Биполярный транзистор HMBTA94 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: HMBTA94
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.35 W
Макcимально допустимое напряжение коллектор-база (Ucb): 400 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 150 °C
Ёмкость коллекторного перехода (Cc): 4 pf
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: SOT-23
HMBTA94 Datasheet (PDF)
hmbta94.pdf
Spec. No. : HN200209HI-SINCERITYIssued Date : 2000.11.01Revised Date : 2004.08.17MICROELECTRONICS CORP.Page No. : 1/4HMBTA94PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBTA94 is designed for application that requires high voltage.SOT-23Features High Breakdown Voltage: VCEO=400(Min.) at IC=1mA Complementary to HMBTA44Absolute Maximum Ratings Maximum Temp
hmbta92.pdf
Spec. No. : HE6845HI-SINCERITYIssued Date : 1994.07.29Revised Date : 2004.09.07MICROELECTRONICS CORP.Page No. : 1/4HMBTA92PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBTA92 is designed for application as a video output to drive color CRT, or asa dialer circuit in electronics telephone.SOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature.......
hmbta14.pdf
Spec. No. : HE6841HI-SINCERITYIssued Date : 1994.07.29Revised Date : 2004.09.01MICROELECTRONICS CORP.Page No. : 1/4HMBTA14NPN EPITAXIAL PLANAR TRANSISTORDescriptionDarlington Amplifier TransistorSOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature.......................................................................................................
hmbta13.pdf
Spec. No. : HE6842HI-SINCERITYIssued Date : 1994.07.29Revised Date : 2004.09.08MICROELECTRONICS CORP.Page No. : 1/4HMBTA13NPN EPITAXIAL PLANAR TRANSISTORDescriptionDarlington Amplifier TransistorSOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature.......................................................................................................
hmbta44.pdf
Spec. No. : HN200208HI-SINCERITYIssued Date : 1993.06.23Revised Date : 2004.09.08MICROELECTRONICS CORP.Page No. : 1/4HMBTA44NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMBTA44 is designed for application requires high voltage.FeaturesSOT-23 High voltage: VCEO=400V(min) at IC=1mA High current: IC=300mA at 25C Complementary with HMBTA94Absolute Maximum R
hmbta42.pdf
Spec. No. : HE6848HI-SINCERITYIssued Date : 1994.07.29Revised Date : 2004.08.17MICROELECTRONICS CORP.Page No. : 1/4HMBTA42NPN EPITACIAL PLANAR TRANSISTORDescriptionHigh Voltage TransistorSOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature...............................................................................................................
hmbta06.pdf
Spec. No. : HE6840HI-SINCERITYIssued Date : 1994.07.29Revised Date : 2004.09.16MICROELECTRONICS CORP.Page No. : 1/4HMBTA06NPN SILICON TRANSISTORDescriptionAmplifier TransistorSOT-23Absolute Maximum Ratings Maximum TemperaturesStorage Temperature...........................................................................................................................
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
