Справочник транзисторов. 2N611

 

Биполярный транзистор 2N611 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N611
   Тип материала: Ge
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.18 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 25 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 15 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 10 V
   Макcимальный постоянный ток коллектора (Ic): 0.2 A
   Предельная температура PN-перехода (Tj): 100 °C
   Граничная частота коэффициента передачи тока (ft): 1 MHz
   Ёмкость коллекторного перехода (Cc): 25 pf
   Статический коэффициент передачи тока (hfe): 45
   Корпус транзистора: TO5

 Аналоги (замена) для 2N611

 

 

2N611 Datasheet (PDF)

 0.1. Size:209K  1
2n6112.pdf

2N611

 0.2. Size:58K  1
2n6116 2n6117 2n6118.pdf

2N611
2N611

 0.3. Size:149K  motorola
2n6107 2n6111 2n6288 2n6109 2n6292.pdf

2N611
2N611

Order this documentMOTOROLAby 2N6107/DSEMICONDUCTOR TECHNICAL DATA2N6057 thru 2N6059(See 2N6050)Complementary Silicon PlasticPNPPower Transistors 2N6107. . . designed for use in generalpurpose amplifier and switching applications.2N6109* DC Current Gain Specified to 7.0 AmpereshFE = 30150 @ IC = 3.0 Adc 2N6111, 2N6288hFE = 2.3 (Min) @ IC = 7.0 Adc All

 0.4. Size:48K  st
2n6107 2n6111.pdf

2N611
2N611

2N61072N6111SILICON PNP SWITCHING TRANSISTORS STMicroelectronics PREFERREDSALESTYPE PNP TRANSISTORS APPLICATIONS: LINEAR AND SWITCHING INDUSTRIALEQUIPMENT 321DESCRIPTION The 2N6107 and 2N6111 are epitaxial-base PNPTO-220silicon transistors in Jedec TO-220 plasticpackage. They are intended for a wide variety ofmedium power switching and linear applications

 0.5. Size:56K  st
2n6111.pdf

2N611
2N611

2N6111SILICON PNP SWITCHING TRANSISTOR STMicroelectronics PREFERREDSALESTYPE PNP TRANSISTORAPPLICATIONS: LINEAR AND SWITCHING INDUSTRIALEQUIPMENT DESCRIPTION 32The 2N6111 is an Epitaxial-Base PNP silicon1transistor in Jedec TO-220 plastic package. It isintended for a wide variety of medium powerTO-220switching and linear applications.INTERNAL SCHEMATIC DIA

 0.6. Size:70K  central
2n6107 2n6109 2n6111 2n6288 2n6290 2n6292.pdf

2N611

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 0.7. Size:241K  onsemi
2n6107g 2n6109g 2n6111g 2n6288g 2n6292g.pdf

2N611
2N611

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

 0.8. Size:241K  onsemi
2n6107 2n6109 2n6111 2n6288 2n6292.pdf

2N611
2N611

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

 0.9. Size:102K  onsemi
2n6111g 2n6111g 2n6292g.pdf

2N611
2N611

2N6107, 2N6109, 2N6111 (PNP),2N6288, 2N6292 (NPN)Complementary SiliconPlastic Power TransistorsThese devices are designed for use in general-purpose amplifier andswitching applications.www.onsemi.comFeatures7 AMPERE High DC Current Gain High Current Gain - Bandwidth ProductPOWER TRANSISTORS TO-220 Compact PackageCOMPLEMENTARY SILICON These Devices are Pb-

 0.10. Size:101K  bocasemi
2n6106 2n6107 2n6108 2n6109 2n6110 2n6111 2n6288 2n6289 2n6290 2n6291 2n6292 2n6293 2n6473 2n6474 2n6475 2n6476.pdf

2N611
2N611

Boca Semiconductor Corp. BSC http://www.bocasemi.comhttp://www.bocasemi.com

 0.11. Size:188K  cdil
2n6111.pdf

2N611
2N611

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package 2N61112N6111 PNP PLASTIC POWER TRANSISTORGeneral Purpose Amplifier and Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDIM MIN. MAX.EBFA 14.42 16.51B 9.63 10.67C 3.56 4.83D0.90E 1.15 1.401 2 3F 3.75

 0.12. Size:197K  inchange semiconductor
2n6110.pdf

2N611
2N611

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6110DESCRIPTIONDC Current Gain-: h = 30-150@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -30V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier and switchingcircuits applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSY

 0.13. Size:121K  inchange semiconductor
2n6106 2n6108 2n6110.pdf

2N611
2N611

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6106 2N6108 2N6110 DESCRIPTION With TO-220 package With short pin APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 BaseAbsolute maximum ratings(Ta=2

 0.14. Size:196K  inchange semiconductor
2n6111.pdf

2N611
2N611

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6111DESCRIPTIONDC Current Gain-: h = 30-150@ I = -3AFE CCollector-Emitter Sustaining Voltage-: V = -30V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applicationsABSOLUTE MAXIMUM RATINGS

 0.15. Size:121K  inchange semiconductor
2n6107 2n6109 2n6111.pdf

2N611
2N611

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6107 2N6109 2N6111 DESCRIPTION With TO-220 package Complement to NPN type: 2N6288; 2N6290 ;2N6292 APPLICATIONS Power amplifier and switching circuits applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol3 B

Другие транзисторы... 2N6102 , 2N6103 , 2N6104 , 2N6105 , 2N6106 , 2N6107 , 2N6108 , 2N6109 , D882 , 2N6110 , 2N6111 , 2N6112 , 2N6116 , 2N612 , 2N6121 , 2N6122 , 2N6123 .

 

 
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