CO.,LTD CHM4410BJPT SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 12.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High pow

 0.11. Size:70K  chenmko
 chm4431jgp.pdf 

CHENMKO ENTERPRISE CO.,LTD CHM4431JGP SURFACE MOUNT P-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 5.8 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power

 0.12. Size:99K  chenmko
 chm4410ajgp.pdf 

CHENMKO ENTERPRISE CO.,LTD CHM4410AJGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 10 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) ( ) * Super high dense cell design for extremely low RDS(ON). 4.06 0.160 ( ) 3.70 0.146 * High power

 0.13. Size:1918K  cn vbsemi
 hm4409.pdf 

HM4409 www.VBsemi.tw P-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) TrenchFET Power MOSFET 0.011 at VGS = - 10 V - 13.5 100 % Rg Tested RoHS - 30 29.5 nC COMPLIANT 100 % UIS Tested 0.015 at VGS = - 4.5 V - 11.6 APPLICATIONS Load Switch Notebook Adaptor Switch SO-8 S S 1 8 D S D 2 7 G S

 0.14. Size:1936K  cn vbsemi
 hm4410.pdf 

HM4410 www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) TrenchFET Power MOSFET 0.008 at VGS = 10 V 13 30 6.1 nC Optimized for High-Side Synchronous 0.011 at VGS = 4.5 V 11 Rectifier Operation 100 % Rg Tested 100 % UIS Tested APPLICATIONS Notebook CPU Core - High-Side Switch SO

 0.15. Size:571K  cn hmsemi
 hm4409.pdf 

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -30V,ID = -15A Schematic diagram RDS(ON)

 0.16. Size:664K  cn hmsemi
 hm4441a.pdf 

HM4441A N Channel Enhancement Mode MOSFET SCRIPTION HM4441A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application, noteook power management ane ther bat

 0.17. Size:726K  cn hmsemi
 hm4412a.pdf 

HM4412A N-Channel Enhancement Mode Power MOSFET Description D The HM4412A uses advanced trench technology to provide G excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. S Genera Features Schematic diagram VDS = 30V,ID = 7.0A RDS(ON)

 0.18. Size:368K  cn hmsemi
 hm4447.pdf 

HM4447 Description The HM4447 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features Schematic diagram VDS = -30V,ID = -25A RDS(ON)

 0.19. Size:458K  cn hmsemi
 hm4485.pdf 

HM4485 Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-13A RDS(ON)

 0.20. Size:747K  cn hmsemi
 hm4487b.pdf 

HM4487B P-Channel Enhancement Mode Power MOSFET Description D The HM4487B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. G General Features S VDS =-100V,ID =-3.5A Schematic diagram RDS(ON)

 0.21. Size:668K  cn hmsemi
 hm4485a.pdf 

HM4485A Description The HM4485A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-40V,ID =-17.5A RDS(ON)

 0.22. Size:1694K  cn hmsemi
 hm4486e.pdf 

HM4486E 100VDS 20VGS 3.5A(ID) N-Channel Enha ncement Mode MOSFET Features VDSS=100V VGSS= 20V ID=3.5A Pin Description RDS(ON)=105m (Max.)@VGS=10V RDS(ON)=175m (Max.)@VGS=4.5V ESD protect Reliable and Rugged High Density Cell Design For Ultra Low

 0.23. Size:464K  cn hmsemi
 hm4402c.pdf 

HM4402C N-Channel Enhancement Mode Power MOSFET Description The HM4402C uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =12A Schematic diagram RDS(ON)

 0.24. Size:550K  cn hmsemi
 hm4441.pdf 

P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =-55V,ID =-5A RDS(ON)

 0.25. Size:539K  cn hmsemi
 hm4454.pdf 

HM4454 N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =8A Schematic diagram RDS(ON)

 0.26. Size:1249K  cn hmsemi
 hm4421b.pdf 

HM4421B P-Channel Enhancement Mode Power MOSFET Description The HM4421B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications. General Features VDS =-60V,ID =-6.5A RDS(ON)

 0.27. Size:753K  cn hmsemi
 hm4440a.pdf 

HM4440A N-Channel Enhancement Mode Power MOSFET Description The HM4440A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS=60V,ID=5A Schematic diagram RDS(ON)

 0.28. Size:783K  cn hmsemi
 hm4444.pdf 

HM4444 N-Channel Enhancement Mode Power MOSFET Description The HM4444 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =80V,ID =12.5A RDS(ON)

 0.29. Size:481K  cn hmsemi
 hm4435b.pdf 

HM4435B P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM4435B uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -9.1A RDS(ON)

 0.30. Size:666K  cn hmsemi
 hm4430a.pdf 

HM4430A N-Channel Enhancement Mode Power MOSFET Description The HM4430A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =30V,ID =18A Schematic diagram RDS(ON)

 0.31. Size:547K  cn hmsemi
 hm4407.pdf 

HM4407 P-Channel Enhancement Mode Power MOSFET D Description The HM4407 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID = -12A RDS(ON)

 0.32. Size:593K  cn hmsemi
 hm4480.pdf 

HM4480 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4480 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =40V,ID =10A RDS(ON)

 0.33. Size:637K  cn hmsemi
 hm4412.pdf 

HM4412 N-Channel Enhancement Mode Power MOSFET Description The HM4412 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.This device is suitable for use as a load switch and PWM applications. Genera Features Schematic diagram VDS = 30V,ID = 7.0A RDS(ON)

 0.34. Size:659K  cn hmsemi
 hm4453a.pdf 

HM4453A P-Channel Enhancement Mode Power MOSFET D Description The HM4453A uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a S load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -21A RDS(ON)

 0.35. Size:836K  cn hmsemi
 hm4484.pdf 

HM4484 N-Channel Enhancement Mode Power MOSFET Description The HM4484 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =40V,ID =15A RDS(ON)

 0.36. Size:630K  cn hmsemi
 hm4490.pdf 

HM4490 N-Channel Enhancement Mode Power MOSFET Description The HM4490 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =200V,ID =3.9A RDS(ON)

 0.37. Size:855K  cn hmsemi
 hm4421c.pdf 

HM P-Channel Enhancement Mode Power MOSFET Description The HM uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for use as a load switch or in PWM applications. General Features Schematic diagram VDS =-60V,ID =-5A RDS(ON)

 0.38. Size:622K  cn hmsemi
 hm4468t.pdf 

 0.39. Size:471K  cn hmsemi
 hm4453.pdf 

HM4453 P-Channel Enhancement Mode Power MOSFET D Description The HM4453 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a S load switch or in PWM applications. Schematic diagram General Features VDS = -20V,ID = -9A RDS(ON)

 0.40. Size:827K  cn hmsemi
 hm4486a.pdf 

HM4486A N-Channel Enhancement Mode Power MOSFET Description The HM4486A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =100V,ID =4A RDS(ON)

 0.41. Size:397K  cn hmsemi
 hm4406a.pdf 

HM4406A 30V N-Channel Enhancement-Mode MOSFET 30V N MOS VDS= 30V RDS(ON), Vgs@10V, Ids@12A = 9.0m RDS(ON), Vgs@4.5V, Ids@10A = 12m Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current

 0.42. Size:769K  cn hmsemi
 hm4487a.pdf 

HM4487A P-Channel Enhancement Mode Power MOSFET Description D The HM4487A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. G General Features S VDS =-100V,ID =-7.5A Schematic diagram RDS(ON)

 0.43. Size:465K  cn hmsemi
 hm4410.pdf 

 0.44. Size:527K  cn hmsemi
 hm4443.pdf 

HM4443 P-Channel Enhancement Mode Power MOSFET D Description The HM4443 uses advanced trench technology to G provide excellent RDS(ON), This device is suitable for use as a load switch and battery protection applications. S Schematic diagram General Features VDS = -40V,ID = -5.0A RDS(ON)

 0.45. Size:650K  cn hmsemi
 hm4487.pdf 

HM4487 P-Channel Enhancement Mode Power MOSFET Description D The HM4487 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested. G General Features S VDS =-100V,ID =-4.5A Schematic diagram RDS(ON)

 0.46. Size:706K  cn hmsemi
 hm4437.pdf 

 0.47. Size:686K  cn hmsemi
 hm4453b.pdf 

HM4453B P-Channel Enhancement Mode Power MOSFET Description D The HM4453B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S General Features Schematic diagram VDS = -12V,ID = -9A RDS(ON)

 0.48. Size:2069K  cn hmsemi
 hm4482.pdf 

HM4482 100VDS 20VGS 2.5A(ID) N-Channel Enha ncement Mode MOSFET Features VDSS=100V VGSS= 20V ID=2.5A RDS(ON)=105m (Max.)@VGS=10V RDS(ON)=115m (Max.)@VGS=4.5V ESD protect Reliable and Rugged High Density Cell Design For Ultra Low On-Resistance Switching Time Test Circuit and Waveforms H SOP-8 top view HM4482 HM4482 SOP-8 - - - Rev. A.0

 0.49. Size:577K  cn hmsemi
 hm4485b.pdf 

HM4485B P-Channel Enhancement Mode Power MOSFET Description The HM4485B uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features VDS = -40V,ID = -7.5A Schematic diagram RDS(ON)

 0.50. Size:337K  cn hmsemi
 hm4423.pdf 

HM44 Description The HM44 uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or power management. General Features Schematic diagram VDS = -30V,ID = -2 A RDS(ON)

 0.51. Size:489K  cn hmsemi
 hm4402e.pdf 

HM4402E Description The HM4402E uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =14A RDS(ON)

 0.52. Size:436K  cn hmsemi
 hm4440.pdf 

HM4440 N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4440 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =60V,ID =4.5A RDS(ON)

 0.53. Size:556K  cn hmsemi
 hm4410b.pdf 

HM4410B N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4410B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =12A RDS(ON)

 0.54. Size:771K  cn hmsemi
 hm4450a.pdf 

HM4450A N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4450A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =40V,ID =8.0A RDS(ON)

 0.55. Size:631K  cn hmsemi
 hm4449.pdf 

HM4449 P-Channel Enhancement Mode Power MOSFET D Description The HM4449 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID = -7A RDS(ON)

 0.56. Size:476K  cn hmsemi
 hm4438.pdf 

N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =9A RDS(ON)

 0.57. Size:572K  cn hmsemi
 hm4407a.pdf 

HM4407A P-Channel Enhancement Mode Power MOSFET D Description The HM4407A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate G voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. S Schematic diagram General Features VDS = -30V,ID = -12A RDS(ON)

 0.58. Size:607K  cn hmsemi
 hm4410a.pdf 

HM4410A N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4410A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =12A RDS(ON)

 0.59. Size:403K  cn hmsemi
 hm4430.pdf 

N-Channel Enhancement Mode Power MOSFET DESCRIPTION The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES VDS =30V,ID =18A RDS(ON)

 0.60. Size:564K  cn hmsemi
 hm4452.pdf 

HM4452 N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 100V,ID =10A Schematic diagram RDS(ON)

 0.61. Size:450K  cn hmsemi
 hm4435.pdf 

HM4435 P-Channel Enhancement Mode Power MOSFET D DESCRIPTION The HM4435 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S Schematic diagram GENERAL FEATURES VDS = -30V,ID = -9.1A RDS(ON)

 0.62. Size:621K  cn hmsemi
 hm4402b.pdf 

HM4402B N-Channel Enhancement Mode Power MOSFET Description The HM4402B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID =21A Schematic diagram RDS(ON)

 0.63. Size:626K  cn hmsemi
 hm4402a.pdf 

H Description The uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =20V,ID = A RDS(ON)

 0.64. Size:530K  cn hmsemi
 hm4488.pdf 

N-Channel Enhancement Mode Power MOSFET Description The HM4488 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =150V,ID =5.2A RDS(ON)