Spec. No. : HE6355HI-SINCERITYIssued Date : 1993.01.15Revised Date : 2005.03.30MICROELECTRONICS CORP.Page No. : 1/5HMPSA94PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMPSA94 is designed for application that requires high voltage.FeaturesTO-92 High Breakdown Voltage: 400V(Min.) at IC=1mA High Current: IC=300mA at 25C Complementary to HMPSA44Absolute Max

Spec. No. : HE6352HI-SINCERITYIssued Date : 1992.12.15Revised Date : 2004.07.21MICROELECTRONICS CORP.Page No. : 1/5HMPSA92PNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMPSA92 is designed for application as a video output to drive color CRT, oras a dialer circuit in electronics telephone.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature .......

Spec. No. : HE6354HI-SINCERITYIssued Date : 1993.01.15Revised Date : 2005.02.05MICROELECTRONICS CORP.Page No. : 1/4HMPSA92MPNP EPITAXIAL PLANAR TRANSISTORDescriptionThe HMPSA92M is designed for application as a video output to drive color CRT, oras a dialer circuit in electronics telephone.TO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature......

Spec. No. : HE6333HI-SINCERITYIssued Date : 1992.11.18Revised Date : 2004.07.21MICROELECTRONICS CORP.Page No. : 1/4HMPSA42NPN EPITACIAL PLANAR TRANSISTORDescriptionThe HMPSA42 is high voltage transistor.FeaturesTO-92 High Collector-Emitter Breakdown Voltage Low Collector-Emitter Saturation Voltage For Complementary Use with PNP Type HMPSA92Absolute Maximum

Spec. No. : HE6358HI-SINCERITYIssued Date : 1993.01.15Revised Date : 2004.07.21MICROELECTRONICS CORP.Page No. : 1/4HMPSA44NPN EPITAXIAL PLANAR TRANSISTORDescriptionThe HMPSA44 is designed for application that requires high voltage.FeaturesTO-92 High Breakdown Voltage: 400(Min) at IC=1mA High Current Gain: IC=300mA at 25C Complementary to HMPSA94Absolute

Spec. No. : HE6302HI-SINCERITYIssued Date : 1992.09.09Revised Date : 2005.02.05MICROELECTRONICS CORP.Page No. : 1/5HMPSA06NPN SILICON TRANSISTORDescriptionAmplifier transistorTO-92Absolute Maximum Ratings Maximum TemperaturesStorage Temperature ...........................................................................................................................