Биполярный транзистор 2N6129 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N6129
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 7 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 2 MHz
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: TO220
2N6129 Datasheet (PDF)
2n6129 2n6130 2n6131.pdf
Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum r
2n6129 2n6130 2n6131.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute
2n6129.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6129DESCRIPTIONDC Current Gain-: h = 20-100@ I = 2.5AFE CCollector-Emitter Sustaining Voltage-: V = 40V(Min)CEO(SUS)Complement to Type 2N6132Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switching circuitsapplicatio
2n6121 2n6122 2n6123 2n6124 2n6125 2n6126.pdf
TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com
2n6121-26.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyTO-220 Plastic Package 2N6121, 2N6122, 2N61232N6124, 2N6125, 2N61262N6121, 6122, 6123 NPN PLASTIC POWER TRANSISTORS2N6124, 6125, 6126 PNP PLASTIC POWER TRANSISTORSMedium Power Linear and Switching ApplicationsPIN CONFIGURATION41. BASE2. COLLECTOR3. EMITTER4. COLLECTOR123CDI
2n6124.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6124DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -0.6V(Max.)@ I = -1.5ACE(sat) CCollector-Emitter Sustaining Voltage-: V = -45V(Min)CEO(SUS)Complement to Type 2N6121Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier a
2n6122.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6122DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 0.6V(Max.)@ I = 1.5ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement to Type 2N6125Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and
2n6121.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6121DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 0.6V(Max.)@ I = 1.5ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 45V(Min)CEO(SUS)Complement to Type 2N6124Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and
2n6126.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6126DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -0.6V(Max.)@ I = -1.5ACE(sat) CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Complement to Type 2N6123Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier a
2n6124 2n6125 2n6126.pdf
Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6124 2N6125 2N6126 DESCRIPTION With TO-220 package Complement to PNP type : 2N6121 ;2N6122 ;2N6123 APPLICATIONS For use in power amplifier and switching circuit applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and
2n6121 2n6122 2n6123.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6121 2N6122 2N6123 DESCRIPTION With TO-220 package Complement to PNP type : 2N6124 ;2N6125 ;2N6126 APPLICATIONS For use in power amplifier and switching circuit applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=
2n6123.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6123DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 0.6V(Max.)@ I = 1.5ACE(sat) CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type 2N6126Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and
2n6125.pdf
INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6125DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -0.6V(Max.)@ I = -1.5ACE(sat) CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type 2N6122Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier a
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050