TIP3055F - описание и поиск аналогов

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company POWER TRANSISTORS TIP2955F PNP TIP3055F NPN TO- 3P Fully Isolated Plastic Package B C E Designed for General Purpose Switching and Amplifier Applications ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector-Emitter Voltage VCEO 60 V Collector-Emitter Voltage VCER 70 V Collector-

TIP2955 TIP3055 Complementary power transistors Features Low collector-emitter saturation voltage Complementary NPN - PNP transistors Applications General purpose Audio Amplifier 3 2 1 Description TO-247 The devices are manufactured in epitaxial-base planar technology and are suitable for audio, power linear and switching applications. Figure 1. Internal sche

TIP3055 (NPN), TIP2955 (PNP) Complementary Silicon Power Transistors Designed for general-purpose switching and amplifier applications. http //onsemi.com Features DC Current Gain - 15 AMPERE hFE = 20 - 70 @ IC POWER TRANSISTORS = 4.0 Adc COMPLEMENTARY SILICON Collector-Emitter Saturation Voltage - 60 VOLTS, 90 WATTS VCE(sat) = 1.1 Vdc (Max) @ IC = 4.0 Adc Excell

TIP3055 NPN SILICON POWER TRANSISTOR Designed for Complementary Use with the SOT-93 PACKAGE TIP2955 Series (TOP VIEW) 90 W at 25 C Case Temperature B 1 15 A Continuous Collector Current C 2 Customer-Specified Selections Available 3 E Pin 2 is in electrical contact with the mounting base. MDTRAAA absolute maximum ratings at 25 C case temperature (unless otherwis

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TIP3055 Silicon NPN Power Transistors DESCRIPTION With TO-247 package Complement to type TIP2955 90 W at 25 C case temperature 15 A continuous collector current APPLICATIONS Designed for general purpose switching and amplifier applications. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-247) and symbol

INCHANGE Semiconductor isc Silicon NPN Power Transistor TIP3055 DESCRIPTION Excellent Safe Operating Area DC Current Gain- h =20-70@I = 4A FE C Collector-Emitter Saturation Voltage- V )= 1.1 V(Max)@ I = 4A CE(sat C Complement to Type TIP2955 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose

isc Silicon NPN Power Transistor TIP3055T DESCRIPTION Excellent Safe Operating Area DC Current Gain- h =20-70@I = 4A FE C Collector-Emitter Saturation Voltage- V )= 0.8V(Max)@ I = 4A CE(sat C Complement to Type TIP2955T Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose switching and amplifier