Справочник транзисторов. CMBT3906

 

Биполярный транзистор CMBT3906 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: CMBT3906
   Маркировка: 2A
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.25 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.2 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 250 MHz
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: SOT-23

 Аналоги (замена) для CMBT3906

 

 

CMBT3906 Datasheet (PDF)

 ..1. Size:146K  cdil
 cmbt3906.pdf

CMBT3906 CMBT3906

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package CMBT3906SILICON EPITAXIAL TRANSISTORPNP transistorMarking PACKAGE OUTLINE DETAILSCMBT3906 = 2A ALL DIMENSIONS IN mmPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCB0 max. 40

 0.1. Size:352K  central
 cmbt3904e cmbt3906e.pdf

CMBT3906 CMBT3906

CMBT3904E NPNCMBT3906E PNPwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMBT3904E SILICON TRANSISTORS(NPN) and CMBT3906E (PNP) are general purpose transistors with enhanced specifications. These devices are ideal for applications where ultra small size and power dissipation are the prime requirements. Packaged

 0.2. Size:352K  central
 cmbt3906e.pdf

CMBT3906 CMBT3906

CMBT3904E NPNCMBT3906E PNPwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMBT3904E SILICON TRANSISTORS(NPN) and CMBT3906E (PNP) are general purpose transistors with enhanced specifications. These devices are ideal for applications where ultra small size and power dissipation are the prime requirements. Packaged

 7.1. Size:352K  central
 cmbt3904e.pdf

CMBT3906 CMBT3906

CMBT3904E NPNCMBT3906E PNPwww.centralsemi.comENHANCED SPECIFICATIONSURFACE MOUNTDESCRIPTION:COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CMBT3904E SILICON TRANSISTORS(NPN) and CMBT3906E (PNP) are general purpose transistors with enhanced specifications. These devices are ideal for applications where ultra small size and power dissipation are the prime requirements. Packaged

 7.2. Size:243K  cdil
 cmbt3903 04.pdf

CMBT3906 CMBT3906

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package CMBT3903CMBT3904SILICON EPITAXIAL TRANSISTORSNPN transistorsMarkingPACKAGE OUTLINE DETAILSCMBT3903 = 1Y ALL DIMENSIONS IN mmCMBT3904 = 1APin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (o

 7.3. Size:158K  cdil
 cmbt3905.pdf

CMBT3906 CMBT3906

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanySOT-23 Formed SMD Package CMBT3905SILICON EPITAXIAL TRANSISTORPNP transistorMarkingPACKAGE OUTLINE DETAILSCMBT3905 = 2YALL DIMENSIONS IN mmPin configuration1 = BASE2 = EMITTER3 = COLLECTOR312ABSOLUTE MAXIMUM RATINGSCollectorbase voltage (open emitter) VCBO max.

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