Справочник транзисторов. 2N6133

 

Биполярный транзистор 2N6133 - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N6133
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 50 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 60 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 7 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 2 MHz
   Статический коэффициент передачи тока (hfe): 20
   Корпус транзистора: TO220

 Аналоги (замена) для 2N6133

 

 

2N6133 Datasheet (PDF)

 ..1. Size:104K  jmnic
2n6132 2n6133 2n6134.pdf

2N6133
2N6133

Product Specification www.jmnic.com Silicon PNP Power Transistors 2N6132 2N6133 2N6134 DESCRIPTION With TO-220 package High power dissipation Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ra

 ..2. Size:119K  inchange semiconductor
2n6132 2n6133 2n6134.pdf

2N6133
2N6133

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2N6132 2N6133 2N6134 DESCRIPTION With TO-220 package High power dissipation Complement to NPN type : 2N6129 2N6130 2N6131 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified o

 ..3. Size:195K  inchange semiconductor
2n6133.pdf

2N6133
2N6133

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6133DESCRIPTIONDC Current Gain-: h = 20-100@ I = -2.5AFE CCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)Complement to Type 2N6130Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applica

 9.1. Size:104K  jmnic
2n6129 2n6130 2n6131.pdf

2N6133
2N6133

Product Specification www.jmnic.com Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum r

 9.2. Size:137K  unitrode
2n6137.pdf

2N6133
2N6133

 9.3. Size:194K  inchange semiconductor
2n6130.pdf

2N6133
2N6133

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6130DESCRIPTIONDC Current Gain-: h = 20-100@ I = 2.5AFE CCollector-Emitter Sustaining Voltage-: V = 60V(Min)CEO(SUS)Complement to Type 2N6133Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switching circuitsapplicatio

 9.4. Size:194K  inchange semiconductor
2n6131.pdf

2N6133
2N6133

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N6131DESCRIPTIONDC Current Gain-: h = 20-100@ I = 2.5AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Complement to Type 2N6134Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in power amplifier and switching circuitsapplicatio

 9.5. Size:120K  inchange semiconductor
2n6129 2n6130 2n6131.pdf

2N6133
2N6133

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6129 2N6130 2N6131 DESCRIPTION With TO-220 package High power dissipation Complement to PNP type : 2N6132 2N6133 2N6134 APPLICATIONS Power amplifier and medium speed switching applications PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter Absolute

 9.6. Size:195K  inchange semiconductor
2n6132.pdf

2N6133
2N6133

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6132DESCRIPTIONDC Current Gain-: h = 20-100@ I = -2.5AFE CCollector-Emitter Sustaining Voltage-: V = -40V(Min)CEO(SUS)Complement to Type 2N6129Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applica

 9.7. Size:196K  inchange semiconductor
2n6134.pdf

2N6133
2N6133

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2N6134DESCRIPTIONDC Current Gain-: h = 20-100@ I = -2.5AFE CCollector-Emitter Sustaining Voltage-: V = -80V(Min)CEO(SUS)Complement to Type 2N6131Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general-purpose amplifier andswitching applica

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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