2N6107 - параметры, поиск аналогов, даташиты транзистора

Биполярный транзистор 2N6107 - описание производителя. Основные параметры. Даташиты.

   Наименование производителя: 2N6107
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 40 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 80 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 70 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 7 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 0.5 MHz
   Статический коэффициент передачи тока (hfe): 30
   Корпус транзистора: TO220

Аналоги (замена) для 2N6107

2N6107 Datasheet (PDF)

..1. Size:149K motorola
2n6107 2n6111 2n6288 2n6109 2n6292.pdf

Order this documentMOTOROLAby 2N6107/DSEMICONDUCTOR TECHNICAL DATA2N6057 thru 2N6059(See 2N6050)Complementary Silicon PlasticPNPPower Transistors 2N6107. . . designed for use in generalpurpose amplifier and switching applications.2N6109* DC Current Gain Specified to 7.0 AmpereshFE = 30150 @ IC = 3.0 Adc 2N6111, 2N6288hFE = 2.3 (Min) @ IC = 7.0 Adc All

..2. Size:48K st
2n6107 2n6111.pdf

2N61072N6111SILICON PNP SWITCHING TRANSISTORS STMicroelectronics PREFERREDSALESTYPE PNP TRANSISTORS APPLICATIONS: LINEAR AND SWITCHING INDUSTRIALEQUIPMENT 321DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNPTO-220silicon transistors in Jedec TO-220 plasticpackage. They are intended for a wide variety ofmedium power switching and linear applications

..3. Size:70K central
2n6107 2n6109 2n6111 2n6288 2n6290 2n6292.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

..4. Size:241K onsemi
2n6107 2n6109 2n6111 2n6288 2n6292.pdf

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

..5. Size:101K bocasemi
2n6106 2n6107 2n6108 2n6109 2n6110 2n6111 2n6288 2n6289 2n6290 2n6291 2n6292 2n6293 2n6473 2n6474 2n6475 2n6476.pdf

Boca Semiconductor Corp. BSC http://www.bocasemi.comhttp://www.bocasemi.com

..6. Size:95K cdil
2n6107 2n6292.pdf

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPLASTIC POWER TRANSISTORS 2N6107 PNP2N6292 NPNTO-220Plastic PackageGeneral Purpose Amplifier and Switching ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL VALUE UNITVCBOCollector Base Voltage 80 VCollector Emitter Voltage VCEO 70 VCollector Emitter Voltage (RBE= 100

..7. Size:198K inchange semiconductor
2n6107.pdf

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6107DESCRIPTIONDC Current Gain-: h = 30-150@ I = -2AFE CCollector-Emitter Sustaining Voltage-: V = -70V(Min)CEO(SUS)Complement to Type 2N6292Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicati

..8. Size:121K inchange semiconductor
2n6107 2n6109 2n6111.pdf

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6107 2N6109 2N6111 DESCRIPTION With TO-220 package Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 B

0.1. Size:241K onsemi
2n6107g 2n6109g 2n6111g 2n6288g 2n6292g.pdf