Биполярный транзистор 2N6198 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2N6198
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 25 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 35 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 2.5 A
Предельная температура PN-перехода (Tj): 175 °C
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: X28-1
2N6198 Datasheet (PDF)
2n6190 2n6191 2n6192 2n6193.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n6193lcc4.pdf
2N6193LCC4MECHANICAL DATADimensions in mm (inches)PNP SILICONTRANSISTORS9.14 (0.360)1.27 (0.050) 8.64 (0.340)1.07 (0.040) 2.16 (0.085)12 13 14 15 161.39 (0.055)1.02 (0.040)11 1710 187.62 (0.300)7.12 (0.280)9 10.76 (0.030)FEATURES8 20.51 (0.020) Hermetically sealed ceramic surface0.33 (0.013)Rad.0.08 (0.003)7 6 5 4 3mount package0.43 (0
2n6193alcc4.pdf
2N6193ALCC4MECHANICAL DATADimensions in mm (inches)PNP SILICONTRANSISTORS9.14 (0.360)1.27 (0.050) 8.64 (0.340)1.07 (0.040) 2.16 (0.085)12 13 14 15 161.39 (0.055)1.02 (0.040)11 1710 187.62 (0.300)7.12 (0.280)9 10.76 (0.030)FEATURES8 20.51 (0.020) Hermetically sealed ceramic surface0.33 (0.013)Rad.0.08 (0.003)7 6 5 4 3mount package0.43 (
2n6199.pdf
2N6199 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .380" 4L STUD The ASI 2N6199 is Designed for VHF .112x45 A Class C Power Amplifier Applications Cup to 250 MHz. BE EFEATURES:C B PG = 10 dB Typical at 25 W/175 MHz I Load VSWR at Rated Conditions DHJ Omnigold Metallization System G#8-32 UNC-2AF E MA
2n6193.pdf
Data Sheet No. 2C6193Generic Packaged Parts:Chip Type 2C6193Geometry 97002N6190, 2N6191, 2N6192,Polarity PNP2N6193Chip type 2C6193 by Semicoa Semi- Product Summary:conductors provides performanceAPPLICATIONS:similar to these devices.Designed for medium power switching andwide band applications.Part Numbers:2N6190, 2N6191, 2N6192, 2N6193Features: Medium power rating
2n6193u3.pdf
NPN Power Silicon Transistors2N6193U3Features JANS and JANSR Qualified to MIL-PRF-19500/561 JEDEC resistered 2N6193 Lightweight & Low Power Ideal for Space, Military and Other High Reliability Applications Surface mount U3 (TO-276AA) PackageMaximum RatingsRatings Symbol Value UnitsCollector - Emitter Voltage VCEO 100 VdcCollector - Base Voltage VCBO 100 Vdc
2n6193.pdf
PNP Power Silicon Transistor2N6193Features Available in JAN, JANTX, JANTXV and JANS per MIL-PRF-19500/561 TO-39 (TO-205AD) PackageMaximum RatingsRatings Symbol Value UnitsCollector - Emitter Voltage VCEO 100 VdcCollector - Base Voltage VCBO 100 VdcEmitter - Base Voltage VEBO 6.0 VdcCollector Current IC 5.0 AdcBase Current IB 1.0 AdcTotal Power Dissipation @ TA =
Другие транзисторы... 2N6191 , 2N6192 , 2N6193 , 2N6193A , 2N6194 , 2N6195 , 2N6196 , 2N6197 , TIP2955 , 2N6199 , 2N61A , 2N61B , 2N61C , 2N62 , 2N620 , 2N6200 , 2N6201 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050