Биполярный транзистор HMPSA06 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: HMPSA06
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.625 W
Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 80 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Статический коэффициент передачи тока (hfe): 50
Корпус транзистора: TO-92
HMPSA06 Datasheet (PDF)
hmpsa06.pdf
Spec. No. : HE6302HI-SINCERITYIssued Date : 1992.09.09Revised Date : 2005.02.05MICROELECTRONICS CORP.Page No. : 1/5HMPSA06NPN SILICON TRANSISTORDescriptionAmplifier transistorTO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ...........................................................................................................................
hmpsa42.pdf
Spec. No. : HE6333HI-SINCERITYIssued Date : 1992.11.18Revised Date : 2004.07.21MICROELECTRONICS CORP.Page No. : 1/4HMPSA42NPN EPITACIAL PLANAR TRANSISTORDescriptionThe HMPSA42 is high voltage transistor.FeaturesTO-92 High Collector-Emitter Breakdown Voltage Low Collector-Emitter Saturation Voltage For Complementary Use with PNP Type HMPSA92Absolute Maximum
hmpsa92.pdf
Spec. No. : HE6352HI-SINCERITYIssued Date : 1992.12.15Revised Date : 2004.07.21MICROELECTRONICS CORP.Page No. : 1/5HMPSA92PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMPSA92 is designed for application as a video output to drive color CRT, oras a dialer circuit in electronics telephone.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature .......
hmpsa44.pdf
Spec. No. : HE6358HI-SINCERITYIssued Date : 1993.01.15Revised Date : 2004.07.21MICROELECTRONICS CORP.Page No. : 1/4HMPSA44NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMPSA44 is designed for application that requires high voltage.FeaturesTO-92 High Breakdown Voltage: 400(Min) at IC=1mA High Current Gain: IC=300mA at 25C Complementary to HMPSA94Absolute
hmpsa94.pdf
Spec. No. : HE6355HI-SINCERITYIssued Date : 1993.01.15Revised Date : 2005.03.30MICROELECTRONICS CORP.Page No. : 1/5HMPSA94PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMPSA94 is designed for application that requires high voltage.FeaturesTO-92 High Breakdown Voltage: 400V(Min.) at IC=1mA High Current: IC=300mA at 25C Complementary to HMPSA44Absolute Max
hmpsa92m.pdf
Spec. No. : HE6354HI-SINCERITYIssued Date : 1993.01.15Revised Date : 2005.02.05MICROELECTRONICS CORP.Page No. : 1/4HMPSA92MPNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMPSA92M is designed for application as a video output to drive color CRT, oras a dialer circuit in electronics telephone.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature......
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050